IPL65R725CFDAUMA1

Mfr. #:: IPL65R725CFDAUMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 700V 5.8A VSON-5
Lifecycle:: New from this manufacturer.
Datasheet:: IPL65R725CFDAUMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: VSON-4

Number of Channels:: 2 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 650 V

Id - Continuous Drain Current:: 5.8 A

Rds On - Drain-Source Resistance:: 725 mOhms

Vgs th - Gate-Source Threshold Voltage:: 4 V

Vgs - Gate-Source Voltage:: 30 V

Qg - Gate Charge:: 20 nC

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 62.5 W

Configuration:: Dual

Tradename:: CoolMOS

Packaging:: Reel

Height:: 1.1 mm

Length:: 8 mm

Series:: CoolMOS CFDA

Transistor Type:: 2 N-Channel

Width:: 8 mm

Brand:: Infineon Technologies

Fall Time:: 10 ns

Product Type:: MOSFET

Rise Time:: 8 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 40 ns

Typical Turn-On Delay Time:: 9 ns

Part # Aliases:: IPL65R725CFD SP000949266

Tags: IPL65R, IPL65, IPL6, IPL

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPL65R725CFDAUMA1 Description

***et: Trans MOSFET N-CH 650(Min)V 5.8A 4-Pin VSON T/R

***i-Key: MOSFET N-CH 4VSON

***ineon: 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility

Market price

Part #	Mfg.	Description	Stock	Price
IPL65R725CFDAUMA1 DISTI # IPL65R725CFDAUMA1-ND	Infineon Technologies AG	MOSFET N-CH 4VSON RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
IPL65R725CFDAUMA1 DISTI # IPL65R725CFDAUMA1	Infineon Technologies AG	Trans MOSFET N-CH 650(Min)V 5.8A 4-Pin VSON T/R - Tape and Reel (Alt: IPL65R725CFDAUMA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0

IPL65R725CFDAUMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes