FQA11N90C-F109

FQA11N90C-F109
Mfr. #:
FQA11N90C-F109
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 900V N-Ch Q-FET advance C-Series
Lifecycle:
New from this manufacturer.
Datasheet:
FQA11N90C-F109 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-3PN-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
900 V
Id - Continuous Drain Current:
11 A
Rds On - Drain-Source Resistance:
1.4 Ohms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
300 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
QFET
Packaging:
Tube
Height:
20.1 mm
Length:
16.2 mm
Series:
FQA11N90C_F109
Transistor Type:
1 N-Channel
Width:
5 mm
Brand:
ON Semiconductor / Fairchild
Fall Time:
85 ns
Product Type:
MOSFET
Rise Time:
130 ns
Factory Pack Quantity:
450
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
130 ns
Typical Turn-On Delay Time:
60 ns
Part # Aliases:
FQA11N90C_F109
Unit Weight:
0.225789 oz
Tags
FQA11N90C-F, FQA11N90C, FQA11N, FQA11, FQA1, FQA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Transistor, N Channel, 11 A, 900 V, 0.91 ohm, 10 V, 5 V
***Components
N-Channel MOSFET, 11 A, 900 V, 3-Pin TO-3PN ON Semiconductor FQA11N90C-F109
***Semiconductor
N-Channel Power MOSFET, QFET®, 900 V, 11.0 A, 1.1 Ω, TO-3P
***et Europe
Trans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3P(N) Rail
***p One Stop Global
Trans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3PN Tube
***ure Electronics
N-Channel 900 V 1.1 Ohm Through Hole Mosfet - TO-3P
***an P&S
900V,1.1Ω,11.0A,N-Ch QFET MOSFET
***inecomponents.com
900V N-Channel MOSFET
***i-Key
MOSFET N-CH 900V 11A TO-3P
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 900V, 11A, TO-3PN-3; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.91ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:300W; Transistor Case Style:TO-3PN; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, CANALE N, 900V, 11A, TO-3PN-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:11A; Tensione Drain Source Vds:900V; Resistenza di Attivazione Rds(on):0.91ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:5V; Dissipazione di Potenza Pd:300W; Modello Case Transistor:TO-3PN; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
Part # Mfg. Description Stock Price
FQA11N90C_F109
DISTI # 33111446
ON Semiconductor900V N-CHANNEL MOSFET QFET&#17805
  • 500:$1.5485
  • 250:$1.5910
  • 100:$1.6358
  • 50:$1.6832
  • 25:$1.7334
  • 7:$1.7868
FQA11N90C_F109
DISTI # V36:1790_06359081
ON Semiconductor900V N-CHANNEL MOSFET QFET&#170
  • 450000:$1.5820
  • 225000:$1.5870
  • 45000:$2.1510
  • 4500:$3.2820
  • 450:$3.4790
FQA11N90C_F109
DISTI # FQA11N90C-F109
ON SemiconductorTrans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FQA11N90C-F109)
RoHS: Compliant
Min Qty: 450
Asia - 450
  • 22500:$1.7577
  • 11250:$1.7875
  • 4500:$1.8183
  • 2250:$1.8832
  • 1350:$1.9530
  • 900:$2.0281
  • 450:$2.1092
FQA11N90C_F109
DISTI # FQA11N90C-F109
ON SemiconductorTrans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FQA11N90C-F109)
RoHS: Compliant
Min Qty: 1
Europe - 300
  • 1000:€1.2900
  • 500:€1.3900
  • 100:€1.4900
  • 25:€1.5900
  • 50:€1.5900
  • 10:€1.6900
  • 1:€1.8900
FQA11N90C_F109
DISTI # FQA11N90C-F109
ON SemiconductorTrans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3P(N) Rail - Bulk (Alt: FQA11N90C-F109)
Min Qty: 149
Container: Bulk
Americas - 0
  • 1490:$1.9900
  • 149:$2.0900
  • 298:$2.0900
  • 447:$2.0900
  • 745:$2.0900
FQA11N90C_F109
DISTI # FQA11N90C-F109
ON SemiconductorTrans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FQA11N90C-F109)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 900:$1.5900
  • 1800:$1.5900
  • 2700:$1.5900
  • 4500:$1.5900
  • 450:$1.6900
FQA11N90C-F109
DISTI # 48AC1154
ON SemiconductorQFC 900V 1.1OHM TO3PN / TUBE0
  • 1000:$2.7000
  • 500:$2.8700
  • 250:$3.0800
  • 100:$3.3400
  • 1:$4.0600
FQA11N90C-F109
DISTI # 512-FQA11N90C_F109
ON SemiconductorMOSFET 900V N-Ch Q-FET advance C-Series
RoHS: Compliant
569
  • 1:$3.9300
  • 10:$3.3400
  • 100:$2.9000
  • 250:$2.7500
  • 500:$2.4700
FQA11N90C-F109ON SemiconductorPower Field-Effect Transistor, 11A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Not Compliant
900
  • 1000:$1.9100
  • 500:$2.0100
  • 100:$2.0900
  • 25:$2.1800
  • 1:$2.3500
FQA11N90C-F109Fairchild Semiconductor CorporationPower Field-Effect Transistor, 11A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Not Compliant
300
  • 1000:$1.9100
  • 500:$2.0100
  • 100:$2.0900
  • 25:$2.1800
  • 1:$2.3500
FQA11N90C-F109
DISTI # 6714890
ON SemiconductorMOSFET N-CHANNEL 900V 11A TO-3P(N), EA66
  • 15:£2.4600
  • 6:£2.5100
  • 1:£3.8500
FQA11N90C_F109
DISTI # FQA11N90C-F109
ON SemiconductorTransistor: N-MOSFET,unipolar,900V,6.9A,300W,TO3PN120
  • 30:$2.3700
  • 10:$2.6400
  • 3:$3.2900
  • 1:$3.8100
FQA11N90C-F109ON Semiconductor900V,1.1,11.0A,N-Ch QFET MOSFET450
  • 1:$5.0300
  • 100:$3.2100
  • 500:$2.6500
  • 1000:$2.4400
FQA11N90C-F109
DISTI # 2453882
ON SemiconductorMOSFET, N-CH, 900V, 11A, TO-3PN-3
RoHS: Compliant
0
  • 500:$3.8000
  • 250:$4.2300
  • 100:$4.4600
  • 10:$5.1400
  • 1:$6.0400
FQA11N90C-F109
DISTI # XSKDRABV0037738
ON SEMICONDUCTOR 
RoHS: Compliant
360 in Stock0 on Order
  • 360:$2.2400
  • 208:$2.4000
FQA11N90C-F109
DISTI # XSFP00000101402
Fairchild Semiconductor CorporationLowSkewClockDriver,2DLSeries,4TrueOutput(s),0InvertedOutput(s),PDSO20
RoHS: Compliant
120 in Stock0 on Order
  • 120:$2.4000
  • 60:$2.5700
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Availability
Stock:
235
On Order:
2218
Enter Quantity:
Current price of FQA11N90C-F109 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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