IRF8

IRF8010STRLPBF vs IRF8113PBF vs IRF8010SPBF

 
PartNumberIRF8010STRLPBFIRF8113PBFIRF8010SPBF
DescriptionMOSFET MOSFT 100V 80A 15mOhm 81nCMOSFET 30V 1 N-CH HEXFET 6mOhms 24nCMOSFET 100V N-CH HEXFET 15mOhms 81nC
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3SO-8TO-252-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V30 V100 V
Id Continuous Drain Current80 A16.6 A80 A
Rds On Drain Source Resistance15 mOhms7.4 mOhms15 mOhms
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge81 nC24 nC81 nC
Pd Power Dissipation260 W2.5 W260 W
ConfigurationSingleSingleSingle
PackagingReelTubeTube
Height2.3 mm1.75 mm2.3 mm
Length6.5 mm4.9 mm6.5 mm
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width6.22 mm3.9 mm6.22 mm
BrandInfineon / IRInfineon / IRInfineon / IR
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity800951000
SubcategoryMOSFETsMOSFETsMOSFETs
Part # AliasesSP001565774SP001572234SP001575454
Unit Weight0.139332 oz0.019048 oz0.139332 oz
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 150 C+ 175 C
Channel Mode-EnhancementEnhancement
Type-HEXFET Power MOSFETSmps MOSFET
Fall Time-3.5 ns120 ns
Rise Time-8.9 ns130 ns
Typical Turn Off Delay Time-17 ns61 ns
Typical Turn On Delay Time-13 ns15 ns
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRF8010STRLPBF MOSFET MOSFT 100V 80A 15mOhm 81nC
IRF8113TRPBF MOSFET MOSFT 30V 16.6A 6mOhm 24nC
IRF8113PBF MOSFET 30V 1 N-CH HEXFET 6mOhms 24nC
IRF8010SPBF MOSFET 100V N-CH HEXFET 15mOhms 81nC
Vishay / Siliconix
Vishay / Siliconix
IRF820ALPBF MOSFET N-CH 500V HEXFET MOSFET TO-26
IRF820ASPBF MOSFET N-Chan 500V 2.5 Amp
IRF820APBF MOSFET N-CH 500V HEXFET MOSFET
IRF820A MOSFET RECOMMENDED ALT 844-IRF820APBF
Infineon Technologies
Infineon Technologies
IRF8010PBF MOSFET MOSFT 100V 80A 15mOhm 81nC
IRF8010PBF MOSFET N-CH 100V 80A TO-220AB
IRF8010STRRPBF MOSFET N-CH 100V 80A D2PAK
IRF8113 MOSFET N-CH 30V 17.2A 8-SOIC
IRF8113GPBF MOSFET N-CH 30V 17.2A 8-SO
IRF8113TR MOSFET N-CH 30V 17.2A 8-SOIC
IRF8113TRPBF MOSFET N-CH 30V 17.2A 8-SOIC
IRF8010STRLPBF MOSFET N-CH 100V 80A D2PAK
IRF8010SPBF Darlington Transistors MOSFET 100V N-CH HEXFET 15mOhms 81nC
IRF8113GTRPBF MOSFET N-CH 30V 17.2A 8-SOIC
IRF8113PBF IGBT Transistors MOSFET 30V 1 N-CH HEXFET 6mOhms 24nC
Vishay
Vishay
IRF820ALPBF MOSFET N-CH 500V 2.5A TO-262
IRF820AL MOSFET N-CH 500V 2.5A TO-262
IRF820AS MOSFET N-CH 500V 2.5A D2PAK
IRF820APBF Darlington Transistors MOSFET N-Chan 500V 2.5 Amp
IRF820ASPBF Darlington Transistors MOSFET N-Chan 500V 2.5 Amp
IRF820A MOSFET N-Chan 500V 2.5 Amp
IRF8113TRPBF. TRENCH_MOSFETS , ROHS COMPLIANT: YES
IRF820. Power Field-Effect Transistor, 2.5A I(D), 500V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IRF8010STRLPBF-CUT TAPE New and Original
IRF8113TRPBF-CUT TAPE New and Original
IRF8010 MOSFET Transistor, N-Channel, TO-220AB
IRF8010,IRF820PBF,IRF801 New and Original
IRF8010L New and Original
IRF8010S New and Original
IRF8010STRLPBF. Transistor Polarity:N Channel, Continuous Drain Current Id:80A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.012ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissi
IRF8010STRPBF New and Original
IRF803 New and Original
IRF80701 New and Original
IRF807D1 New and Original
IRF807D1TRPBF New and Original
IRF807D2 New and Original
IRF807VD1 New and Original
IRF807VD1TRPBF New and Original
IRF810 New and Original
IRF8113PBF-1 New and Original
IRF8113TRPBF-1 New and Original
IRF8113UTRPBF New and Original
IRF814PBF New and Original
IRF820 SEC New and Original
IRF820A/ SIHF820A New and Original
STMicroelectronics
STMicroelectronics
IRF820 MOSFET N-CH 500V 2.5A TO-220AB
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