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BSC066N06NSATMA1

P1-P3P4-P6P7-P9P10-P10
Type
BSC066N06NS
OptiMOS
TM
Power-Transistor
Features
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
V
GS
=10 V, T
C
=25 °C
64 A
V
GS
=10 V, T
C
=100 °C
41
V
GS
=10 V, T
C
=25 °C,
R
thJA
=50K/W
2)
15
Pulsed drain current
3)
I
D,pulse
T
C
=25 °C
256
Avalanche energy, single pulse
4)
E
AS
I
D
=40 A, R
GS
=25 W
21 mJ
Gate source voltage
V
GS
±20 V
3)
See figure 3 for more detailed information
Value
1)
J-STD20 and JESD22
4)
See figure 13 for more detailed information
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
V
DS
60
V
R
DS(on),max
mW
I
D
A
Q
OSS
19
nC
Q
G
(0V..10V)
17
nC
Product Summary
PG-TDSON-8
Type
Package
Marking
BSC066N06NS
PG-TDSON-8
066N06NS
64
Rev.2.0 page 1 2013-10-17
BSC066N06NS
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Power dissipation
P
tot
T
C
=25 °C
46 W
T
A
=25 °C,
R
thJA
=50 K/W
2)
2.5
Operating and storage temperature
T
j
, T
stg
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
bottom - - 2.7 K/W
top - - 20
Device on PCB
R
thJA
6 cm
2
cooling area
2)
- - 50
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
=1 mA
60 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=20 µA
2.1 2.8 3.3
Zero gate voltage drain current
I
DSS
V
DS
=60 V, V
GS
=0 V,
T
j
=25 °C
- 0.1 1 µA
V
DS
=60 V, V
GS
=0 V,
T
j
=125 °C
- 10 100
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
- 10 100 nA
R
DS(on)
V
GS
=10 V, I
D
=50 A
- 5.5 6.6
mW
V
GS
=6 V, I
D
=12.5 A
- 8.2 9.9
Gate resistance
R
G
- 1.2 1.8
W
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=50 A
32 65 - S
Value
Values
Drain-source on-state resistance
Rev.2.0 page 2 2013-10-17
BSC066N06NS
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
C
iss
- 1200 1500 pF
Output capacitance
C
oss
- 300 375
Reverse transfer capacitance
C
rss
- 19 38
Turn-on delay time
t
d(on)
- 7 - ns
Rise time
t
r
- 3 -
Turn-off delay time
t
d(off)
- 12 -
Fall time
t
f
- 3 -
Gate Charge Characteristics
5)
Gate to source charge
Q
gs
- 6.3 - nC
Gate charge at threshold
Q
g(th)
- 3.4 -
Gate to drain charge
Q
gd
- 3.6 5.1
Switching charge
Q
sw
- 6.5 -
Gate charge total
Q
g
- 17 21
Gate plateau voltage
V
plateau
- 5.1 - V
Gate charge total, sync. FET
Q
g(sync)
V
DS
=0.1 V,
V
GS
=0 to 10 V
- 15 - nC
Output charge
Q
oss
V
DD
=30 V, V
GS
=0 V
- 19 -
Reverse Diode
Diode continuous forward current
I
S
- - 40 A
Diode pulse current
I
S,pulse
- - 256
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=40 A,
T
j
=25 °C
- 0.95 1.2 V
Reverse recovery time
t
rr
- 23 37 ns
Reverse recovery charge
Q
rr
- 52 - nC
5)
See figure 16 for gate charge parameter definition
V
R
=30 V, I
F
=40 A,
di
F
/dt=100 A/µs
T
C
=25 °C
Values
V
GS
=0 V, V
DS
=30 V,
f=1 MHz
V
DD
=30 V, V
GS
=10 V,
I
D
=50 A, R
G,ext
=1.6 W
V
DD
=30 V, I
D
=50 A,
V
GS
=0 to 10 V
Rev.2.0 page 3 2013-10-17
P1-P3P4-P6P7-P9P10-P10

BSC066N06NSATMA1

Mfr. #:
Buy BSC066N06NSATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET MV POWER MOS
Lifecycle:
New from this manufacturer.
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