CSD23201W10

Mfr. #:: CSD23201W10
Description:: MOSFET P-Ch NexFET Power MOSFETs
Lifecycle:: New from this manufacturer.
Datasheet:: CSD23201W10 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: CSD23201W10 more Information CSD23201W10 Product Details

Product Attribute
Attribute Value

Manufacturer:: Texas Instruments

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: DSBGA-4

Number of Channels:: 1 Channel

Transistor Polarity:: P-Channel

Vds - Drain-Source Breakdown Voltage:: 12 V

Id - Continuous Drain Current:: 2.2 A

Rds On - Drain-Source Resistance:: 82 mOhms

Vgs - Gate-Source Voltage:: 6 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 1000 mW

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: NexFET

Packaging:: Reel

Height:: 0.62 mm

Length:: 1 mm

Series:: CSD23201W10

Transistor Type:: 1 P-Channel

Width:: 1 mm

Brand:: Texas Instruments

Fall Time:: 29 ns

Product Type:: MOSFET

Rise Time:: 19 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 68 ns

Typical Turn-On Delay Time:: 24 ns

Tags: CSD2320, CSD232, CSD23, CSD2, CSD

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Vacuum Packaging with PL

Step2:
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Step3:
Packaging Boxes

CSD23201W10 Description

***as Instruments: P-Channel NexFET Power MOSFET 4-DSBGA -55 to 150

***ark: P CHANNEL MOSFET, NEXFET, -12V, -2.2A, DSBGA-4

***et Europe: Trans MOSFET P-CH 12V 2.2A 4-Pin WLCSP T/R

***i-Key: MOSFET P-CH 12V 2.2A 4DSBGA

***th Star Micro: the device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

***ment14 APAC: Prices include import duty and tax. FET, P CH, SINGLE, 12V, 4DSBGA; Transistor Polarity:P Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.066ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:600mV; Power Dissipation Pd:1W; Transistor Case Style:DSBGA; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:-2.2A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:12V; Voltage Vgs Max:-6V; Voltage Vgs Rds on Measurement:4.5V

***nell: FET, P CH, SINGOLO, 12V, 4DSBGA; Polarità Transistor:Canale P; Corrente Continua di Drain Id:1.1A; Tensione Drain Source Vds:-12V; Resistenza di Attivazione Rds(on):0.066ohm; Tensione Vgs di Misura Rds(on):-4.5V; Tensione di Soglia Vgs:600mV; Dissipazione di Potenza Pd:1W; Modello Case Transistor:DSBGA; No. di Pin:4Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:-2.2A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C; Tensione Vds Tipica:12V; Tensione Vgs Max:-6V; Tensione Vgs di Misurazione Rds on:4.5V; Tipo di Terminazione:Dispositivo a Montaggio Superficiale; Tipo di Transistor:Power MOSFET

Market price

Part #	Description	Stock	Price
CSD23201W10 DISTI # 296-24258-2-ND	MOSFET P-CH 12V 2.2A 4DSBGA RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
CSD23201W10 DISTI # 296-24258-1-ND	MOSFET P-CH 12V 2.2A 4DSBGA RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
CSD23201W10 DISTI # 296-24258-6-ND	MOSFET P-CH 12V 2.2A 4DSBGA RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
CSD23201W10 DISTI # CSD23201W10	Trans MOSFET P-CH 12V 2.2A 4-Pin WLCSP T/R (Alt: CSD23201W10) RoHS: Compliant Min Qty: 1250	Americas - 0	1250:$0.2899 1252:$0.2759 2502:$0.2669 6250:$0.2579 12500:$0.2499
CSD23201W10 DISTI # 595-CSD23201W10	MOSFET P-Ch NexFET Power MOSFETs RoHS: Compliant	0
CSD23201W10	Small Signal Field-Effect Transistor, 2.2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	459193	1000:$0.2900 500:$0.3100 100:$0.3200 25:$0.3400 1:$0.3600
CSD23201W10	2200 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	240	57:$0.6300 12:$0.9000 1:$1.8000
CSD23201W10 DISTI # 1710777RL	FET, P CH, SINGLE, 12V, 4DSBGA RoHS: Compliant	0	1:$1.0300 10:$0.8950 100:$0.7300 500:$0.6170 1000:$0.5440 3000:$0.4870 9000:$0.4210 24000:$0.4150
CSD23201W10 DISTI # 1710777	FET, P CH, SINGLE, 12V, 4DSBGA RoHS: Compliant	0	1:$1.0300 10:$0.8950 100:$0.7300 500:$0.6170 1000:$0.5440 3000:$0.4870 9000:$0.4210 24000:$0.4150

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CSD23201W10

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes