PartNumber | FQA10N80C-F109 | FQA10N60C | FQA10N80 |
Description | MOSFET 800V N-Ch QFET Advance | MOSFET N-CH/600V/10A/QFET | MOSFET 800V N-Channel QFET |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-3PN-3 | TO-3PN-3 | TO-3PN-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 800 V | 600 V | 800 V |
Id Continuous Drain Current | 10 A | 10 A | 9.8 A |
Rds On Drain Source Resistance | 1.1 Ohms | 730 mOhms | 1.05 Ohms |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 240 W | 192 W | 240 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | QFET | - | - |
Packaging | Tube | Tube | Tube |
Height | 20.1 mm | 20.1 mm | 20.1 mm |
Length | 16.2 mm | 16.2 mm | 16.2 mm |
Series | FQA10N80C_F109 | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 5 mm | 5 mm | 5 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Fall Time | 80 ns | 77 ns | 75 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 130 ns | 69 ns | 115 ns |
Factory Pack Quantity | 450 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 90 ns | 144 ns | 125 ns |
Typical Turn On Delay Time | 50 ns | 23 ns | 45 ns |
Part # Aliases | FQA10N80C_F109 | FQA10N60C_NL | FQA10N80_NL |
Unit Weight | 0.225789 oz | 0.000194 oz | 0.000198 oz |
Type | - | MOSFET | MOSFET |
Forward Transconductance Min | - | 8 S | 10 S |