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FCI7N60

FCI7N60
Mfr. #:
FCI7N60
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET HIGH POWER
Lifecycle:
New from this manufacturer.
Datasheet:
FCI7N60 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-262-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
7 A
Rds On - Drain-Source Resistance:
600 mOhms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
83 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
SuperFET
Packaging:
Tube
Height:
7.88 mm
Length:
10.29 mm
Series:
FCI7N60
Transistor Type:
1 N-Channel
Width:
4.83 mm
Brand:
ON Semiconductor / Fairchild
Fall Time:
32 ns
Product Type:
MOSFET
Rise Time:
55 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
75 ns
Typical Turn-On Delay Time:
35 ns
Unit Weight:
0.073511 oz
Tags
FCI7, FCI
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, I2PAK
***ure Electronics
Single N-Channel 600 V 0.6 Ohm 30 nC 83 W Silicon Through Hole Mosfet - TO-262
***ical
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) I2PAK Rail
***o-Tech
MOSFET N-Channel 600V 7A SuperFET I2PAK
***i-Key
MOSFET N-CH 600V 7A I2PAK
***eco
TEW CREATED FOR SUZHOU <AZ
***ser
IGBTs HIGH_POWER
***ark
MOSFET, N CH, 600V, 7A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; No. of Pins:3 ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N CH, 600V, 7A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-262; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Part # Mfg. Description Stock Price
FCI7N60
DISTI # 33134434		ON SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) I2PAK Tube1000
  • 1000:$0.9232
FCI7N60
DISTI # FCI7N60-ND		ON SemiconductorMOSFET N-CH 600V 7A I2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$0.9232
FCI7N60
DISTI # V36:1790_06359887		ON SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) I2PAK Tube0
  • 1000000:$0.7350
  • 500000:$0.7354
  • 100000:$0.7915
  • 10000:$0.9037
  • 1000:$0.9232
FCI7N60
DISTI # FCI7N60		ON SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) I2PAK Rail - Rail/Tube (Alt: FCI7N60)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$0.7479
  • 5000:$0.7669
  • 3000:$0.7769
  • 2000:$0.7869
  • 1000:$0.7919
FCI7N60
DISTI # FCI7N60		ON SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) I2PAK Rail - Bulk (Alt: FCI7N60)
RoHS: Compliant
Min Qty: 348
Container: Bulk		Americas - 0
  • 3480:$0.8879
  • 1740:$0.9109
  • 1044:$0.9229
  • 696:$0.9349
  • 348:$0.9409
FCI7N60
DISTI # FCI7N60		ON SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) I2PAK Rail (Alt: FCI7N60)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.7979
  • 500:€0.8109
  • 100:€0.8229
  • 50:€0.8359
  • 25:€0.9209
  • 10:€1.0779
  • 1:€1.3179
FCI7N60
DISTI # 512-FCI7N60		ON SemiconductorMOSFET HIGH POWER
RoHS: Compliant		2994
  • 1:$1.7800
  • 10:$1.5100
  • 100:$1.2100
  • 500:$1.0600
  • 1000:$0.8790
  • 2000:$0.8660
FCI7N60Fairchild Semiconductor CorporationPower Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		398
  • 1000:$0.8800
  • 500:$0.9300
  • 100:$0.9700
  • 25:$1.0100
  • 1:$1.0900
FCI7N60Fairchild Semiconductor CorporationPower Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		200
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    Availability
    Stock:
    Available
    On Order:
    1985
    Enter Quantity:
    Current price of FCI7N60 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.78
    $1.78
    10
    $1.51
    $15.10
    100
    $1.21
    $121.00
    500
    $1.06
    $530.00
    1000
    $0.88
    $879.00
    2000
    $0.87
    $1 732.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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