DF23MR12W1M1B11BOMA1

Mfr. #:: DF23MR12W1M1B11BOMA1
Manufacturer:: Infineon Technologies
Description:: Discrete Semiconductor Modules
Lifecycle:: New from this manufacturer.
Datasheet:: DF23MR12W1M1B11BOMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: Discrete Semiconductor Modules

RoHS:: Y

Product:: Power MOSFET Modules

Type:: SiC Power MOSFET

Vf - Forward Voltage:: 4 V

Vgs - Gate-Source Voltage:: - 10 V, 20 V

Mounting Style:: Press Fit

Package / Case:: Easy1B-2

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Packaging:: Tray

Configuration:: Dual

Brand:: Infineon Technologies

Transistor Polarity:: N-Channel

Fall Time:: 13 ns

Id - Continuous Drain Current:: 25 A

Operating Supply Voltage:: -

Pd - Power Dissipation:: 20 mW

Product Type:: Discrete Semiconductor Modules

Rds On - Drain-Source Resistance:: 45 mOhms

Rise Time:: 7.2 ns

Factory Pack Quantity:: 24

Subcategory:: Discrete Semiconductor Modules

Tradename:: CoolSIC

Typical Turn-Off Delay Time:: 38.5 ns

Typical Turn-On Delay Time:: 11.5 ns

Vds - Drain-Source Breakdown Voltage:: 1200 V

Vgs th - Gate-Source Threshold Voltage:: 3.5 V

Part # Aliases:: DF23MR12W1M1_B11 SP001602244

Tags: DF23, DF2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DF23MR12W1M1B11BOMA1 Description

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0201 6.0pF 50volts C0G +/-0.5pF

***ure Electronics: N-Channel 1200 V 45 mOhm CoolSiC EasyPACK PressFIT/NTC Trench Mosfet Module

***ark: Mosfet Module, N-Ch, 1.2Kv, 30A; Transistor Polarity:n Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.045Ohm; Rds(On) Test Voltage Vgs:-; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes

***ineon: Easy 1B 1200 V / 23 m booster module with CoolSiC MOSFET, NTC and PressFIT Contact Technology | Summary of Features: High current density; Best in class switching and conduction losses; Low inductive design; Integrated NTC temperature sensor; PressFIT contact technology; RoHS-compliant modules | Benefits: Highest efficiency for reduced cooling effort; Higher frequency operation; Increased power density; Optimized customers development cycle time and cost | Target Applications: drives; solar; ups; battery-charger

Market price

Part #	Mfg.	Description	Stock	Price
DF23MR12W1M1B11BOMA1 DISTI # V99:2348_18205128	Infineon Technologies AG	Trans MOSFET N-CH SiC 1.2KV 30A 22-Pin Tray	10	100:$81.4500 25:$85.9400 10:$89.0699 5:$94.1700 1:$96.8900
DF23MR12W1M1B11BOMA1 DISTI # DF23MR12W1M1B11BOMA1-ND	Infineon Technologies AG	MOSFET MODULE 1200V 25A RoHS: Compliant Min Qty: 24 Container: Tray	Limited Supply - Call
DF23MR12W1M1B11BOMA1 DISTI # 32135610	Infineon Technologies AG	Trans MOSFET N-CH SiC 1.2KV 30A 22-Pin Tray	10	1:$96.8900
DF23MR12W1M1B11BOMA1 DISTI # 33AC0629	Infineon Technologies AG	MOSFET MODULE, N-CH, 1.2KV, 30A,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.045ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:4.5V,Power RoHS Compliant: Yes	0	10:$91.0300 5:$95.3200 1:$97.1000
DF23MR12W1M1B11BOMA1 DISTI # 726-DF23MR12W1M1B11	Infineon Technologies AG	Discrete Semiconductor Modules RoHS: Compliant	24	1:$97.1000 5:$95.3200 10:$91.0300 25:$88.0000 50:$87.9900
DF23MR12W1M1B11BOMA1 DISTI # 2778389	Infineon Technologies AG	MOSFET MODULE, N-CH, 1.2KV, 30A RoHS: Compliant	2	1:£47.3900
DF23MR12W1M1B11BOMA1 DISTI # 2778389	Infineon Technologies AG	MOSFET MODULE, N-CH, 1.2KV, 30A RoHS: Compliant	2	50:$134.2700 10:$138.9000 5:$143.8600 1:$149.1900

Image	Part #	Description
	Mfr.#: DF23MR12W1M1B11BPSA1 OMO.#: OMO-DF23MR12W1M1B11BPSA1	Discrete Semiconductor Modules
	Mfr.#: DF23MR12W1M1B11BOMA1 OMO.#: OMO-DF23MR12W1M1B11BOMA1	Discrete Semiconductor Modules
	Mfr.#: DF23MR12W1M1B11BPSA1 OMO.#: OMO-DF23MR12W1M1B11BPSA1-INFINEON-TECHNOLOGIES	MOSFET MOD 1200V 25A
	Mfr.#: DF23MR12W1M1B11BOMA1 OMO.#: OMO-DF23MR12W1M1B11BOMA1-INFINEON-TECHNOLOGIES	Trans MOSFET N-CH SiC 1.2KV 30A 22-Pin Tray

DF23MR12W1M1B11BOMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes