IRF8252PBF

Mfr. #:: IRF8252PBF
Manufacturer:: Infineon / IR
Description:: MOSFET 25V 1 N-CH HEXFET 2.7mOhms 35nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRF8252PBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF8252PBF Datasheet IRF8252PBF Datasheet (P4-P6)IRF8252PBF Datasheet (P7-P9)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SO-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 25 V

Id - Continuous Drain Current:: 25 A

Rds On - Drain-Source Resistance:: 3.7 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.35 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 35 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 2.5 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Tube

Height:: 1.75 mm

Length:: 4.9 mm

Transistor Type:: 1 N-Channel

Type:: HEXFET Power MOSFET

Width:: 3.9 mm

Brand:: Infineon / IR

Forward Transconductance - Min:: 89 S

Fall Time:: 12 ns

Product Type:: MOSFET

Rise Time:: 32 ns

Factory Pack Quantity:: 95

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 19 ns

Typical Turn-On Delay Time:: 23 ns

Part # Aliases:: SP001554466

Unit Weight:: 0.019048 oz

Tags: IRF825, IRF82, IRF8, IRF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF8252PBF Description

***ical: Trans MOSFET N-CH 25V 25A 8-Pin SOIC Tube

***ineon SCT: 25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC converters, SO8, RoHS

***ment14 APAC: MOSFET, N-CH, 25V, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:25V; On Resistance Rds(on):2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:25A; Package / Case:SOIC-8; Power Dissipation Pd:2.5W; Pulse Current Idm:200A; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V; Voltage Vgs th Min:1.35V

***ark: Mosfet Transistor, N Channel, 24 A, 30 V, 0.0023 Ohm, 10 V, 1.8 V Rohs Compliant: Yes

***(Formerly Allied Electronics): IRF8788PBF N-channel MOSFET Transistor,24 A, 30 V, 8-Pin SOIC

***ure Electronics: Single N-Channel 30 V 2.8 mOhm 66 nC HEXFET® Power Mosfet - SOIC-8

***p One Stop: Trans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R

***nell: MOSFET, N-CH, 30V, SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0023ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissi

***ure Electronics: N-Channel 30 V 4.5 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET 30V, 18.5A, 4.5mΩ

***Yang: Trans MOSFET N-CH 30V 18.5A 8-Pin SOIC N T/R - Tape and Reel

***rchild Semiconductor: This N–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

***ment14 APAC: MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.5mohm; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5mW; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5mW; Pulse Current Idm:74A; Termination Type:SMD; Transistor Type:Trench; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V

***ure Electronics: Single N-Channel 30 V 4.8 mOhm 51 nC HEXFET® Power Mosfet - SOIC-8

***roFlash: Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

***nell: MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.32V; Power Dissi

***roFlash: IRF8736PBF N-channel MOSFET Transistor, 18 A, 30 V, 8-Pin SOIC

***ure Electronics: Single N-Channel 30 V 6.8 mOhm 26 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH 30V 18A 8-Pin SOIC Tube / MOSFET N-CH 30V 18A 8-SOIC

***(Formerly Allied Electronics): MOSFET; N Ch.; 30V; 18A; 4.8 MOHM; 17 NC QG; SO-8; Pb-Free

***ure Electronics: Si4156DY Series N-Channel 30 V 0.006 Ohm 6 W Surface Mount Power Mosfet - SOIC-8

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:24A; On Resistance Rds(On):0.0048Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:2.2V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes

***ment14 APAC: MOSFET,N CH,30V,24A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:15.7A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V

***Yang: Trans MOSFET P-CH 30V 20A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled

***ure Electronics: P-Channel 30 V 4.6 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***emi: P-Channel PowerTrench® MOSFET, 30V, -20A, 4.6mΩ

*** Electronics: ON SEMICONDUCTOR - FDS6681Z - MOSFET Transistor, P Channel, -20 A, -30 V, 0.0038 ohm, -10 V, -1.8 V

***et Europe: Trans MOSFET P-CH 30V 20A 8-Pin SOIC N T/R

***rchild Semiconductor: This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Market price

Part #	Mfg.	Description	Stock	Price
IRF8252PBF DISTI # IRF8252PBF-ND	Infineon Technologies AG	MOSFET N-CH 25V 25A 8-SO RoHS: Compliant Min Qty: 3800 Container: Tube	Limited Supply - Call
IRF8252PBF DISTI # IRF8252PBF	Infineon Technologies AG	Trans MOSFET N-CH 25V 25A 8-Pin SOIC - Rail/Tube (Alt: IRF8252PBF) RoHS: Compliant Min Qty: 3800 Container: Tube	Americas - 3930
IRF8252PBF	International Rectifier	Power Field-Effect Transistor, 25A I(D), 25V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET RoHS: Compliant	1458	1000:$0.6200 500:$0.6500 100:$0.6800 25:$0.7100 1:$0.7600
IRF8252PBF DISTI # 942-IRF8252PBF	Infineon Technologies AG	MOSFET 25V 1 N-CH HEXFET 2.7mOhms 35nC RoHS: Compliant	0
IRF8252PBF	International Rectifier	25 A, 25 V, 0.0027 OHM, N-CHANNEL, SI, POWER, MOSFET	40	18:$0.6000 5:$0.9000 1:$1.2000
IRF8252PBF	International Rectifier		3325
IRF8252PBF DISTI # 1688581	Infineon Technologies AG	MOSFET, N-CH, 25V, SO8 RoHS: Compliant	0	1:$2.3600 10:$1.9400 100:$1.5700 500:$1.4000 1000:$1.2400

Image	Part #	Description
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	Mfr.#: IRF820NS OMO.#: OMO-IRF820NS-1190	New and Original
	Mfr.#: IRF820STRR OMO.#: OMO-IRF820STRR-VISHAY	MOSFET N-CH 500V 2.5A D2PAK
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	Mfr.#: IRF821TRPBF OMO.#: OMO-IRF821TRPBF-1190	New and Original
	Mfr.#: IRF823 H2 OMO.#: OMO-IRF823-H2-1190	New and Original

IRF8252PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes