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IRF8113PBF

IRF8113PBF
Mfr. #:
IRF8113PBF
Manufacturer:
Infineon / IR
Description:
MOSFET 30V 1 N-CH HEXFET 6mOhms 24nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRF8113PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF8113PBF DatasheetIRF8113PBF Datasheet (P4-P6)IRF8113PBF Datasheet (P7-P9)IRF8113PBF Datasheet (P10)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
16.6 A
Rds On - Drain-Source Resistance:
7.4 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
24 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.5 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
1.75 mm
Length:
4.9 mm
Transistor Type:
1 N-Channel
Type:
HEXFET Power MOSFET
Width:
3.9 mm
Brand:
Infineon / IR
Fall Time:
3.5 ns
Product Type:
MOSFET
Rise Time:
8.9 ns
Factory Pack Quantity:
95
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
17 ns
Typical Turn-On Delay Time:
13 ns
Part # Aliases:
SP001572234
Unit Weight:
0.019048 oz
Tags
IRF811, IRF81, IRF8, IRF
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
IRF8113PBF
DISTI # 19915349		Infineon Technologies AGTrans MOSFET N-CH 30V 17.2A 8-Pin SOIC Tube
RoHS: Compliant		1489
  • 137:$0.4575
IRF8113TRPBF
DISTI # IRF8113PBFCT-ND		Infineon Technologies AGMOSFET N-CH 30V 17.2A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1306In Stock
  • 1000:$0.3957
  • 500:$0.4947
  • 100:$0.6258
  • 10:$0.8160
  • 1:$0.9300
IRF8113TRPBF
DISTI # IRF8113PBFDKR-ND		Infineon Technologies AGMOSFET N-CH 30V 17.2A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1306In Stock
  • 1000:$0.3957
  • 500:$0.4947
  • 100:$0.6258
  • 10:$0.8160
  • 1:$0.9300
IRF8113PBF
DISTI # IRF8113PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 17.2A 8-SOIC
RoHS: Compliant
Min Qty: 3800
Container: Tube		Limited Supply - Call
    IRF8113TRPBF
    DISTI # IRF8113PBFTR-ND    		Infineon Technologies AGMOSFET N-CH 30V 17.2A 8-SOIC
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 28000:$0.3056
    • 12000:$0.3122
    • 8000:$0.3242
    • 4000:$0.3482
    IRF8113PBF
    DISTI # IRF8113PBF    		Infineon Technologies AGTrans MOSFET N-CH 30V 17.2A 8-Pin SOIC - Bulk (Alt: IRF8113PBF)
    Min Qty: 758
    Container: Bulk    		Americas - 0
    • 7580:$0.4189
    • 3790:$0.4279
    • 2274:$0.4439
    • 1516:$0.4619
    • 758:$0.4809
    IRF8113PBF
    DISTI # 19K8334    		Infineon Technologies AGTrans MOSFET N-CH 30V 17.2A 8-Pin SOIC - Bulk (Alt: 19K8334)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk    		Americas - 0
      IRF8113PBF
      DISTI # 19K8334      		Infineon Technologies AGN CHANNEL MOSFET, 30V, 17.2A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:17.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0056ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V RoHS Compliant: Yes1489
      • 1:$0.3660
      • 10:$0.3660
      • 100:$0.3660
      • 500:$0.3660
      • 1000:$0.3660
      • 2500:$0.3660
      • 10000:$0.3660
      IRF8113PBF
      DISTI # 97K2236      		Infineon Technologies AGMOSFET Transistor, N Channel, 17.2 A, 30 V, 5.6 mohm, 10 V, 2.2 V RoHS Compliant: Yes1043
      • 10000:$0.4240
      • 2500:$0.4420
      • 1000:$0.4980
      • 500:$0.6310
      • 100:$0.7140
      • 10:$0.9300
      • 1:$1.0800
      IRF8113PBF
      DISTI # 70017009      		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 4.7 Milliohms,ID 17.2A,SO-8,PD 2.5W,VGS +/-2
      RoHS: Compliant      		0
      • 1:$1.2100
      • 2:$1.1860
      • 5:$1.1500
      • 10:$1.1010
      • 25:$1.0290
      IRF8113PBF
      DISTI # 942-IRF8113PBF      		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 6mOhms 24nC
      RoHS: Compliant      		728
      • 1:$1.0700
      • 10:$0.9210
      • 100:$0.7070
      • 500:$0.6250
      • 1000:$0.4930
      • 2500:$0.4380
      • 10000:$0.4200
      IRF8113PBFInternational RectifierPower Field-Effect Transistor, 17.2A I(D), 30V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA
      RoHS: Compliant      		1385
      • 1000:$0.4300
      • 500:$0.4600
      • 100:$0.4800
      • 25:$0.5000
      • 1:$0.5300
      IRF8113PBFInternational Rectifier*** FREE SHIPPING ORDERS OVER $100 ***17
      • 16:$1.0296
      • 4:$1.3728
      • 1:$1.7160
      IRF8113PBFInternational Rectifier 22
        IRF8113PBF
        DISTI # 1013450        		Infineon Technologies AGMOSFET, N, LOGIC, SO-8
        RoHS: Compliant        		1043
        • 500:$0.9610
        • 100:$1.1000
        • 10:$1.4200
        • 1:$1.6500
        IRF8113PBF
        DISTI # 1013450        		Infineon Technologies AGMOSFET, N, LOGIC, SO-81235
        • 100:£0.6800
        • 25:£0.8860
        • 5:£0.9890
        IRF8113PBFInternational Rectifier 
        RoHS: Compliant        		Europe - 1710
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          686
          On Order:
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