RN1971TE85LF

Mfr. #:: RN1971TE85LF
Manufacturer:: Toshiba
Description:: Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
Lifecycle:: New from this manufacturer.
Datasheet:: RN1971TE85LF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: RN1971TE85LF Datasheet RN1971TE85LF Datasheet (P4-P6)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Toshiba

Product Category:: Bipolar Transistors - Pre-Biased

RoHS:: Y

Configuration:: Dual

Transistor Polarity:: NPN

Typical Input Resistor:: 10 kOhms

Mounting Style:: SMD/SMT

Package / Case:: SOT-363-6

DC Collector/Base Gain hfe Min:: 120

Collector- Emitter Voltage VCEO Max:: 50 V

Continuous Collector Current:: 100 mA

Pd - Power Dissipation:: 200 mW

Series:: RN1971

Packaging:: Reel

Emitter- Base Voltage VEBO:: 5 V

Brand:: Toshiba

Maximum DC Collector Current:: 100 mA

Product Type:: BJTs - Bipolar Transistors - Pre-Biased

Factory Pack Quantity:: 3000

Subcategory:: Transistors

Unit Weight:: 0.000212 oz

Tags: RN1971T, RN1971, RN197, RN19, RN1

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RN1971TE85LF Description

***et: Trans Digital BJT NPN 50V 100mA 6-Pin US T/R

***el Electronic: Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V

***i-Key: TRANS 2NPN PREBIAS 0.2W US6

***ure Electronics: DDC114YU Series NPN/PNP 50 V 100 mA Dual Transistor Surface Mount - SOT-363-6

***(Formerly Allied Electronics): NPN Biased Signal Dual Transistor SOT363 | Diodes Inc DDC114YU-7-F

***ical: Trans Digital BJT NPN 50V 100mA 200mW 6-Pin SOT-363 T/R

***nell: TRANS, RF, 50V, SOT-363; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: -; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ca Corp: Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

***ure Electronics: DDC144EU Series 50 V 100 mA NPN Surface Mount Dual Transistor - SOT-363-6

***ow.cn: Trans Digital BJT NPN 50V 100mA 200mW 6-Pin SOT-363 T/R

***ark: Transistor Polarity:Single NPN; Collector Emitter Voltage Max NPN:50V; Collector Emitter Voltage Max PNP:-; Continuous Collector Current:100mA; Base Input Resistor R1:10kohm; Base Emitter Resistor R2:10kohm; No. of Pins:6 Pin; MSL:- RoHS Compliant: Yes

***p One Stop Global: Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R

***ure Electronics: DCX143TU Series 50V 100 mA Small Signal Complementary Pre-Biased Dual Transistor

***ark: Rf Transistor, 50V, 0.1A, Sot-363 Rohs Compliant: Yes |Diodes Inc. DCX143TU-7-F

***ical: Trans Digital BJT NPN 50V 100mA 150mW 6-Pin UMT T/R

***ure Electronics: UMH3N Series 50 V 100 mA Surface Mount Dual NPN Digital Transistor - SC-88

***ark: Transistor Dual, Npn/npn, Um6; Transistor Polarity:dual Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:4.7Kohm; Base Emitter Resistor R2:- Rohs Compliant: Yes

***nell: TRANSISTOR DUAL UM6 NPN/NPN; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: -; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: UMH3N Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 300mV; Current Ic Continuous a Max: 5mA; DC Collector Current: 100mA; DC Current Gain hFE: 250hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 100; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-363; Transistor Polarity: NPN; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

***ure Electronics: UMD2N Series 50 V 100 mA Surface Mount Dual NPN/PNP Digital Transistor - SOT-363

***ical: Trans Digital BJT NPN/PNP 50V 100mA 150mW 6-Pin UMT T/R

***ment14 APAC: Transistor DUAL UM6 PNP/NPN; Digital Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Current

***ark: TRANSISTOR DUAL UM6 PNP/NPN; Transistor Type:General Purpose; Transistor Polarity:NPN / PNP; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:5mA; Voltage, Vce Sat Max:300mV; Power Dissipation:150mW; Min ;RoHS Compliant: Yes

***nell: TRANSISTOR DUAL UM6 PNP/NPN; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: -; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: UMD6N Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 300mV; Current Ic Continuous a Max: 5mA; DC Collector Current: 100mA; DC Current Gain hFE: 250hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 100; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 150mW; Termination Type: Surface Mount Device; Transistor Case Style: SOT-363; Transistor Polarity: NPN, PNP; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

***ical: Trans Digital BJT NPN 50V 100mA 200mW 6-Pin US T/R

***el Electronic: Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

***i-Key: TRANS 2NPN PREBIAS 0.2W US6

***: TRANS US6 PLN (LF) 200MW

Market price

Part #	Mfg.	Description	Stock	Price
RN1971TE85LF DISTI # RN1971TE85LFTR-ND	Toshiba America Electronic Components	TRANS 2NPN PREBIAS 0.2W US6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$0.0630
RN1971TE85LF DISTI # RN1971TE85LFCT-ND	Toshiba America Electronic Components	TRANS 2NPN PREBIAS 0.2W US6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
RN1971TE85LF DISTI # RN1971TE85LFDKR-ND	Toshiba America Electronic Components	TRANS 2NPN PREBIAS 0.2W US6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
RN1971TE85LF DISTI # 757-RN1971TE85LF	Toshiba America Electronic Components	Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V RoHS: Compliant	0	1:$0.3900 10:$0.2170 100:$0.0930 1000:$0.0720 3000:$0.0540 9000:$0.0480 24000:$0.0450 45000:$0.0400 99000:$0.0390

Image	Part #	Description
	Mfr.#: RN1971TE85LF OMO.#: OMO-RN1971TE85LF	Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
	Mfr.#: RN1971FS(TPL3) OMO.#: OMO-RN1971FS-TPL3--123	Bipolar Transistors - Pre-Biased 50mA 20volts 6Pin 10Kohms
	Mfr.#: RN1971TE85LF OMO.#: OMO-RN1971TE85LF-TOSHIBA-SEMICONDUCTOR-AND-STOR	Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
	Mfr.#: RN1971FE(TE85LF)CT-ND OMO.#: OMO-RN1971FE-TE85LF-CT-ND-1190	New and Original
	Mfr.#: RN1971FE(TE85LF)DKR-ND OMO.#: OMO-RN1971FE-TE85LF-DKR-ND-1190	New and Original
	Mfr.#: RN1971FE(TE85LF)TR-ND OMO.#: OMO-RN1971FE-TE85LF-TR-ND-1190	New and Original
	Mfr.#: RN1971TE85LFCT-ND OMO.#: OMO-RN1971TE85LFCT-ND-1190	New and Original
	Mfr.#: RN1971TE85LFDKR-ND OMO.#: OMO-RN1971TE85LFDKR-ND-1190	New and Original
	Mfr.#: RN1971TE85LFTR-ND OMO.#: OMO-RN1971TE85LFTR-ND-1190	New and Original
	Mfr.#: RN1971FE OMO.#: OMO-RN1971FE-1190	New and Original

RN1971TE85LF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes