HUF75639S3ST

Mfr. #:: HUF75639S3ST
Manufacturer:: ON Semiconductor / Fairchild
Description:: MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm
Lifecycle:: New from this manufacturer.
Datasheet:: HUF75639S3ST Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: E

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 56 A

Rds On - Drain-Source Resistance:: 25 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 200 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: UltraFET

Packaging:: Reel

Height:: 4.83 mm

Length:: 10.67 mm

Series:: HUF75639S3S

Transistor Type:: 1 N-Channel

Type:: MOSFET

Width:: 9.65 mm

Brand:: ON Semiconductor / Fairchild

Fall Time:: 25 ns

Product Type:: MOSFET

Rise Time:: 60 ns

Factory Pack Quantity:: 800

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 20 ns

Typical Turn-On Delay Time:: 15 ns

Part # Aliases:: HUF75639S3ST_NL

Unit Weight:: 0.046296 oz

Tags: HUF75639S3ST, HUF75639S3S, HUF75639S3, HUF75639S, HUF75639, HUF7563, HUF756, HUF75, HUF7, HUF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HUF75639S3ST Description

*** Source Electronics: Trans MOSFET N-CH Si 100V 56A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 56A D2PAK

***emi: N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ

***ure Electronics: N-Channel 100 V 0.025 Ohm UltraFET Power Mosfet - TO-263AB

*** Stop Electro: Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***rchild Semiconductor: These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

***ark: Transistor,mosfet,n-Channel,100V V(Br)Dss,56A I(D),to-263Ab Rohs Compliant: Yes

***emi: N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ

***r Electronics: Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ical: Trans MOSFET N-CH 100V 56A Automotive 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 56A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***emi: N-Channel UltraFET® Power MOSFET 100V, 56A, 25mΩ

***rchild Semiconductor: These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area,resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

***ineon SCT: Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

***ow.cn: Trans MOSFET N-CH Si 100V 59A Automotive 3-Pin(2+Tab) D2PAK Tube

***roFlash: Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified

***ment14 APAC: MOSFET, N CH, 100V, 59A, D2PAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:160W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:59A; Power Dissipation Pd:160W; Voltage Vgs Max:20V

***ical: Trans MOSFET N-CH 100V 59A Automotive 3-Pin(2+Tab) D2PAK T/R

***(Formerly Allied Electronics): AUTOMOTIVE MOSFET, 100V 59.000A AUTO D2PAK

*** Electronic Components: IGBT Transistors MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms

***roFlash: Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ical: Trans MOSFET N-CH 100V 47A Automotive 3-Pin(2+Tab) D2PAK T/R

***ineon SCT: 100V, N-Ch, 26 mΩ max, Automotive MOSFET, D2PAK, SIPMOS™, PG-TO263-3, RoHS

*** Stop Electro: Power Field-Effect Transistor, 47A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Summary of Features: N-Channel; Enhancement mode; Logic Level; 175C operating temperature; Avalanche rated; dv/dt rated; Green Package (lead free) | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting

***ser: MOSFETs 44a, 100V, 0.030 Ohm N-Ch MOSFET

***i-Key: MOSFET N-CH 100V 44A D2PAK

***et: PWR MOS ULTRAFET 100V/41A/0.030 OHM N-CH TO-263AB T&REEL

***el Nordic: Contact for details

Market price

Part #	Mfg.	Description	Stock	Price
HUF75639S3ST DISTI # 27524398	ON Semiconductor	FET 100V 25.0 MOHM D2PAK	20800	800:$1.1590
HUF75639S3ST DISTI # 31291507	ON Semiconductor	FET 100V 25.0 MOHM D2PAK	2400	800:$1.1712
HUF75639S3ST DISTI # HUF75639S3STCT-ND	ON Semiconductor	MOSFET N-CH 100V 56A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	326In Stock	100:$1.9731 10:$2.4550 1:$2.7200
HUF75639S3ST DISTI # HUF75639S3STDKR-ND	ON Semiconductor	MOSFET N-CH 100V 56A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	326In Stock	100:$1.9731 10:$2.4550 1:$2.7200
HUF75639S3ST DISTI # HUF75639S3STTR-ND	ON Semiconductor	MOSFET N-CH 100V 56A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	Temporarily Out of Stock	800:$1.3452
HUF75639S3ST DISTI # C1S541901472184	ON Semiconductor	MOSFETs RoHS: Compliant	2400	2400:$0.7150 1600:$0.7700 800:$1.0000
HUF75639S3ST DISTI # HUF75639S3ST	ON Semiconductor	Trans MOSFET N-CH 100V 56A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: HUF75639S3ST) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0	800:$0.8409 1600:$0.8379 3200:$0.8359 4800:$0.8329 8000:$0.8299
HUF75639S3ST DISTI # 98B2178	ON Semiconductor	TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,56A I(D),TO-263AB ROHS COMPLIANT: YES	0	1:$1.1700 800:$1.1600 2400:$1.0600 9600:$1.0300
HUF75639S3ST DISTI # 512-HUF75639S3ST	ON Semiconductor	MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm RoHS: Compliant	1224	1:$2.2800 10:$1.9400 100:$1.5500 500:$1.3600 800:$1.1300
HUF75639S3ST	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	203573	1000:$1.0800 500:$1.1400 100:$1.1800 25:$1.2300 1:$1.3300
HUF75639S3STNL	Fairchild Semiconductor Corporation	RoHS: Not Compliant	88	1000:$0.6700 500:$0.7100 100:$0.7400 25:$0.7700 1:$0.8300
HUF75639S3ST_Q	Fairchild Semiconductor Corporation	RoHS: Not Compliant	36800	1000:$1.0700 500:$1.1200 100:$1.1700 25:$1.2200 1:$1.3100
HUF75639S3ST	Fairchild Semiconductor Corporation		1600
HUF75639S3ST DISTI # HUF75639S3ST	ON Semiconductor	Transistor: N-MOSFET,unipolar,100V,56A,200W,TO263AB	723	1:$1.1900 3:$1.0800 10:$0.8600 100:$0.7500
HUF75639S3ST	Fairchild Semiconductor Corporation	56A,100V,N-channel high power MOSFET	4	1:$1.8800 100:$1.5100 500:$1.2600 1000:$1.1800

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Availability

Stock:: Available
On Order:: 1985
Enter Quantity:

Current price of HUF75639S3ST is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$2.03~~; ~~$2.03~~

10: ~~$1.72~~; ~~$17.20~~

100: ~~$1.38~~; ~~$138.00~~

500: ~~$1.20~~; ~~$600.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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HUF75639S3ST

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes