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SPB10N10L G

SPB10N10L G
Mfr. #:
SPB10N10L G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 100V 10.3A D2PAK-2
Lifecycle:
New from this manufacturer.
Datasheet:
SPB10N10L G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SPB10N10L G DatasheetSPB10N10L G Datasheet (P4-P6)SPB10N10L G Datasheet (P7-P8)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
10.3 A
Rds On - Drain-Source Resistance:
154 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
50 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Transistor Type:
1 N-Channel
Width:
9.25 mm
Brand:
Infineon Technologies
Fall Time:
17.8 ns
Product Type:
MOSFET
Rise Time:
19.1 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
27.8 ns
Typical Turn-On Delay Time:
4.6 ns
Part # Aliases:
SPB10N10LGXT
Unit Weight:
0.139332 oz
Tags
SPB10N10L, SPB10N1, SPB10N, SPB10, SPB1, SPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
SPB10N10L G
DISTI # SPB10N10LGINTR-ND		Infineon Technologies AGMOSFET N-CH 100V 10.3A TO-263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    SPB10N10L G
    DISTI # SPB10N10LGINCT-ND    		Infineon Technologies AGMOSFET N-CH 100V 10.3A TO-263
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SPB10N10L G
      DISTI # SPB10N10LGINDKR-ND      		Infineon Technologies AGMOSFET N-CH 100V 10.3A TO-263
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SPB10N10L G
        DISTI # SPB10N10LG        		Infineon Technologies AGTrans MOSFET N-CH 100V 10.3A 3-Pin(2+Tab) TO-263 - Bulk (Alt: SPB10N10LG)
        RoHS: Not Compliant
        Min Qty: 863
        Container: Bulk        		Americas - 0
        • 8630:$0.3679
        • 4315:$0.3749
        • 2589:$0.3879
        • 1726:$0.4019
        • 863:$0.4169
        SPB10N10L G
        DISTI # 726-SPB10N10LG        		Infineon Technologies AGMOSFET N-Ch 100V 10.3A D2PAK-2
        RoHS: Compliant        		0
          SPB10N10LGInfineon Technologies AGPower Field-Effect Transistor, 10.3A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          RoHS: Compliant          		993
          • 1000:$0.3800
          • 500:$0.4000
          • 100:$0.4200
          • 25:$0.4400
          • 1:$0.4700
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          Availability
          Stock:
          Available
          On Order:
          4500
          Enter Quantity:
          Current price of SPB10N10L G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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