FDP4D5N10C

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

128 A

Rds On - Drain-Source Resistance:

4.5 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

68 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

150 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Brand:

ON Semiconductor

Forward Transconductance - Min:

134 S

Fall Time:

13 ns

Product Type:

MOSFET

Rise Time:

49 ns

Factory Pack Quantity:

800

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

41 ns

Typical Turn-On Delay Time:

29 ns

Tags

FDP4, FDP