SISS27DN-T1-GE3

Mfr. #:: SISS27DN-T1-GE3
Manufacturer:: Vishay
Description:: IGBT Transistors MOSFET -30V 5.6mOhm@10V -50A P-Ch G-III
Lifecycle:: New from this manufacturer.
Datasheet:: SISS27DN-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: SISS27DN-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer: VISHAY

Product Category: FETs - Single

Series: SISxxxDN

Packaging: Reel

Mounting-Style: SMD/SMT

Tradename: TrenchFET Power MOSFET

Package-Case: PowerPAK-1212-8

Technology: Si

Number-of-Channels: 1 Channel

Configuration: Single

Transistor-Type: 1 P-Channel

Pd-Power-Dissipation: 57 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 20 ns

Rise-Time: 45 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: - 50 A

Vds-Drain-Source-Breakdown-Voltage: - 30 V

Vgs-th-Gate-Source-Threshold-Voltage: - 1 V to - 2.2 V

Rds-On-Drain-Source-Resistance: 5.6 mOhms

Transistor-Polarity: P-Channel

Typical-Turn-Off-Delay-Time: 50 ns

Typical-Turn-On-Delay-Time: 60 ns

Qg-Gate-Charge: 45 nC

Forward-Transconductance-Min: 52 S

Channel-Mode: Enhancement

Tags: SISS27D, SISS27, SISS2, SISS, SIS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SISS27DN-T1-GE3 More Information

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

Part #	Mfg.	Description	Stock	Price
SISS27DN-T1-GE3 DISTI # SISS27DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 30V 50A PPAK 1212-8S RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.3402
SISS27DN-T1-GE3 DISTI # SISS27DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 30V 50A PPAK 1212-8S RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.3867 500:$0.4833 100:$0.6525 10:$0.8460 1:$0.9700
SISS27DN-T1-GE3 DISTI # SISS27DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 50A PPAK 1212-8S RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.3867 500:$0.4833 100:$0.6525 10:$0.8460 1:$0.9700
SISS27DN-T1-GE3 DISTI # SISS27DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 23A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISS27DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.3099 6000:$0.3009 12000:$0.2889 18000:$0.2809 30000:$0.2729
SISS27DN-T1-GE3 DISTI # SISS27DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 23A 8-Pin PowerPAK 1212 T/R (Alt: SISS27DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SISS27DN-T1-GE3 DISTI # 99W9575	Vishay Intertechnologies	P-CHANNEL 30-V (D-S) MOSFET	0	1:$0.3670 5000:$0.3590 10000:$0.3310 20000:$0.3100 30000:$0.2880 50000:$0.2760
SISS27DN-T1-GE3 DISTI # 70459595	Vishay Siliconix	SISS27DN-T1-GE3 P-channel MOSFET Transistor,23 A,30 V,8-Pin PowerPAK 1212 RoHS: Compliant	0	3000:$0.9590
SISS27DN-T1-GE3 DISTI # 78-SISS27DN-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S RoHS: Compliant	0	1:$0.8500 10:$0.6810 100:$0.5170 500:$0.4270 1000:$0.3420 3000:$0.3100
SISS27DN-T1-GE3 DISTI # 8141323	Vishay Intertechnologies	TRANS MOSFET P-CH 30V 23A, PK	100	20:£0.1870 100:£0.1840
SISS27DN-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S	Americas - Stock

Image	Part #	Description
	Mfr.#: SISS27DN-T1-GE3 OMO.#: OMO-SISS27DN-T1-GE3	MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S
	Mfr.#: SISS27DN-T1-GE3 OMO.#: OMO-SISS27DN-T1-GE3-VISHAY	IGBT Transistors MOSFET -30V 5.6mOhm@10V -50A P-Ch G-III
	Mfr.#: SISS27DN OMO.#: OMO-SISS27DN-1190	New and Original
	Mfr.#: SISS27DN-T1-G3 OMO.#: OMO-SISS27DN-T1-G3-1190	New and Original

SISS27DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes