MRFE6S9135HSR3

Mfr. #:: MRFE6S9135HSR3
Manufacturer:: NXP Semiconductors
Description:: RF MOSFET Transistors HV6E 900MHZ 135W NI880S
Lifecycle:: New from this manufacturer.
Datasheet:: MRFE6S9135HSR3 Datasheet
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More Information:: MRFE6S9135HSR3 more Information MRFE6S9135HSR3 Product Details

Product Attribute
Attribute Value

Manufacturer: FREESCALE

Product Category: IC Chips

Tags: MRFE6S9135HS, MRFE6S9135, MRFE6S913, MRFE6S91, MRFE6S9, MRFE6S, MRFE6, MRFE, MRF

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRFE6S9135HSR3 Description

***escale Semiconductor: Single W-CDMA Lateral N-Channel RF Power MOSFET, 940 MHz, 39 W Avg., 28 V

***et: Transistor RF FET N-CH 66V 940MHz 3-Pin NI-880S T/R

***el Electronic: LED DRVR 12Segment 3.3V/5V 20-Pin HTSSOP EP T/R

***or: RF ULTRA HIGH FREQUENCY BAND, N-

***escale Semiconductor: Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 14 W Avg., 28 V

***W: RF Power Transistor,470 to 960 MHz, 60 W, Typ Gain in dB is 21.1 @ 880 MHz, 28 V, LDMOS, SOT1732

***ark: RF MOSFET, N CHANNEL, 66V, TO-270; Transistor Type:RF FET; Drain Source Voltage, Vds:66V; RF Transistor Case:TO-270; Gain:21.1dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:880MHz ;RoHS Compliant: Yes

***nell: TRANSISTOR, RF, 66V, TO-270-2; Drain Source Voltage Vds: 66VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 470MHz; Operating Frequency Max: 960MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***escale Semiconductor: Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 10 W Avg., 28 V

***W: RF Power Transistor,865 to 960 MHz, 45 W, Typ Gain in dB is 22.1 @ 880 MHz, 28 V, LDMOS, SOT1732

***ment14 APAC: RF MOSFET, N CHANNEL, 66V, TO-270; Transistor Type:RF MOSFET; Drain Source Voltage Vds:66V; Operating Frequency Min:920MHz; Operating Frequency Max:960MHz; RF Transistor Case:TO-270; No. of Pins:2; Filter Terminals:Surface Mount

***ark: RF MOSFET, N CHANNEL, 66V, TO-270; Transistor Type:RF FET; Drain Source Voltage, Vds:66V; RF Transistor Case:TO-270; Gain:22.1dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:880MHz ;RoHS Compliant: Yes

***escale Semiconductor: Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFET, 800 MHz, 27 W Avg., 28 V

***W: RF Power Transistor,865 to 960 MHz, 125 W, Typ Gain in dB is 20.2 @ 880 MHz, 28 V, LDMOS, SOT1735

***et: Transistor RF FET N-CH 66V 865MHz to 960MHz 5-Pin TO-272WB T/R

***ical: Trans RF MOSFET N-CH 66V 5-Pin TO-272 WB EP T/R

*** Electronic Components: RF MOSFET Transistors HV6E 125W

***ure Electronics: Single N-Channel 60 V 11 mOhm 33 nC OptiMOS Power Mosfet - TDSON-8

*** Source Electronics: Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP T/R / OptiMOS3 Power-Transistor

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS

***nell: MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:8; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***emi: N-Channel MOSFET, Logic Level Enhancement Mode, 50V 0.22A, 1.6Ω

***inecomponents.com: SOT23, 50V NCh Enhancement Mode Field Effect Transistor with

***Yang: Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R - Tape and Reel

***el Electronic: Surface Mount Ceramic Multilayer Capacitor 0.1uF 10% X7R 50V 0805 Paper T/R

***ment14 APAC: MOSFET, N-CH, 50V, 0.22A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:220mA; Source Voltage Vds:50V; On Resistance

***r Electronics: Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***nell: MOSFET, N-CH, 50V, 0.22A, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 220mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 1.6ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 600mV; Power Dissipation Pd: 350mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 220 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) Ohm = 2.5 / Gate-Source Voltage V = 12 / Fall Time ns = 35 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 60 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 350

*** Source Electronics: Trans MOSFET N-CH 50V 0.16A 3-Pin SOT-523 T/R / MOSFET N-CH 50V 160MA SOT-523

***ure Electronics: DMN55D0UT Series 50 V 160 mA N-Channel Enhancement Mode Mosfet - SOT-523

***nell: MOSFET, N-CH, 50V, SOT-523-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 160mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 3.1ohm; Rds(on) Test Voltage Vgs: 4; Available until stocks are exhausted

Market price

Part #	Mfg.	Description	Stock	Price
MRFE6S9135HSR3 DISTI # MRFE6S9135HSR3-ND	NXP Semiconductors	FET RF 66V 940MHZ NI-880S RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	Limited Supply - Call
MRFE6S9135HSR3	Freescale Semiconductor	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET RoHS: Compliant	16	1000:$86.2400 500:$90.7800 100:$94.5100 25:$98.5600 1:$106.1400
MRFE6S9135HSR3 DISTI # 841-MRFE6S9135HSR3	NXP Semiconductors	RF MOSFET Transistors HV6E 900MHZ 135W NI880S RoHS: Compliant	0

Image	Part #	Description
	Mfr.#: MRFE6S9060NR1 OMO.#: OMO-MRFE6S9060NR1	RF MOSFET Transistors HV6E 60W TO270-2N FET
	Mfr.#: MRFE6S9045NR1 OMO.#: OMO-MRFE6S9045NR1	RF MOSFET Transistors HV6E 45W NI270-2 FET
	Mfr.#: MRFE6S9205HSR3 OMO.#: OMO-MRFE6S9205HSR3	RF MOSFET Transistors HV6E 900MHZ 200W NI880HS
	Mfr.#: MRFE6S9200HR5 OMO.#: OMO-MRFE6S9200HR5-NXP-SEMICONDUCTORS	FET RF 66V 880MHZ NI-880
	Mfr.#: MRFE6S9130HR5 OMO.#: OMO-MRFE6S9130HR5-NXP-SEMICONDUCTORS	FET RF 66V 880MHZ NI-780
	Mfr.#: MRFE6S9200H OMO.#: OMO-MRFE6S9200H-1190	New and Original
	Mfr.#: MRFE6S9200HSR3 OMO.#: OMO-MRFE6S9200HSR3-NXP-SEMICONDUCTORS	FET RF 66V 880MHZ NI-880S
	Mfr.#: MRFE6S9201HR5 OMO.#: OMO-MRFE6S9201HR5-NXP-SEMICONDUCTORS	FET RF 66V 880MHZ NI-780
	Mfr.#: MRFE6S9200HSR5 OMO.#: OMO-MRFE6S9200HSR5-NXP-SEMICONDUCTORS	FET RF 66V 880MHZ NI-880S
	Mfr.#: MRFE6S9135HSR3 OMO.#: OMO-MRFE6S9135HSR3-NXP-SEMICONDUCTORS	RF MOSFET Transistors HV6E 900MHZ 135W NI880S

MRFE6S9135HSR3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes