We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Image | Part # | Description |
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Mfr.#: SQM200N04-1M8_GE3 OMO.#: OMO-SQM200N04-1M8-GE3 |
MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified | |
Mfr.#: SQM200JB-0R62 OMO.#: OMO-SQM200JB-0R62 |
Wirewound Resistors - Through Hole | |
Mfr.#: SQM200JB-0R11 OMO.#: OMO-SQM200JB-0R11 |
Wirewound Resistors - Through Hole | |
Mfr.#: SQM200JB-560R OMO.#: OMO-SQM200JB-560R |
Wirewound Resistors - Through Hole | |
Mfr.#: SQM200JB-68R OMO.#: OMO-SQM200JB-68R |
Wirewound Resistors - Through Hole | |
Mfr.#: SQM200JB-2R4 OMO.#: OMO-SQM200JB-2R4 |
Wirewound Resistors - Through Hole | |
Mfr.#: SQM200JB-0R68 OMO.#: OMO-SQM200JB-0R68 |
Wirewound Resistors - Through Hole | |
Mfr.#: SQM200JB-220R OMO.#: OMO-SQM200JB-220R |
Wirewound Resistors - Through Hole | |
Mfr.#: SQM200N04-1M1L OMO.#: OMO-SQM200N04-1M1L-1190 |
New and Original | |
Mfr.#: SQM200N041M1LGE3 OMO.#: OMO-SQM200N041M1LGE3-1190 |
Power Field-Effect Transistor, 200A I(D), 40V, 0.0011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |