BSC066N06NSATMA1

BSC066N06NSATMA1
Mfr. #:
BSC066N06NSATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET MV POWER MOS
Lifecycle:
New from this manufacturer.
Datasheet:
BSC066N06NSATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSC066N06NSATMA1 DatasheetBSC066N06NSATMA1 Datasheet (P4-P6)BSC066N06NSATMA1 Datasheet (P7-P9)BSC066N06NSATMA1 Datasheet (P10)
ECAD Model:
More Information:
BSC066N06NSATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PG-TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
64 A
Rds On - Drain-Source Resistance:
6.6 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.1 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
17 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
46 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Series:
OptiMOS 5
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
32 S
Fall Time:
3 ns
Product Type:
MOSFET
Rise Time:
3 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
12 ns
Typical Turn-On Delay Time:
7 ns
Part # Aliases:
BSC066N06NS SP001067000
Unit Weight:
0.003527 oz
Tags
BSC066, BSC06, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***v
    S***v
    RU

    Norms all on 8 ohms

    2019-06-03
    A***o
    A***o
    UA

    Came 3 volt seules,In the photo innotecsQuality is normal, color is correct

    2019-05-02
***et
Trans MOSFET N-CH 60V 64A 8-Pin TDSON T/R
***nell
MOSFET, N-CH, 60V, 64A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 64A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0055ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 46W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***emi
Single N-Channel Power MOSFET 60V, 71A, 6.1mΩ Power MOSFET 60 V, 6.4 mohm, 67 A, Single N-Channel
***ical
Trans MOSFET N-CH 60V 17A Automotive 5-Pin(4+Tab) SO-FL T/R
*** Stop Electro
Power Field-Effect Transistor, 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ure Electronics
N-Channel 60V 17A, 71A 3.6W 61W Surface Mount 5-DFN (5x6) MOSFET
***enic
60V 17A 3.6W 6.1m´Î@10V35A 2V@250Ã×A N Channel DFN-5 MOSFETs ROHS
***nell
MOSFET, N-CH, 60V, 71A, DFN-5; Transistor Polarity: N Channel; Continuous Drain Current Id: 71A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0051ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 61W; Transistor Case Style: DFN; No. of Pins: 5Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ure Electronics
NTMFS5 Series 60 V 17 A 6.1 mOhm Single N-Channel MOSFET - DFN-5
***Yang
Trans MOSFET N-CH 60V 71A 8-Pin SO-FL T/R - Tape and Reel
***enic
60V 71A 3.6W 6.1m´Î@10V35A 2V@250Ã×A N Channel SO-8FL MOSFETs ROHS
***ark
NFET SO8FL 40V 68A 6.7MOH / REEL ROHS COMPLIANT: YES
***nell
MOSFET, N-CH, 60V, 71A, DFN-5; Transistor Polarity: N Channel; Continuous Drain Current Id: 71A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0051ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power
*** Source Electronics
Single N-Channel Field Effect Transistor
*** Stop Electro
Power Field-Effect Transistor, 71A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
*** Services
CoC and 2-years warranty / RFQ for pricing
***et
Trans MOSFET N-CH 60V 21.5A 8-Pin PowerPAK SO T/R
*** Americas
MOSFET 60V 6mOhm@10V 60A N-Ch G-IV
***i-Key
MOSFET N-CH 60V 60A PPAK SO-8
***ark
N-Channel 60-V (D-S) Mosfet
*** Europe
N-CH POWERPAK 60V SO-8 BWL
***et Europe
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) TO-263
***or
MOSFET N-CH 60V 80A TO263-3
***i-Key Marketplace
N-CHANNEL POWER MOSFET
***el Electronic
Power Field-Effect Transistor, 80A I(D), 60V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
***el Nordic
Contact for details
***emi
Single N-Channel Power MOSFET 60V, 70A, 6.5mΩ Power MOSFET 60V, 70A, 6.5 mOhm, Single N-Channel, u8FL, Logic Level
***Yang
Trans MOSFET N-CH 60V 16A 8-Pin WDFN T/R - Tape and Reel
***roFlash
Power Field-Effect Transistor, 16A I(D), 60V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N-CH, AEC-Q101, 60V, 70A, WDFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0054ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 63W; Transistor Case Style: WDFN; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ark
Mosfet Transistor, N Channel, 79 A, 60 V, 0.0071 Ohm, 10 V, 4 V
***ure Electronics
Single N-Channel 60 V 8.4 mOhm 46 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH 60V 79A 3-Pin(2+Tab) D2PAK Tube
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 60V,RDS(ON) 7.1 Milliohms,ID 79A,D2Pak,PD 110W,VGS+/-20V
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Part # Mfg. Description Stock Price
BSC066N06NSATMA1
DISTI # BSC066N06NSATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 60V 64A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.5144
BSC066N06NSATMA1
DISTI # BSC066N06NSATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 60V 64A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.5976
  • 500:$0.7569
  • 100:$0.9760
  • 10:$1.2350
  • 1:$1.3900
BSC066N06NSATMA1
DISTI # BSC066N06NSATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 60V 64A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.5976
  • 500:$0.7569
  • 100:$0.9760
  • 10:$1.2350
  • 1:$1.3900
BSC066N06NSATMA1
DISTI # BSC066N06NSATMA1
Infineon Technologies AGTrans MOSFET N-CH 60V 64A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC066N06NSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.5059
  • 5002:$0.4879
  • 10002:$0.4699
  • 25000:$0.4539
  • 50000:$0.4459
BSC066N06NSATMA1
DISTI # 13AC8334
Infineon Technologies AGMOSFET, N-CH, 60V, 64A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:64A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0055ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power DissipationRoHS Compliant: Yes0
  • 1:$1.1600
  • 10:$0.9850
  • 25:$0.9090
  • 50:$0.8320
  • 100:$0.7560
  • 250:$0.7130
  • 500:$0.6690
  • 1000:$0.5280
BSC066N06NS
DISTI # 726-BSC066N06NS
Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant
0
  • 1:$1.1600
  • 10:$0.9850
  • 100:$0.7560
  • 500:$0.6690
  • 1000:$0.5280
  • 5000:$0.4680
BSC066N06NSATMA1
DISTI # 726-BSC066N06NSATMA1
Infineon Technologies AGMOSFET MV POWER MOS
RoHS: Compliant
0
  • 1:$1.1600
  • 10:$0.9850
  • 100:$0.7560
  • 500:$0.6690
  • 1000:$0.5280
  • 5000:$0.4680
BSC066N06NSATMA1
DISTI # 2725811
Infineon Technologies AGMOSFET, N-CH, 60V, 64A, TDSON
RoHS: Compliant
0
  • 5:£0.8370
  • 25:£0.7520
  • 100:£0.5780
  • 250:£0.5450
  • 500:£0.5110
BSC066N06NSATMA1
DISTI # 2725811
Infineon Technologies AGMOSFET, N-CH, 60V, 64A, TDSON
RoHS: Compliant
0
  • 1:$2.2200
  • 10:$1.9700
  • 100:$1.5600
  • 500:$1.2100
  • 1000:$0.9530
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Availability
Stock:
Available
On Order:
1987
Enter Quantity:
Current price of BSC066N06NSATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.15
$1.15
10
$0.98
$9.85
100
$0.76
$75.60
500
$0.67
$334.50
1000
$0.53
$528.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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