IRF8010PBF

Mfr. #:: IRF8010PBF
Manufacturer:: Infineon Technologies
Description:: MOSFET MOSFT 100V 80A 15mOhm 81nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRF8010PBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRF8010PBF Datasheet IRF8010PBF Datasheet (P4-P6)IRF8010PBF Datasheet (P7-P9)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 80 A

Rds On - Drain-Source Resistance:: 15 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 81 nC

Pd - Power Dissipation:: 260 W

Configuration:: Single

Packaging:: Tube

Height:: 15.65 mm

Length:: 10 mm

Transistor Type:: 1 N-Channel

Width:: 4.4 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Part # Aliases:: SP001575444

Unit Weight:: 0.211644 oz

Tags: IRF801, IRF80, IRF8, IRF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF8010PBF Description

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 12Milliohms;ID 80A;TO-220AB;PD 260W;-55deg

***eco: Transistor MOSFET N Channel 100 Volt 80a 3-Pin 3+ Tab TO-220AB

***ure Electronics: Single N-Channel 100 V 15 mOhm 81 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 260 W

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 100V, 80A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:260W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Junction to Case Thermal Resistance A:0.57°C/W; On State resistance @ Vgs = 10V:15ohm; Package / Case:TO-220AB; Power Dissipation Pd:260W; Power Dissipation Pd:260W; Pulse Current Idm:320A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 11Milliohms;ID 73A;TO-220AB;PD 190W;-55deg

***ure Electronics: Single N-Channel 100 V 14 mOhm 90 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop Global: Trans MOSFET N-CH 100V 73A 3-Pin(3+Tab) TO-220AB Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 190 W

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 2200pF U2J +/-5% 1000volts

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC; Consumer Full-Bridge; Full-Bridge; Push-Pull

***nell: MOSFET, N, 100V, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:73A; Resistance, Rds On:11mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220 (SOT-78B); Termination Type:Through Hole; Alternate Case Style:SOT-78B; Avalanche Single Pulse Energy Eas:370mJ; Current, Idm Pulse:290A; Lead Spacing:2.54mm; No. of Pins:3; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation:190W; Power, Pd:190W; Power, Ptot:190W; Resistance, Rds on @ Vgs = 10V:0.014ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, trr Typ:35ns; Transistors, No. of:1; Typ Capacitance Ciss:3550pF; Voltage, Vds Max:100V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 13 Milliohms;ID 82A;TO-220AB;PD 230W;gFS 38S

***ure Electronics: Single N-Channel 75 V 13 mOhm 160 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 80V 82A 3-Pin(3+Tab) TO-220AB - Rail/Tube

*** Stop Electro: Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:82A; On Resistance, Rds(on):13mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 82 / Drain-Source Voltage (Vds) V = 75 / ON Resistance (Rds(on)) mOhm = 13 / Gate-Source Voltage V = 20 / Fall Time ns = 48 / Rise Time ns = 64 / Turn-OFF Delay Time ns = 49 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 230

***ment14 APAC: MOSFET, N, 75V, 82A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:75V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:82A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:13mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:280A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): IRFB4410ZPBF N-channel MOSFET Transistor, 97 A, 100 V, 3-Pin TO-220AB

*** Source Electronics: MOSFET N-CH 100V 97A TO-220AB / Trans MOSFET N-CH Si 100V 97A 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: Single N-Channel 100 V 9 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 230 W

***roFlash: Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull

***ment14 APAC: MOSFET, N, 100V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:97A; Drain Source Voltage Vds:100V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4410; Current Id Max:96A; N-channel Gate Charge:83nC; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230mW; Pulse Current Idm:390A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

***emi: N-Channel UltraFET Power MOSFET 80V, 75A, 14mΩ

***Yang: Trans MOSFET N-CH 80V 75A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 75A I(D), 80V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N CH, 80V, 75A, TO220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 230W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Id Max: 75A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Through Hole; Voltage Vds Typ: 80V; Voltage Vgs Max: 4V; Voltage Vgs Rds on Measurement: 10V

***p One Stop: Trans MOSFET N-CH 100V 9A Automotive 3-Pin(3+Tab) TO-220AB Tube

***emi: N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ

***ure Electronics: N-Channel 100 V 16 mO PowerTrench Mosfet - TO-220AB

***enic: 100V 61A 150W 16m´Î@10V61A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***r Electronics: Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:61A; On Resistance Rds(On):0.014Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:182mJ; Capacitance Ciss Typ:2880pF; Current Id Max:61A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:14mohm; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Power Dissipation Ptot Max:150W; Pulse Current Idm:70A; Reverse Recovery Time trr Typ:62ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

***emi: N-Channel Power MOSFET, UniFETTM, 75 V, 75 A, 11 mΩ, TO-220

***Yang: Trans MOSFET N-CH 75V 75A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***ure Electronics: N-Channel 75 V 11 mOhm Flange Mount Mosfet - TO-220

*** Stop Electro: Power Field-Effect Transistor, 75A I(D), 75V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):0.011ohm; Rds(on) Test Voltage, Vgs:4V; Threshold Voltage, Vgs Typ:20V ;RoHS Compliant: Yes

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:75V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:137W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Capacitance Ciss Typ:3437pF; Current Id Max:75A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:0.91°C/W; On State Resistance Max:11mohm; On State Resistance Typ:9.4mohm; Package / Case:TO-220; Pin Configuration:G(1),D(2)S(3); Power Dissipation Pd:137W; Power Dissipation Pd:137W; Pulse Current Idm:300A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

Market price

Part #	Mfg.	Description	Stock	Price
IRF8010PBF DISTI # V99:2348_13891227	Infineon Technologies AG	Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB Tube	846	5000:$0.6641 2500:$0.6647 1000:$0.6959 500:$0.9264 100:$1.0606 10:$1.3224 1:$1.4365
IRF8010PBF DISTI # IRF8010PBF-ND	Infineon Technologies AG	MOSFET N-CH 100V 80A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube	460In Stock	1000:$1.0747 500:$1.2971 100:$1.6677 50:$1.8530 1:$2.3000
IRF8010PBF DISTI # 29731040	Infineon Technologies AG	Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB Tube	7050	500:$0.8160 100:$0.9408 17:$1.0368
IRF8010PBF DISTI # 30182374	Infineon Technologies AG	Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB Tube	846	500:$0.9257 100:$1.0596 10:$1.3186 9:$1.4349
IRF8010PBF DISTI # IRF8010PBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB (Alt: IRF8010PBF) RoHS: Compliant Min Qty: 1000	Asia - 4000	1000:$0.7714 2000:$0.7500 3000:$0.7297 5000:$0.7105 10000:$0.7013 25000:$0.6923 50000:$0.6835
IRF8010PBF DISTI # IRF8010PBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF8010PBF) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 0	1:$1.1139 10:$1.0429 25:$1.0409 50:$1.0379 100:$0.8999 500:$0.7749 1000:$0.6819
IRF8010PBF DISTI # 38K2853	Infineon Technologies AG	MOSFET Transistor, N Channel, 80 A, 100 V, 15 mohm, 10 V, 4 V RoHS Compliant: Yes	815	1:$1.9900 10:$1.6900 100:$1.3500 500:$1.1800 1000:$0.9770 2500:$0.9100 5000:$0.8760
IRF8010PBF DISTI # 70017008	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 12 Milliohms,ID 80A,TO-220AB,PD 260W,-55deg RoHS: Compliant	872	1:$3.3800 10:$2.9800 100:$2.6000 500:$2.2500 1000:$1.9900
IRF8010PBF	International Rectifier	RoHS: Not Compliant	500	1000:$0.6600 500:$0.6900 100:$0.7200 25:$0.7500 1:$0.8100
IRF8010PBF DISTI # 942-IRF8010PBF	Infineon Technologies AG	MOSFET MOSFT 100V 80A 15mOhm 81nC RoHS: Compliant	1054	1:$1.9900 10:$1.6900 100:$1.3500 500:$1.1800 1000:$0.9770 2500:$0.9100 5000:$0.8760
IRF8010PBF	Infineon Technologies AG	Single N-Channel 100 V 15 mOhm 81 nC HEXFET Power Mosfet - TO-220-3 RoHS: Compliant	31163Tube	10:$1.0800 100:$0.9800 500:$0.8500
IRF8010PBF DISTI # 7840290	Infineon Technologies AG	MOSFET N-CH 100V 80A SMPS HEXFET TO220AB, PK	210	5:£1.5440 25:£1.2240
IRF8010PBF DISTI # 9128696	Infineon Technologies AG	MOSFET N-CH 100V 80A SMPS HEXFET TO220AB, TU	50	50:£1.2500 250:£1.0470 1000:£0.7560 2500:£0.7030
IRF8010PBF DISTI # 7840290P	Infineon Technologies AG	MOSFET N-CH 100V 80A SMPS HEXFET TO220AB, TU	425	25:£1.2240
IRF8010PBF	Infineon Technologies AG		127
IRF8010PBF DISTI # 8657823	Infineon Technologies AG	MOSFET, N, 100V, 80A, TO-220 RoHS: Compliant	845	5:£1.4200 25:£1.2400 100:£1.0400 250:£0.9740 500:£0.9080
IRF8010PBF DISTI # C1S322000486865	Infineon Technologies AG	Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	846	500:$0.9257 100:$1.0596 10:$1.3186
IRF8010PBF DISTI # C1S327400158178	Infineon Technologies AG	Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	125	50:$0.8830 10:$0.8930 5:$0.9570
IRF8010PBF	Infineon Technologies AG	RoHS(ship within 1day)	100	1:$3.1700 10:$2.6100 50:$2.1000 100:$1.7900 500:$1.7000 1000:$1.6700
IRF8010PBF DISTI # 8657823	Infineon Technologies AG	MOSFET, N, 100V, 80A, TO-220 RoHS: Compliant	950	1:$3.1500 10:$2.6800 100:$2.1400 500:$1.8700 1000:$1.5500 2500:$1.4400 5000:$1.3900 10000:$1.3400

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IRF8010PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes