ZXTDA1M832TA

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

Bipolar Transistors - BJT

RoHS:

T

Mounting Style:

SMD/SMT

Package / Case:

MLP-832-8

Transistor Polarity:

NPN, PNP

Configuration:

Dual

Collector- Emitter Voltage VCEO Max:

15 V, 12 V

Collector- Base Voltage VCBO:

40 V, 20 V

Emitter- Base Voltage VEBO:

7.5 V

Collector-Emitter Saturation Voltage:

240 mV

Maximum DC Collector Current:

5 A, 4.4 A

Gain Bandwidth Product fT:

110 MHz, 120 MHz

Maximum Operating Temperature:

+ 150 C

DC Current Gain hFE Max:

200

Height:

1 mm

Length:

3 mm

Packaging:

Reel

Width:

2 mm

Brand:

Diodes Incorporated

Continuous Collector Current:

4.5 A, - 4 A

DC Collector/Base Gain hfe Min:

200 at 10 mA, 2 V at NPN, 300 at 200 mA, 2 V at NPN, 200 at 3 A, 2 V at NPN, 150 at 5 A, 2 V at NPN, 300 at 10 mA, 2 V at PNP, 300 at 100 mA, 2 V at PNP, 180 at 2.5 A, 2 V at PNP, 60 at 8 A, 2 V at PNP, 45 at 10 A, 2 V at PNP

Pd - Power Dissipation:

1.5 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

3000

Subcategory:

Transistors

Tags

ZXTDA1M, ZXTDA1, ZXTDA, ZXTD, ZXT