PartNumber | FQA19N20C | FQA19N20L | FQA19N60 |
Description | MOSFET 200V N-Channel Advance Q-FET | MOSFET 200V N-Ch QFET Logic Level | MOSFET 600V N-CH QFET |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-3PN-3 | TO-3PN-3 | TO-3PN-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 200 V | 200 V | 600 V |
Id Continuous Drain Current | 21.8 A | 25 A | 18.5 A |
Rds On Drain Source Resistance | 170 mOhms | 140 mOhms | 380 mOhms |
Vgs Gate Source Voltage | 30 V | 20 V | 30 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 180 W | 190 W | 300 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Height | 20.1 mm | 20.1 mm | 20.1 mm |
Length | 16.2 mm | 16.2 mm | 16.2 mm |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | MOSFET | MOSFET | MOSFET |
Width | 5 mm | 5 mm | 5 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Forward Transconductance Min | 10.8 S | 20 S | 16 S |
Fall Time | 115 ns | 180 ns | 135 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 150 ns | 300 ns | 210 ns |
Factory Pack Quantity | 30 | 30 | 450 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 135 ns | 130 ns | 150 ns |
Typical Turn On Delay Time | 15 ns | 35 ns | 65 ns |
Part # Aliases | FQA19N20C_NL | - | FQA19N60_NL |
Unit Weight | 0.000198 oz | 0.000198 oz | 0.225789 oz |
Tradename | - | - | QFET |
Series | - | - | FQA19N60 |