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PGA26E19BA

PGA26E19BA
Mfr. #:
PGA26E19BA
Manufacturer:
Panasonic
Description:
MOSFET MOSFET 600VDC 190mohm X-GaN
Lifecycle:
New from this manufacturer.
Datasheet:
PGA26E19BA Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
PGA26E19BA more Information
Product Attribute
Attribute Value
Manufacturer:
Panasonic
Product Category:
MOSFET
RoHS:
Y
Technology:
GaN
Mounting Style:
SMD/SMT
Package / Case:
DFN-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
13 A
Rds On - Drain-Source Resistance:
190 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.2 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
2 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
69 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
X-GaN
Series:
PGA26E19BA
Brand:
Panasonic
Fall Time:
2.4 ns
Moisture Sensitive:
Yes
Product Type:
MOSFET
Rise Time:
5.2 ns
Factory Pack Quantity:
2000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
3.4 ns
Typical Turn-On Delay Time:
3.4 ns
Tags
PGA26E1, PGA26, PGA2, PGA
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
Power Field-Effect Transistor,
***asonic SCT
GaN Power Devices, 600V, DFN 8x8, RoHS
PGA26E X-GaN Power Transistors
Panasonic PGA26E07BA and PGA26E19BA X-GaN Power Transistors are 600V Gallium Nitride power devices based on Gate Injection Transistor (GiT) technology. PGA26E X-GaN power devices deliver Normally-Off operation with extremely high-speed switching characteristics and zero recovery loss.
X-GaN Power Solutions
Panasonic 600V Gallium Nitride (X-GaN) is a very hard, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity. In its pure form, it resists cracking and can be deposited in a thin film on Sapphire (AL2O3) or Silicon Carbide (SiC), despite the mismatch in their lattice constants. X-GaN can be doped with Silicon (Si) or with Oxygen to n-type and with Magnesium (Mg) to p-type; however, the Si and Mg atoms change the way the X-GaN crystals grow, introducing tensile stresses and making them brittle.
Part # Mfg. Description Stock Price
PGA26E19BA
DISTI # 667-PGA26E19BA		Panasonic Electronic ComponentsMOSFET MOSFET 600VDC 190mohm X-GaN
RoHS: Compliant		0
  • 1:$18.2900
  • 10:$17.0700
  • 25:$16.2100
PGA26E19BA-SWEVB008
DISTI # 667-PGA26E19BASWEV8		Panasonic Electronic ComponentsPower Management IC Development Tools 600Vdc 190mOhm X-GaN 1/2 Bridge EVB
RoHS: Compliant		19
  • 1:$400.0000
PGA26E19BA-SWEVB006
DISTI # 667-PGA26E19BASWEVB6		Panasonic Electronic ComponentsPower Management IC Development Tools 600Vdc 190mOhm X-GaN Chopper EVB
RoHS: Compliant		3
  • 1:$300.0000
PGA26E19BA-DB001
DISTI # 667-PGA26E19BADB001		Panasonic Electronic ComponentsPower Management IC Development Tools SMD-ThruHole ConvKit 600VDC 190mohm X-GaN
RoHS: Compliant		0
  • 1:$45.0000
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Availability
Stock:
309
On Order:
2292
Enter Quantity:
Current price of PGA26E19BA is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$18.29
$18.29
10
$17.07
$170.70
25
$16.21
$405.25
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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