BSC090N03LSGATMA1

Mfr. #:: BSC090N03LSGATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3
Lifecycle:: New from this manufacturer.
Datasheet:: BSC090N03LSGATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TDSON-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 48 A

Rds On - Drain-Source Resistance:: 7.5 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 18 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 32 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 1.27 mm

Length:: 5.9 mm

Series:: OptiMOS 3

Transistor Type:: 1 N-Channel

Width:: 5.15 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 28 S

Fall Time:: 2.4 ns

Product Type:: MOSFET

Rise Time:: 2.6 ns

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 14 ns

Typical Turn-On Delay Time:: 3.1 ns

Part # Aliases:: BSC090N03LS BSC9N3LSGXT G SP000275115

Tags: BSC090N03LSG, BSC090N03L, BSC090N, BSC090, BSC09, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
Packaging Boxes

BSC090N03LSGATMA1 Description

***ure Electronics: Single N-Channel 30 V 9 mOhm 14 nC OptiMOS Power Mosfet - TDSON-8

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:48A; On Resistance Rds(On):0.0075Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Product Range:- Rohs Compliant: Yes

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ment14 APAC: MOSFET, N CH, 48A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:32W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:48A; Power Dissipation Pd:32W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ure Electronics: Single N-Channel 30 V 17.9 mOhm 14 nC OptiMOS Power Mosfet - TDSON-8

***el Electronic: Surface Mount Ceramic Multilayer Capacitor 0.0015uF 5% C0G 50V 0805 Paper T/R

***ark: Mosfet, N-Ch, 30V, 50A, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0066Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipationrohs Compliant: Yes

***ure Electronics: FDMS7680 Series 30 V 6.9 mOhm N-Channel PowerTrench Mosfet - POWER-56

***emi: N-Channel PowerTrench® MOSFET 30V, 6.9mΩ

***r Electronics: Power Field-Effect Transistor, 14A I(D), 30V, 0.0069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

***ure Electronics: Single N-Channel 30 V 8 mOhm 16 nC OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:53A; Power Dissipation Pd:35W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ure Electronics: N-Channel 30 V 9 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***Yang: Trans MOSFET N-CH 30V 13.5A 8-Pin SOIC N T/R - Tape and Reel

***emi: N-Channel PowerTrench® SyncFET™, 30V, 13.5A, 9.0mΩ

***nell: MOSFET, N-CH, 30V, 13.5A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V;

***rchild Semiconductor: The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6670AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

***ure Electronics: FDMS7692A Series 30 V 13.5 A 8 mOhm SMT N-Ch PowerTrench Mosfet - Power56

***emi: N-Channel PowerTrench® MOSFET 30V, 8mΩ

***r Electronics: Power Field-Effect Transistor, 13.5A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***nell: MOSFET, N CH, 30V, 28A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:27W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

***(Formerly Allied Electronics): IRF8714PBF N-channel MOSFET Transistor; 14 A; 30 V; 8-Pin SOIC

***roFlash: Single N-Channel 30 V 8.7 mOhm 8.1 nC HEXFET¬Æ Power Mosfet - SOIC-8

***nell: MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0087ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation P

Market price

Part #	Mfg.	Description	Stock	Price
BSC090N03LSGATMA1 DISTI # V72:2272_06390968	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R RoHS: Compliant	3300	3000:$0.2230 1000:$0.2478 500:$0.2979 250:$0.3011 100:$0.3044 25:$0.4237 10:$0.4289 1:$0.4935
BSC090N03LSGATMA1 DISTI # BSC090N03LSGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 48A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3140In Stock	1000:$0.3287 500:$0.4108 100:$0.5546 10:$0.7190 1:$0.8200
BSC090N03LSGATMA1 DISTI # BSC090N03LSGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 48A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3140In Stock	1000:$0.3287 500:$0.4108 100:$0.5546 10:$0.7190 1:$0.8200
BSC090N03LSGATMA1 DISTI # BSC090N03LSGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 48A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$0.2692
BSC090N03LSGATMA1 DISTI # 26195689	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R RoHS: Compliant	3300	3000:$0.2230 1000:$0.2478 500:$0.2979 250:$0.3011 100:$0.3044 35:$0.4237
BSC090N03LSGATMA1 DISTI # BSC090N03LSGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC090N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 10000	5000:$0.2399 10000:$0.2389 20000:$0.2379 30000:$0.2379 50000:$0.2369
BSC090N03LSGATMA1. DISTI # 31AC8219	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:48A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0075ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:-,Power Dissipation Pd:32W,No. of Pins:8Pins	0	1:$0.2370 10000:$0.2280 20000:$0.2240 30000:$0.2200 50000:$0.2170
BSC090N03LSGATMA1	Infineon Technologies AG	Single N-Channel 30 V 9 mOhm 14 nC OptiMOS Power Mosfet - TDSON-8 RoHS: Not Compliant	200Cut Tape/Mini-Reel	1:$0.3650 100:$0.3150 250:$0.3050 500:$0.3000 1500:$0.2800
BSC090N03LS G DISTI # 726-BSC090N03LSG	Infineon Technologies AG	MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3 RoHS: Compliant	25374	1:$0.6800 10:$0.5620 100:$0.3630 1000:$0.2910
BSC090N03LSGATMA1 DISTI # 726-BSC090N03LSGATMA	Infineon Technologies AG	MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3 RoHS: Compliant	4950	1:$0.6800 10:$0.5620 100:$0.3630 1000:$0.2910
BSC090N03LSGATMA1 DISTI # 1775458	Infineon Technologies AG	MOSFET, N CH, 48A, 30V, PG-TDSON-8 RoHS: Compliant	4553	5:£0.4850 25:£0.4480 100:£0.2780 250:£0.2590 500:£0.2410
BSC090N03LSGATMA1 DISTI # C1S322000595899	Infineon Technologies AG	MOSFETs RoHS: Compliant	3300	250:$0.3113 100:$0.3121 25:$0.4304 10:$0.4324

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BSC090N03LSGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes