NDC651N

NDC651N
Mfr. #:
NDC651N
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET N-Ch LL FET Enhancement Mode
Lifecycle:
New from this manufacturer.
Datasheet:
NDC651N Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NDC651N DatasheetNDC651N Datasheet (P4-P6)NDC651N Datasheet (P7)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SSOT-6
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
3.2 A
Rds On - Drain-Source Resistance:
38 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1.6 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
1.1 mm
Length:
2.9 mm
Product:
MOSFET Small Signal
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
1.6 mm
Brand:
ON Semiconductor / Fairchild
Fall Time:
19 ns
Product Type:
MOSFET
Rise Time:
19 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
15 ns
Typical Turn-On Delay Time:
9 ns
Part # Aliases:
NDC651N_NL
Unit Weight:
0.000557 oz
Tags
NDC651, NDC65, NDC6, NDC
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 3.2A 6-Pin SuperSOT T/R
***i-Key
MOSFET N-CH 30V 3.2A SSOT6
***ser
MOSFETs N-Ch LL FET Enhancement Mode
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:3.2A; On Resistance, Rds(on):0.06ohm; Drain-Source Breakdown Voltage:30V; Gate-Source Voltage:6V; Leaded Process Compatible:No RoHS Compliant: No
***inecomponents.com
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Part # Mfg. Description Stock Price
NDC651N
DISTI # NDC651NTR-ND
ON SemiconductorMOSFET N-CH 30V 3.2A SSOT6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    NDC651N
    DISTI # NDC651NCT-ND
    ON SemiconductorMOSFET N-CH 30V 3.2A SSOT6
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      NDC651N
      DISTI # NDC651NDKR-ND
      ON SemiconductorMOSFET N-CH 30V 3.2A SSOT6
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        NDC651N
        DISTI # 512-NDC651N
        ON SemiconductorMOSFET N-Ch LL FET Enhancement Mode
        RoHS: Compliant
        0
          NDC651N_Q
          DISTI # 512-NDC651N_Q
          ON SemiconductorMOSFET N-Ch LL FET Enhancement Mode
          RoHS: Not compliant
          0
            NDC651NFairchild Semiconductor Corporation 195
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              • 574:$1.0063
              • 267:$1.0465
              • 1:$3.2200
              NDC651NFairchild Semiconductor Corporation 418
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                Availability
                Stock:
                Available
                On Order:
                1000
                Enter Quantity:
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