SI5902BDC-T1-GE3

Mfr. #:: SI5902BDC-T1-GE3
Manufacturer:: Vishay
Description:: MOSFET 2N-CH 30V 4A 1206-8
Lifecycle:: New from this manufacturer.
Datasheet:: SI5902BDC-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: SI5902BDC-T1-GE3 more Information

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Tags: SI5902B, SI5902, SI590, SI59, SI5

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SI5902BDC-T1-GE3 Description

***ied Electronics & Automation: SI5902BDC-T1-GE3 Dual N-channel MOSFET Transistor; 3.7 A; 30V; 8-Pin 1206 ChipFET

***ure Electronics: Dual N-Channel 30 V 0.065 O 7 nC Surface Mount Mosfet - ChipFET-1206-8

***nell: MOSFET, DUAL, N-CH, 30V, 4A, 1206-8

***et Europe: Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R

***i-Key: MOSFET 2N-CH 30V 4A 1206-8

***Components: TRANS MOSFET N-CH 30V 3.7A

***ronik: DUAL 30V 4A 65mOhm ChipFET

***: DUAL N-CH 30V (D-S)

***ark: Transistor Polarity:dual N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.053Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:3.12W; No. Of Pins:8Pins Rohs Compliant: No

***ment14 APAC: Prices include import duty and tax. MOSFET, DUAL, N-CH, 30V, 4A, 1206-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.053ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:3.12W; Transistor Case Style:ChipFET; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015)

SI5902BDC-T1-GE3 More Information

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

Part #	Mfg.	Description	Stock	Price
SI5902BDC-T1-GE3 DISTI # V72:2272_09216238	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R RoHS: Compliant	2793	1000:$0.5570 500:$0.6838 250:$0.8017 100:$0.8347 25:$0.9731 10:$1.0812 1:$1.4362
SI5902BDC-T1-GE3 DISTI # V36:1790_09216238	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R RoHS: Compliant	0	3000:$0.5181
SI5902BDC-T1-GE3 DISTI # SI5902BDC-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 30V 4A 1206-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9551In Stock	1000:$0.6165 500:$0.7808 100:$0.9452 10:$1.2120 1:$1.3600
SI5902BDC-T1-GE3 DISTI # SI5902BDC-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 4A 1206-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9551In Stock	1000:$0.6165 500:$0.7808 100:$0.9452 10:$1.2120 1:$1.3600
SI5902BDC-T1-GE3 DISTI # SI5902BDC-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 4A 1206-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	15000:$0.5107 6000:$0.5307 3000:$0.5586
SI5902BDC-T1-GE3 DISTI # 33635116	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R RoHS: Compliant	2793	14:$1.4362
SI5902BDC-T1-GE3 DISTI # SI5902BDC-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R - Tape and Reel (Alt: SI5902BDC-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.4872 18000:$0.5007 12000:$0.5149 6000:$0.5367 3000:$0.5531
SI5902BDC-T1-GE3 DISTI # SI5902BDC-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R (Alt: SI5902BDC-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI5902BDC-T1-GE3 DISTI # 04X9765	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R - Product that comes on tape, but is not reeled (Alt: 04X9765) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1000:$0.7130 500:$0.9040 250:$0.9780 100:$1.0500 50:$1.2100 25:$1.3800 1:$1.6600
SI5902BDC-T1-GE3 DISTI # 86R3904	Vishay Intertechnologies	MOSFET, DUAL N-CH, 30V, 4A, CHIPFET-8, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.053ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes	0	10000:$0.4830 6000:$0.4940 4000:$0.5130 2000:$0.5700 1000:$0.6270 1:$0.6540
SI5902BDC-T1-GE3 DISTI # 04X9765	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 30V, 4A, CHIPFET-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.053ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	1458	1:$0.4470 25:$0.4470 50:$0.4470 100:$0.4470 250:$0.4470 500:$0.4470 1000:$0.4470
SI5902BDC-T1-GE3. DISTI # 15AC0301	Vishay Intertechnologies	Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.053ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:3.12W,No. of Pins:8Pins RoHS Compliant: No	0	10000:$0.4830 6000:$0.4940 4000:$0.5130 2000:$0.5700 1000:$0.6270 1:$0.6540
SI5902BDC-T1-GE3 DISTI # 70616989	Vishay Siliconix	SI5902BDC-T1-GE3 Dual N-channel MOSFET Transistor,3.7 A,30V,8-Pin 1206 ChipFET RoHS: Compliant	0	300:$0.7800 600:$0.7000 1500:$0.6300 3000:$0.6100
SI5902BDC-T1-GE3 DISTI # 78-SI5902BDC-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs 1206-8 ChipFET RoHS: Compliant	4563	1:$1.3200 10:$1.0900 100:$0.8390 500:$0.7220 1000:$0.5690 3000:$0.5310 6000:$0.5050 9000:$0.4940
SI5902BDC-T1-GE3 DISTI # 2454808	Vishay Intertechnologies	MOSFET, DUAL, N-CH, 30V, 4A, 1206-8 RoHS: Compliant	0	3000:$0.8420 1000:$0.8590 500:$1.0900 100:$1.2700 10:$1.6600 1:$2.0000
SI5902BDC-T1-GE3 DISTI # 2454808RL	Vishay Intertechnologies	MOSFET, DUAL, N-CH, 30V, 4A, 1206-8 RoHS: Compliant	0	3000:$0.8420 1000:$0.8590 500:$1.0900 100:$1.2700 10:$1.6600 1:$2.0000
SI5902BDC-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs 1206-8 ChipFET RoHS: Compliant	Americas - 3000	3000:$0.5330 6000:$0.5060 12000:$0.4900 18000:$0.4770

Image	Part #	Description
	Mfr.#: SI5902BDC-T1-GE3 OMO.#: OMO-SI5902BDC-T1-GE3	MOSFET 30V Vds 20V Vgs 1206-8 ChipFET
	Mfr.#: SI5902BDC-T1-E3 OMO.#: OMO-SI5902BDC-T1-E3	MOSFET 30V Vds 20V Vgs 1206-8 ChipFET
	Mfr.#: SI5902BDC-T1-E3 OMO.#: OMO-SI5902BDC-T1-E3-VISHAY	IGBT Transistors MOSFET 30V 4.0A 3.12W
	Mfr.#: SI5902BDC-T1-GE3 OMO.#: OMO-SI5902BDC-T1-GE3-VISHAY	MOSFET 2N-CH 30V 4A 1206-8
	Mfr.#: SI5902BDCT1E3 OMO.#: OMO-SI5902BDCT1E3-1190	Small Signal Field-Effect Transistor, 4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SI5902BDC-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes