NTP8G206NG

Mfr. #:: NTP8G206NG
Manufacturer:: ON Semiconductor
Description:: MOSFET GAN 600V 17A 150MO
Lifecycle:: New from this manufacturer.
Datasheet:: NTP8G206NG Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: NTP8G206NG Datasheet NTP8G206NG Datasheet (P4-P6)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: GaN

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 17 A

Rds On - Drain-Source Resistance:: 340 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.6 V

Vgs - Gate-Source Voltage:: 18 V

Qg - Gate Charge:: 6.2 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 96 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Tube

Brand:: ON Semiconductor

Fall Time:: 4 ns

Product Type:: MOSFET

Rise Time:: 4.5 ns

Factory Pack Quantity:: 50

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 9.7 ns

Typical Turn-On Delay Time:: 6.2 ns

Unit Weight:: 0.211644 oz

Tags: NTP8, NTP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NTP8G206NG Description

***ical: Trans MOSFET N-CH GaN 600V 17A 3-Pin(3+Tab) TO-220 Tube

***emi: Power GaN Cascode 600V 150 mOhm Single N-Channel TO-220

***nell: MOSFET, N-CH, 600V, 17A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: 8V; Threshold Voltage Vgs: 2.1V; Power Dissipation Pd: 96W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)

***p One Stop Global: Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220 Full-Pak

***ure Electronics: E Series N Channel 650 V 0.18 O 86 nC Flange Mount Power Mosfet - TO-220FP

***nell: MOSFET, N-CH, 600V, 12A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited

***ical: Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220 Full-Pak

***ure Electronics: E-Series N-Channel 600 V 0.18 O 86 nC Flange Mount Power Mosfet - TO-220FP

***nell: MOSFET, N CH, 600V, 21A, TO-220 FULLPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:227W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

***emi: N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220F

***et Europe: Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220F Rail

*** Stop Electro: Power Field-Effect Transistor, 20.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET, N-CH, 600V, 20.6A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***emi: N-Channel Power MOSFET, SUPERFET® II, FAST, 600V, 20.2A, 199mΩ, TO-220F

***ical: Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220FP Rail

***r Electronics: Power Field-Effect Transistor, 20.2A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N-CH, 600V, 20.2A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: SuperFET®II MOSFET is Fairchild’s brand-new high voltage super-junction MOSFET family, utilizes advanced charge-balance technology for outstandingly low on-state resistance and lower gate charge. This advanced MOSFET is tailored not only to minimize conduction loss but also to achieve superior switching performance. Besides these advantages, it also provides extremely higher dv/dt rate and bigger avalanche energy than conventional super-junction MOSFETs. SuperFET II MOSFET is suitable for various switching power applications aiming for system miniaturization and higher efficiency.

***C: MOSFET N CHANNEL 600V 22A TO220 MOSFET N CHANNEL 600V 22A TO220

***et: Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220 Full-Pak

***ure Electronics: S-Series N-Channel 600 V 0.19 O 98 nC Flange Mount Power Mosfet - TO-220FP

***ment14 APAC: MOSFET, N CH, 600V, 22A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:600V; On Resistance Rds(on):160mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:22A; Power Dissipation Pd:250W; Voltage Vgs Max:20V

***emi: N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 15 A, 260 mΩ, TO-220F

*** Stop Electro: Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***el Electronic: FAIRCHILD SEMICONDUCTOR FCPF260N60E Power MOSFET, N Channel, 15 A, 600 V, 0.22 ohm, 10 V, 2.5 V

***ment14 APAC: MOSFET, N-CH, 600V, 15A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.22ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:36W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Market price

Part #	Mfg.	Description	Stock	Price
NTP8G206NG DISTI # NTP8G206NGOS-ND	ON Semiconductor	MOSFET N-CH 600V 17A TO220 RoHS: Compliant Min Qty: 50 Container: Tube	Limited Supply - Call
NTP8G206NG DISTI # 81Y7053	ON Semiconductor	MOSFET, N-CH, 600V, 17A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:17A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:2.1V,Power RoHS Compliant: Yes	0
NTP8G206NG DISTI # 863-NTP8G206NG	ON Semiconductor	MOSFET GAN 600V 17A 150MO RoHS: Compliant	0	1:$28.4700 5:$28.1800 10:$26.2600 25:$25.0800 100:$22.4300 250:$21.3900
NTP8G206NG DISTI # 2493487	ON Semiconductor	MOSFET, N-CH, 600V, 17A, TO-220-3 RoHS: Compliant	30	1:$45.0500 5:$44.6000 10:$41.5500 25:$39.6900 100:$35.4900 250:$33.8500 500:$32.2200
NTP8G206NG DISTI # 2493487	ON Semiconductor	MOSFET, N-CH, 600V, 17A, TO-220-3 RoHS: Compliant	33	1:£13.7900 5:£13.7800 10:£13.7700

Image	Part #	Description
	Mfr.#: TLV521DCKT OMO.#: OMO-TLV521DCKT	Operational Amplifiers - Op Amps NANOPOWER 1.8V RRIO CMOS INPUT OPERA
	Mfr.#: RGPR10BM40FHTL OMO.#: OMO-RGPR10BM40FHTL	IGBT Transistors 430V 20A 1.6V Vce Ignition IGBT
	Mfr.#: RGPZ10BM40FHTL OMO.#: OMO-RGPZ10BM40FHTL	IGBT Transistors 430V 20A 1.6V Vce Ignition IGBT
	Mfr.#: RGTV00TK65DGC11 OMO.#: OMO-RGTV00TK65DGC11	IGBT Transistors 650V 50A TO-3PFM Field Stp Trnch IGBT
	Mfr.#: SCT3060ALGC11 OMO.#: OMO-SCT3060ALGC11	MOSFET N-Ch 650V SiC 39A 60mOhm TrenchMOS
	Mfr.#: PGA26E19BA OMO.#: OMO-PGA26E19BA	MOSFET MOSFET 600VDC 190mohm X-GaN
	Mfr.#: SCT3022ALGC11 OMO.#: OMO-SCT3022ALGC11	MOSFET N-Ch 650V SiC 93A 22mOhm TrenchMOS
	Mfr.#: C3M0120090D OMO.#: OMO-C3M0120090D	MOSFET G3 SiC MOSFET 900V, 120mOhm
	Mfr.#: HSMR-C280 OMO.#: OMO-HSMR-C280	Standard LEDs - SMD Chip Top Mt Blue InGaN
	Mfr.#: TLV521DCKT OMO.#: OMO-TLV521DCKT-TEXAS-INSTRUMENTS	Operational Amplifiers - Op Amps TLV521 350nA Nanopower, Single, RRIO, CMOS Input, Cost-Optimized Operational Amplifier 5-SC70 -40 to 125

NTP8G206NG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes