BFP840FESDH6327XTSA1

Mfr. #:: BFP840FESDH6327XTSA1
Manufacturer:: Infineon Technologies
Description:: RF Bipolar Transistors RF BIP TRANSISTORS
Lifecycle:: New from this manufacturer.
Datasheet:: BFP840FESDH6327XTSA1 Datasheet
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Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: RF Bipolar Transistors

RoHS:: Y

Series:: BFP840

Transistor Type:: Bipolar

Technology:: SiGe

Collector- Emitter Voltage VCEO Max:: 2.25 V

Emitter- Base Voltage VEBO:: 2.6 V

Continuous Collector Current:: 35 mA

Maximum Operating Temperature:: + 150 C

Configuration:: Dual

Mounting Style:: SMD/SMT

Package / Case:: TSFP-4

Packaging:: Reel

Operating Frequency:: 85 GHz

Type:: RF Silicon Germanium

Brand:: Infineon Technologies

Pd - Power Dissipation:: 75 mW

Product Type:: RF Bipolar Transistors

Factory Pack Quantity:: 3000

Subcategory:: Transistors

Part # Aliases:: 840FESD BFP BFP84FESDH6327XT H6327 SP000977846

Unit Weight:: 0.000063 oz

Tags: BFP840FESDH, BFP840FE, BFP840F, BFP840, BFP84, BFP8, BFP

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BFP840FESDH6327XTSA1 Description

***ure Electronics: RF Bipolar Transistor with an integrated ESD protection suitable for 5 GHz band

***icontronic: RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, KA Band, Silicon Germanium Carbon, NPN

***nell: RF TRANSISTOR, NPN, 2.25V, 85GHZ, TSFP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.25V; Transition Frequency ft: 85GHz; Power Dissipation Pd: 75mW; DC Collector Current: 35mA; DC Current Gain hFE: 150hFE; RF Transistor Case: TSFP; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: The BFP840FESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications, TSFP-4-1, RoHS

***ineon: The BFP840FESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP840FESD provides inherently good input and output power match as well as inherently good noise match at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the WiFi application. Integrated protection elements at in- and output make the device robust against ESD and excessive RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The device comes in an easy to use thin flat package with visible leads. | Summary of Features: Robust high performance low noise amplifier based on Infineons reliable, high volume SiGe:C wafer technology; 2 kV ESD robustness (HBM) due to integrated protection circuits; High maximum RF input power of 21 dBm; 0.6 dB minimum noise figure typical at 2.4 GHz, 0.8 dB at 5.5 GHz, 6 mA; 26 dB maximum gain (Gma, Gms) typical at 2.4 GHz, 20.5 dB at 5.5 GHz, 25 mA; 23.5 dBm OIP3 typical at 5.5 GHz, 25 mA; Accurate SPICE GP model available to enable effective design in process (see chapter 6); Thin, small, flat, Pb- and halogen free (RoHS compliant) package with visible leads | Target Applications: Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB, Bluetooth; Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB; Multimedia applications such as mobile/portable TV, CATV, FM Radio; 3G/4G UMTS/LTE mobile phone applications; ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications

***ark: Trans Gp Bjt Npn 2.8V 0.04A 4-Pin(3+Tab) So T/R Rohs Compliant: Yes |Nxp BFU725F/N1,115

*** Stop Electro: RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, Silicon Germanium, NPN

***enic: 2.8V 136mW 25mA 280@10mA,2V 55GHz NPN +150¡æ@(Tj) SOT-343 Bipolar Transistors - BJT ROHS

***ure Electronics: BFU725 Series 2.8 V 18 dB Gain NPN Silicon Germanium RF Transistor - SOT-343F-4

*** Semiconductors SCT: NPN Wideband Silicon Germanium RF Transistor, DFP4, RoHS

***ment14 APAC: RF Transistor, NPN, 2.8V, 55GHZ, SOT343F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.8V; Transition Frequency ft:55GHz; Power

***nell: RF TRANSISTOR, NPN, 2.8V, 55GHZ, SOT343F; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.8V; Transition Frequency ft: 55GHz; Power Dissipation Pd: 136mW; DC Collector Current: 25mA; DC Current Gain hFE: 160hFE; RF Transistor Case: SOT-343F; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ical: Trans RF BJT NPN 2.8V 0.03A 197mW 4-Pin(3+Tab) DFP T/R

***ure Electronics: BFU730 Series 2.8 V 12.5 dB Gain NPN Silicon Germanium RF Transistor-SOT-343F-4

*** Semiconductors SCT: NPN Wideband Silicon Germanium RF Transistor, DFP4, RoHS

***ment14 APAC: RF Transistor, NPN, 2.8V, 55GHZ, SOT343F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.8V; Transition Frequency ft:55GHz; Power

***nell: RF TRANSISTOR, NPN, 2.8V, 55GHZ, SOT343F; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.8V; Transition Frequency ft: 55GHz; Power Dissipation Pd: 197mW; DC Collector Current: 5mA; DC Current Gain hFE: 205hFE; RF Transistor Case: SOT-343F; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ca Corp: RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Silicon Germanium, NPN

***ical: Trans RF BJT NPN 2.8V 0.07A 220mW 4-Pin(3+Tab) DFP T/R

***enic: 2.8V 220mW 25mA 330@10mA,2V 45GHz NPN +150¡æ@(Tj) SOT-343F Bipolar Transistors - BJT ROHS

***ure Electronics: BFU760 Series 2.8 V 25.5 dB Gain NPN Silicon Germanium RF Transistor-SOT-343F-4

*** Semiconductors SCT: NPN Wideband Silicon Germanium RF Transistor, DFP4, RoHS

***ment14 APAC: RF Transistor, NPN, 2.8V, 45GHZ, SOT343F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.8V; Transition Frequency ft:45GHz; Power

***nell: RF TRANSISTOR, NPN, 2.8V, 45GHZ, SOT343F; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.8V; Transition Frequency ft: 45GHz; Power Dissipation Pd: 220mW; DC Collector Current: 70mA; DC Current Gain hFE: 155hFE; RF Transistor Case: SOT-343F; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ark: Trans Gp Bjt Npn 2.8V 0.1A 4-Pin(3+Tab) Dfp T/R Rohs Compliant: Yes |Nxp BFU790F,115

*** Stop Electro: RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Silicon Germanium, NPN

***ure Electronics: BFU790 Series 2.8 V 19.5 dB Gain NPN Silicon Germanium RF Transistor-SOT-343F-4

***el Electronic: RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS

*** Semiconductors SCT: NPN wideband silicon germanium RF transistor, DFP4, RoHS

***ment14 APAC: RF TRANSISTOR, NPN, 2.8V, 25GHZ, SOT343F

***nell: RF TRANSISTOR, NPN, 2.8V, 25GHZ, SOT343F; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.8V; Transition Frequency ft: 25GHz; Power Dissipation Pd: 234mW; DC Collector Current: 100mA; DC Current Gain hFE: 235hFE; RF Transistor Case: SOT-343F; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ical: Trans RF BJT NPN 2.8V 0.07A 220mW 4-Pin(3+Tab) DFP T/R

***ure Electronics: BFU768F Series 2.8 V 70 mA 220 mW Surface Mount NPN RF Transistor - SOT-343F

*** Semiconductors SCT: NPN Wideband Silicon Germanium RF Transistor, DFP4, RoHS

***ment14 APAC: Transistor, RF, NPN, 2.8V, 110GHZ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.8V; Transition Frequency ft:110GHz; Power

***nell: TRANSISTOR, RF, NPN, 2.8V, 110GHZ; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.8V; Transition Frequency ft: 110GHz; Power Dissipation Pd: 220mW; DC Collector Current: 70mA; DC Current Gain hFE: 330hFE; RF Transistor Case: SOT-343F; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: BFU768F Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ure Electronics: MC Series 500 mA 50 V NPN High Current Darlington Transistor Array - SOIC-16

***SIT Distribution GmbH: Power Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, Plastic/Epoxy, 16 Pin

*** Electronics: ON SEMICONDUCTOR - MC1413BDG - IC, DARL TRANS ARRAY, NPN, 2V, SOIC-16

***p One Stop Global: Trans Darlington NPN 50V 0.5A Automotive 16-Pin SOIC Tube

***emi: High Voltage, High Current Darlington Transistor Driver Array

***nell: IC, DARL TRANS ARRAY, NPN, 2V, SOIC-16; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2V; Power Dissipation Pd: -; DC Collector Current: 500mA; DC Current Gain hFE: 1000hFE; Transistor Case Style: SOIC; No. of Pins: 16Pins; Operating Temperature Max: 85°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Transistors: 7; Operating Temperature Min: -40°C

***th Star Micro: The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps relays or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage and internal suppression diodes insure freedom from problems associated with inductive loads. Peak inrush currents to 500 mA permit them to drive incandescent lamps. The MC1413 B with a 2.7 kO series input resistor is well suited for systems utilizing a 5.0 V TTL or CMOS Logic.

BFP840FESDH6327XTSA1 More Information

RF Transistors: Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14 GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29 dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

BFPx4 RF Transistors: Infineon's BFPx4 RF Transistors provide the designer the best possible performance, superior flexibility and price/performance ratio. These are widely used for new emerging wireless applications, where the system specification is not yet firmly established. The BFxx Low Noise Amplifiers (LNAs) include devices suitable for use from AM over VHF/UHF up to 14GHz. These are the latest LNA innovations based on Infineon’s reliable high volume 80GHz fT silicon germanium carbon (SiGe:C) heterojunction bipolar technology. They combine uncompromised RF performance with outstanding robustness against high RF input power overdrive and Electrostatic Discharge (ESD). The BGS12SL6 RF MOS Switch is a general purpose 0.1 - 6.0GHz SPDT switch suitable for band/mode switching in cellular systems and WLAN applications. The ESD112B1 TVS ESD/Transient Protection Diode is a bi-directional, ultra-low capacitance ESD/Transient protection diode designed for the protection of RF signal lines.Learn More

RF Solutions: Infineon RF Solutions provide RF products for numerous applications with high-performance, cost-effective devices. RF solutions include transistors, low-noise amplifiers, GPS/GLONASS/COMPASS LNA, switches, modules and tuners.

Market price

Part #	Mfg.	Description	Stock	Price
BFP840FESDH6327XTSA1 DISTI # V72:2272_06391073	Infineon Technologies AG	Trans RF BJT 2.25V 0.035A Automotive 4-Pin TSFP T/R RoHS: Compliant	1528	1000:$0.1739 500:$0.2178 250:$0.2181 100:$0.2249 25:$0.3631 10:$0.4034 1:$0.4769
BFP840FESDH6327XTSA1 DISTI # V36:1790_06391073	Infineon Technologies AG	Trans RF BJT 2.25V 0.035A Automotive 4-Pin TSFP T/R RoHS: Compliant	0
BFP840FESDH6327XTSA1 DISTI # BFP840FESDH6327XTSA1CT-ND	Infineon Technologies AG	RF TRANS NPN 2.6V 85GHZ 4TSFP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3212In Stock	1000:$0.1798 500:$0.2327 100:$0.2962 10:$0.3970 1:$0.4600
BFP840FESDH6327XTSA1 DISTI # BFP840FESDH6327XTSA1DKR-ND	Infineon Technologies AG	RF TRANS NPN 2.6V 85GHZ 4TSFP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3212In Stock	1000:$0.1798 500:$0.2327 100:$0.2962 10:$0.3970 1:$0.4600
BFP840FESDH6327XTSA1 DISTI # BFP840FESDH6327XTSA1TR-ND	Infineon Technologies AG	RF TRANS NPN 2.6V 85GHZ 4TSFP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	75000:$0.1284 30000:$0.1315 15000:$0.1386 6000:$0.1489 3000:$0.1592
BFP840FESDH6327XTSA1 DISTI # 31954169	Infineon Technologies AG	Trans RF BJT 2.25V 0.035A Automotive 4-Pin TSFP T/R RoHS: Compliant	1528	1000:$0.1869 500:$0.2341 250:$0.2345 100:$0.2418 49:$0.3549
BFP840FESDH6327XTSA1 DISTI # SP000977846	Infineon Technologies AG	Trans GP BJT NPN 2.25V 0.035A 4-Pin TSFP T/R (Alt: SP000977846) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 9000	30000:€0.1359 18000:€0.1459 12000:€0.1729 6000:€0.2109 3000:€0.2719
BFP840FESDH6327XTSA1 DISTI # BFP840FESDH6327XTSA1	Infineon Technologies AG	Trans GP BJT NPN 2.25V 0.035A 4-Pin TSFP T/R - Tape and Reel (Alt: BFP840FESDH6327XTSA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.1305 18000:$0.1329 12000:$0.1375 6000:$0.1426 3000:$0.1480
BFP840FESDH6327XTSA1 DISTI # BFP 840FESD H6327	Infineon Technologies AG	Trans GP BJT NPN 2.25V 0.035A 4-Pin TSFP T/R (Alt: BFP 840FESD H6327) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	150000:$0.1300 75000:$0.1317 30000:$0.1334 15000:$0.1351 9000:$0.1388 6000:$0.1426 3000:$0.1467
BFP840FESDH6327XTSA1 DISTI # 50Y1761	Infineon Technologies AG	Bipolar - RF Transistor, NPN, 2.25 V, 85 GHz, 75 mW, 35 mA, 150 RoHS Compliant: Yes	2201	1000:$0.1930 500:$0.2090 250:$0.2250 100:$0.2410 50:$0.2870 25:$0.3340 10:$0.3790 1:$0.4550
BFP840FESDH6327XTSA1. DISTI # 27AC0920	Infineon Technologies AG	Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:2.25V,Transition Frequency ft:85GHz,Power Dissipation Pd:75mW,DC Collector Current:35mA,DC Current Gain hFE:150hFE,RF Transistor Case:TSFP,No. of Pins:4Pins RoHS Compliant: Yes	0	30000:$0.1330 18000:$0.1350 12000:$0.1400 6000:$0.1450 1:$0.1500
BFP840FESDH6327XTSA1 DISTI # 726-BFP840FESDH6327X	Infineon Technologies AG	RF Bipolar Transistors RF BIP TRANSISTORS RoHS: Compliant	5707	1:$0.4400 10:$0.3710 100:$0.2260 1000:$0.1750 3000:$0.1490
BFP 840FESD H6327 DISTI # 726-BFP840FESDH6327	Infineon Technologies AG	RF Bipolar Transistors RF BIP TRANSISTORS RoHS: Compliant	2790	1:$0.4400 10:$0.3710 100:$0.2260 1000:$0.1750 3000:$0.1490
BFP840FESDH6327XTSA1 DISTI # 1702255	Infineon Technologies AG	RF TRANSISTOR 6GHZ LOWNOISE SIGE SOT-343, RL	2900	9000:£0.1220 6000:£0.1260 3000:£0.1350
BFP840FESDH6327XTSA1 DISTI # 2480676RL	Infineon Technologies AG	RF TRANSISTOR, NPN, 2.25V, 85GHZ, TSFP RoHS: Compliant	0	3000:$0.2300 1000:$0.2700 100:$0.3480 10:$0.5710 1:$0.6770
BFP840FESDH6327XTSA1 DISTI # 2480676	Infineon Technologies AG	RF TRANSISTOR, NPN, 2.25V, 85GHZ, TSFP RoHS: Compliant	2201	3000:$0.2300 1000:$0.2700 100:$0.3480 10:$0.5710 1:$0.6770
BFP840FESDH6327XTSA1 DISTI # 2480676	Infineon Technologies AG	RF TRANSISTOR, NPN, 2.25V, 85GHZ, TSFP	2201	500:£0.1390 250:£0.1580 100:£0.1790 25:£0.3170 5:£0.3340
BFP840FESDH6327XTSA1 DISTI # XSKDRABS0032841	Infineon Technologies AG	RoHS: Compliant	6000 in Stock0 on Order	6000:$0.2003 3000:$0.2147

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BFP840FESDH6327XTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes