PartNumber | BFP840FESDH6327XTSA1 | BFP840FESDH6327 |
Description | RF Bipolar Transistors RF BIP TRANSISTORS | |
Manufacturer | Infineon | - |
Product Category | RF Bipolar Transistors | - |
RoHS | Y | - |
Series | BFP840 | - |
Transistor Type | Bipolar | - |
Technology | SiGe | - |
Collector Emitter Voltage VCEO Max | 2.25 V | - |
Emitter Base Voltage VEBO | 2.6 V | - |
Continuous Collector Current | 35 mA | - |
Maximum Operating Temperature | + 150 C | - |
Configuration | Dual | - |
Mounting Style | SMD/SMT | - |
Package / Case | TSFP-4 | - |
Packaging | Reel | - |
Operating Frequency | 85 GHz | - |
Type | RF Silicon Germanium | - |
Brand | Infineon Technologies | - |
Pd Power Dissipation | 75 mW | - |
Product Type | RF Bipolar Transistors | - |
Factory Pack Quantity | 3000 | - |
Subcategory | Transistors | - |
Part # Aliases | 840FESD BFP BFP84FESDH6327XT H6327 SP000977846 | - |
Unit Weight | 0.000063 oz | - |