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SCT3022KLGC11

SCT3022KLGC11
Mfr. #:
SCT3022KLGC11
Manufacturer:
Rohm Semiconductor
Description:
SCT3022KL IS AN SIC (SILICON CAR
Lifecycle:
New from this manufacturer.
Datasheet:
SCT3022KLGC11 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SCT3022KLGC11 more Information
Product Attribute
Attribute Value
Tags
SCT3022K, SCT302, SCT30, SCT3, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH SiC 1.2KV 95A 3-Pin(3+Tab) TO-247N Tube
***ment14 APAC
MOSFET, N-CH, 1.2KV, 95A, 175DEG C, 427W
***ronik
SiC-N 1200V 95A 22mOhm TO-247N
***ukat
SiC-N-Ch 1200V 95A 427W 0,0286R TO247
***i-Key
SCT3022KL IS AN SIC (SILICON CAR
***ark
Mosfet, N-Ch, 1.2Kv, 95A, 175Deg C, 427W; Transistor Polarity:n Channel; Continuous Drain Current Id:95A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.022Ohm; Rds(On) Test Voltage Vgs:18V; Threshold Voltage Vgs:5.6V; Powerrohs Compliant: Yes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SCT3x 3rd Generation SiC Trench MOSFETs
ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
Part # Mfg. Description Stock Price
SCT3022KLGC11
DISTI # SCT3022KLGC11-ND		ROHM SemiconductorSCT3022KL IS AN SIC (SILICON CAR
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 25:$94.9840
  • 10:$97.6410
  • 1:$102.9500
SCT3022KLGC11
DISTI # 81AC5491		ROHM SemiconductorMOSFET, N-CH, 1.2KV, 95A, 175DEG C, 427W,Transistor Polarity:N Channel,Continuous Drain Current Id:95A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.022ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V,PowerRoHS Compliant: Yes0
  • 100:$90.5700
  • 50:$93.9100
  • 25:$97.2600
  • 10:$100.6200
  • 5:$105.3600
  • 1:$107.3300
SCT3022KLGC11
DISTI # 755-SCT3022KLGC11		ROHM SemiconductorMOSFET Nch 1200V 95A SiC TO-247N
RoHS: Compliant		0
  • 1:$106.2700
  • 5:$104.3200
  • 10:$99.6200
  • 25:$96.3000
SCT3022KLGC11
DISTI # TMOS1630		ROHM SemiconductorSiC-N 1200V 95A 22mOhm TO-247N
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 450:$167.6700
SCT3022KLGC11
DISTI # SCT3022KLGC11		ROHM SemiconductorSiC-N-Ch 1200V 95A 427W 0,0286R TO247
RoHS: Compliant		17
  • 1:€115.6500
  • 5:€105.6500
  • 10:€100.6500
  • 30:€97.1500
SCT3022KLGC11
DISTI # 2947065		ROHM SemiconductorMOSFET, N-CH, 1.2KV, 95A, 175DEG C, 427W0
  • 10:£71.5500
  • 5:£76.4200
  • 1:£77.8400
SCT3022KLGC11ROHM SemiconductorMOSFET Nch 1200V 95A SiC TO-247N
RoHS: Compliant		Americas -
    SCT3022KLGC11
    DISTI # 2947065    		ROHM SemiconductorMOSFET, N-CH, 1.2KV, 95A, 175DEG C, 427W
    RoHS: Compliant    		0
    • 10:$198.0000
    • 5:$202.9900
    • 1:$206.3200
    Image Part # Description
    SCT3022KLGC11

    Mfr.#: SCT3022KLGC11

    OMO.#: OMO-SCT3022KLGC11

    		 MOSFET Nch 1200V 95A SiC TO-247N
    SCT3022ALHRC11

    Mfr.#: SCT3022ALHRC11

    OMO.#: OMO-SCT3022ALHRC11

    		 MOSFET 650V 93A 339W SIC 22mOhm TO-247N
    SCT3022KLHRC11

    Mfr.#: SCT3022KLHRC11

    OMO.#: OMO-SCT3022KLHRC11

    		 MOSFET 1200V 95A 427W SIC 22mOhm TO-247N
    SCT3022ALGC11

    Mfr.#: SCT3022ALGC11

    OMO.#: OMO-SCT3022ALGC11

    		 MOSFET N-Ch 650V SiC 93A 22mOhm TrenchMOS
    SCT3022KLGC11

    Mfr.#: SCT3022KLGC11

    OMO.#: OMO-SCT3022KLGC11-ROHM-SEMI

    		 SCT3022KL IS AN SIC (SILICON CAR
    SCT3022ALGC11

    Mfr.#: SCT3022ALGC11

    OMO.#: OMO-SCT3022ALGC11-ROHM-SEMI

    		 MOSFET NCH 650V 93A TO247N
    SCT3022KL

    Mfr.#: SCT3022KL

    OMO.#: OMO-SCT3022KL-1190

    		 New and Original
    SCT3022ALHRC11

    Mfr.#: SCT3022ALHRC11

    OMO.#: OMO-SCT3022ALHRC11-ROHM-SEMI

    		 AUTOMOTIVE GRADE N-CHANNEL SIC P
    SCT3022KLHRC11

    Mfr.#: SCT3022KLHRC11

    OMO.#: OMO-SCT3022KLHRC11-ROHM-SEMI

    		 AUTOMOTIVE GRADE N-CHANNEL SIC P
    Availability
    Stock:
    Available
    On Order:
    4000
    Enter Quantity:
    Current price of SCT3022KLGC11 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $133.65
    $133.65
    10
    $126.97
    $1 269.68
    100
    $120.28
    $12 028.50
    500
    $113.60
    $56 801.25
    1000
    $106.92
    $106 920.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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