IRF81

IRF8113PBF vs IRF810 vs IRF8113PBF-1

 
PartNumberIRF8113PBFIRF810IRF8113PBF-1
DescriptionMOSFET 30V 1 N-CH HEXFET 6mOhms 24nC
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current16.6 A--
Rds On Drain Source Resistance7.4 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge24 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height1.75 mm--
Length4.9 mm--
Transistor Type1 N-Channel--
TypeHEXFET Power MOSFET--
Width3.9 mm--
BrandInfineon / IR--
Fall Time3.5 ns--
Product TypeMOSFET--
Rise Time8.9 ns--
Factory Pack Quantity95--
SubcategoryMOSFETs--
Typical Turn Off Delay Time17 ns--
Typical Turn On Delay Time13 ns--
Part # AliasesSP001572234--
Unit Weight0.019048 oz--
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRF8113TRPBF MOSFET MOSFT 30V 16.6A 6mOhm 24nC
IRF8113PBF MOSFET 30V 1 N-CH HEXFET 6mOhms 24nC
IRF8113TRPBF. TRENCH_MOSFETS , ROHS COMPLIANT: YES
IRF8113TRPBF-CUT TAPE New and Original
IRF810 New and Original
IRF8113PBF-1 New and Original
IRF8113TRPBF-1 New and Original
IRF8113UTRPBF New and Original
IRF814PBF New and Original
Infineon Technologies
Infineon Technologies
IRF8113 MOSFET N-CH 30V 17.2A 8-SOIC
IRF8113GPBF MOSFET N-CH 30V 17.2A 8-SO
IRF8113TR MOSFET N-CH 30V 17.2A 8-SOIC
IRF8113TRPBF MOSFET N-CH 30V 17.2A 8-SOIC
IRF8113GTRPBF MOSFET N-CH 30V 17.2A 8-SOIC
IRF8113PBF IGBT Transistors MOSFET 30V 1 N-CH HEXFET 6mOhms 24nC
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