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MRFE6S9125NR1

MRFE6S9125NR1
Mfr. #:
MRFE6S9125NR1
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV6E 125W
Lifecycle:
New from this manufacturer.
Datasheet:
MRFE6S9125NR1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
MRFE6S9125NR1 more Information
Product Attribute
Attribute Value
Manufacturer:
NXP
Product Category:
RF MOSFET Transistors
RoHS:
E
Transistor Polarity:
N-Channel
Technology:
Si
Vds - Drain-Source Breakdown Voltage:
- 500 mV, 66 V
Gain:
20.2 dB
Output Power:
27 W
Minimum Operating Temperature:
- 65 C
Maximum Operating Temperature:
+ 150 C
Mounting Style:
SMD/SMT
Package / Case:
TO-270-4
Packaging:
Reel
Configuration:
Single
Height:
2.64 mm
Length:
17.58 mm
Operating Frequency:
880 MHz
Series:
MRFE6S9125N
Width:
9.07 mm
Brand:
NXP / Freescale
Number of Channels:
1 Channel
Channel Mode:
Enhancement
Moisture Sensitive:
Yes
Product Type:
RF MOSFET Transistors
Factory Pack Quantity:
500
Subcategory:
MOSFETs
Vgs - Gate-Source Voltage:
- 0.5 V, 12 V
Vgs th - Gate-Source Threshold Voltage:
2.1 V
Part # Aliases:
935314059528
Unit Weight:
0.058073 oz
Tags
MRFE6S912, MRFE6S91, MRFE6S9, MRFE6S, MRFE6, MRFE, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***v
    A***v
    RU

    Super

    2019-06-30
    U***n
    U***n
    KZ

    All leds came exactly 100 pieces, work, photopolymer curing, came quickly.

    2019-02-23
***escale Semiconductor
Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFET, 800 MHz, 27 W Avg., 28 V
***W
RF Power Transistor,865 to 960 MHz, 125 W, Typ Gain in dB is 20.2 @ 880 MHz, 28 V, LDMOS, SOT1736
***et Europe
Transistor RF FET N-CH 66V 865MHz to 960MHz 5-Pin TO-270WB T/R
***ical
Trans RF MOSFET N-CH 66V 5-Pin TO-270 WB EP T/R
***S
French Electronic Distributor since 1988
MRFE6S9125N Lateral N-Channel RF Power MOSFET
NXP's MRFE6S9125N Lateral N-Channel RF Power MOSFET is designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. NXP's MRFE6S9125N is characterized with series equivalent large-signal impedance parameters, and is internally matched for ease of use, it has an integrated ESD protection, and comes in a 225ºC capable plastic package. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.Learn More
Part # Mfg. Description Stock Price
MRFE6S9125NR1
DISTI # 12029756		NXP SemiconductorsTrans RF MOSFET N-CH 66V 5-Pin TO-270 W T/R500
  • 2:$81.9500
MRFE6S9125NR1
DISTI # MRFE6S9125NR1CT-ND		NXP SemiconductorsFET RF 66V 880MHZ TO-270-4
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    MRFE6S9125NR1
    DISTI # MRFE6S9125NR1DKR-ND    		NXP SemiconductorsFET RF 66V 880MHZ TO-270-4
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      MRFE6S9125NR1
      DISTI # MRFE6S9125NR1TR-ND      		NXP SemiconductorsFET RF 66V 880MHZ TO-270-4
      RoHS: Compliant
      Min Qty: 500
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 500:$65.3852
      MRFE6S9125NR1
      DISTI # V36:1790_07204219      		NXP SemiconductorsTrans RF MOSFET N-CH 66V 5-Pin TO-270 W T/R0
        MRFE6S9125NR1
        DISTI # MRFE6S9125NR1        		Avnet, Inc.Trans MOSFET N-CH 66V 5-Pin TO-270 WB EP T/R (Alt: MRFE6S9125NR1)
        RoHS: Compliant
        Min Qty: 500
        Container: Tape and Reel        		Europe - 0
        • 5000:€56.9900
        • 3000:€61.0900
        • 2000:€65.7900
        • 1000:€68.3900
        • 500:€71.1900
        MRFE6S9125NR1
        DISTI # MRFE6S9125NR1        		Avnet, Inc.Trans MOSFET N-CH 66V 5-Pin TO-270 WB EP T/R - Tape and Reel (Alt: MRFE6S9125NR1)
        RoHS: Compliant
        Min Qty: 500
        Container: Reel        		Americas - 0
        • 5000:$62.4900
        • 3000:$63.6900
        • 2000:$66.0900
        • 1000:$68.7900
        • 500:$71.5900
        MRFE6S9125NR1
        DISTI # 51M5653        		NXP SemiconductorsSINGLE N-CDMA, GSM EDGE LATERAL N-CHANNEL RF POWER MOSFET, 800 MHZ, 27 W AVG., 28 V TR0
        • 1000:$58.5100
        • 500:$59.4900
        • 1:$61.4600
        MRFE6S9125NR1
        DISTI # 841-MRFE6S9125NR1        		NXP SemiconductorsRF MOSFET Transistors HV6E 125W
        RoHS: Compliant        		0
        • 500:$63.4200
        MRFE6S9125NR1
        DISTI # MRFE6S9125NR1        		NXP SemiconductorsRF POWER TRANSISTOR
        RoHS: Compliant        		500
        • 500:$73.7500
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        OMO.#: OMO-MRFE6S9125NB-1190

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        Mfr.#: MRFE6S8046NR1

        OMO.#: OMO-MRFE6S8046NR1-NXP-SEMICONDUCTORS

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        Availability
        Stock:
        Available
        On Order:
        1000
        Enter Quantity:
        Current price of MRFE6S9125NR1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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