FDFME3N311ZT

Mfr. #:: FDFME3N311ZT
Manufacturer:: ON Semiconductor
Description:: MOSFET N-CH 30V 1.8A 6MICROFET
Lifecycle:: New from this manufacturer.
Datasheet:: FDFME3N311ZT Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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Product Attribute
Attribute Value

Manufacturer: FAIRCHILD

Product Category: FETs - Single

Packaging: Reel

Unit-Weight: 0.000889 oz

Mounting-Style: SMD/SMT

Package-Case: microFET-6

Technology: Si

Number-of-Channels: 1 Channel

Configuration: Single with Schottky Diode

Transistor-Type: 1 N-Channel

Pd-Power-Dissipation: 1.1 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 2.8 ns

Rise-Time: 16 ns

Vgs-Gate-Source-Voltage: 12 V

Id-Continuous-Drain-Current: 1.6 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Rds-On-Drain-Source-Resistance: 299 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 35 ns

Typical-Turn-On-Delay-Time: 12 ns

Forward-Transconductance-Min: 2.8 S

Channel-Mode: Enhancement

Tags: FDFME, FDFM, FDF

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FDFME3N311ZT Description

***Semiconductor: Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30 V, 1.8 A, 299 mΩ

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.299ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:0.5W ;RoHS Compliant: Yes

***rchild Semiconductor: This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and on-state resistance. An independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency.The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.

Market price

Part #	Mfg.	Description	Stock	Price
FDFME3N311ZT DISTI # FDFME3N311ZTTR-ND	ON Semiconductor	MOSFET N-CH 30V 1.8A 6MICROFET RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Limited Supply - Call	5000:$0.2525
FDFME3N311ZT DISTI # FDFME3N311ZTCT-ND	ON Semiconductor	MOSFET N-CH 30V 1.8A 6MICROFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDFME3N311ZT DISTI # FDFME3N311ZTDKR-ND	ON Semiconductor	MOSFET N-CH 30V 1.8A 6MICROFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDFME3N311ZT DISTI # FDFME3N311ZT	ON Semiconductor	Trans MOSFET N-CH 30V 1.8A 6-Pin MicroFET T/R (Alt: FDFME3N311ZT) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	5000:€0.4469 10000:€0.3479 20000:€0.2889 30000:€0.2429 50000:€0.2249
FDFME3N311ZT DISTI # 73R3644	ON Semiconductor	MOSFET Transistor,Transistor Polarity:N Channel,Continuous Drain Current Id:1.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.299ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,Power Dissipation Pd:500mW RoHS Compliant: Yes	0	1:$0.6400 25:$0.5270 50:$0.4340 100:$0.3400 250:$0.3170 500:$0.2950 1000:$0.2720
FDFME3N311ZT DISTI # 64R3000	ON Semiconductor	MOSFET Transistor, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:1.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.299ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,No. of Pins:6Pins RoHS Compliant: Yes	0	1:$0.2860 5000:$0.2840 10000:$0.2500 25000:$0.2250 50000:$0.2130
FDFME3N311ZT	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 1.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	60662	1000:$0.2500 500:$0.2600 100:$0.2700 25:$0.2900 1:$0.3100
FDFME3N311ZT DISTI # 1813536	ON Semiconductor	MOSFET Transistor RoHS: Compliant	0	5000:£0.2410
FDFME3N311ZT DISTI # 1813536	ON Semiconductor	MOSFET Transistor RoHS: Compliant	0	5000:$0.9780

FDFME3N311ZT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes