HGTG12N60C3D

HGTG12N60C3D
Mfr. #:
HGTG12N60C3D
Manufacturer:
ON Semiconductor / Fairchild
Description:
IGBT Transistors 24a 600V IGBT UFS N-Channel
Lifecycle:
New from this manufacturer.
Datasheet:
HGTG12N60C3D Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
IGBT Transistors
RoHS:
E
Technology:
Si
Package / Case:
TO-247-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
600 V
Collector-Emitter Saturation Voltage:
1.65 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
24 A
Pd - Power Dissipation:
104 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Series:
HGTG12N60C3D
Packaging:
Tube
Continuous Collector Current Ic Max:
24 A
Height:
20.82 mm
Length:
15.87 mm
Width:
4.82 mm
Brand:
ON Semiconductor / Fairchild
Continuous Collector Current:
24 A
Gate-Emitter Leakage Current:
+/- 100 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
450
Subcategory:
IGBTs
Part # Aliases:
HGTG12N60C3D_NL
Unit Weight:
0.225753 oz
Tags
HGTG12N, HGTG12, HGTG1, HGTG, HGT
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
***ical
Trans IGBT Chip N=-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-247 Rail
***p One Stop Global
Trans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-247 Rail
***inecomponents.com
600V,24A,UFS,SERIES NCH IGBT W/ANTI-PARALLEL HYPERFAST DIODE
***et
UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIOD
***ser
IGBTs 24a, 600V, IGBT UFS N-Channel
***o-Tech
Transistor IGBT N-Ch 600V 24A TO247
***th Star Micro
IGBT UFS N-CHAN 600V 24A TO-247
***nell
IGBT, N, 3-TO-247; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:600V; Current Ic Continuous a Max:24A; Voltage, Vce Sat Max:2V; Power Dissipation:104W; Case Style:TO-247; Termination Type:Through Hole
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:24A; Collector Emitter Saturation Voltage, Vce(sat):1.65V; Power Dissipation, Pd:104W; Package/Case:3-TO-247; C-E Breakdown Voltage:600V ;RoHS Compliant: Yes
***ment14 APAC
IGBT, N, 3-TO-247; Transistor Type:IGBT; DC Collector Current:24A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:104W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:24A; Package / Case:TO-247; Power Dissipation Max:104W; Power Dissipation Pd:104W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***rchild Semiconductor
The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage dorp varies only moderately 25°C and 150°C. The IBGT used is the development type TA49123. The diode in anti parallel with the IGBT is the development type TA49061.The IGBT is ideal for mant high voltage switching applications operating at moderate frquencies where low conduction losses are essential.Formerly Developmental Type TA49117.
Part # Mfg. Description Stock Price
HGTG12N60C3D
DISTI # V79:2366_17784181
ON SemiconductorPTPIGBT TO247 24A 600V17
  • 2500:$3.1600
  • 1000:$3.3260
  • 500:$3.9380
  • 250:$4.3830
  • 100:$4.6150
  • 10:$5.3060
  • 1:$6.8332
HGTG12N60C3D
DISTI # V36:1790_06359200
ON SemiconductorPTPIGBT TO247 24A 600V0
    HGTG12N60C3D
    DISTI # HGTG12N60C3D-ND
    ON SemiconductorIGBT 600V 24A 104W TO247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    10In Stock
    • 1350:$3.5349
    • 900:$4.1914
    • 450:$4.6711
    • 10:$6.0090
    • 1:$6.6900
    HGTG12N60C3D
    DISTI # 32314369
    ON SemiconductorPTPIGBT TO247 24A 600V1674
    • 900:$4.3560
    • 9:$4.8510
    HGTG12N60C3D
    DISTI # 30249921
    ON SemiconductorPTPIGBT TO247 24A 600V17
    • 2500:$3.3970
    • 1000:$3.5755
    • 500:$4.2333
    • 250:$4.7117
    • 100:$4.9611
    • 10:$5.7039
    • 5:$6.6779
    HGTG12N60C3D
    DISTI # HGTG12N60C3D
    ON SemiconductorTrans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG12N60C3D)
    RoHS: Compliant
    Min Qty: 1
    Europe - 0
    • 1000:€2.3900
    • 500:€2.5900
    • 100:€2.6900
    • 50:€2.7900
    • 25:€2.8900
    • 10:€2.9900
    • 1:€3.2900
    HGTG12N60C3D
    DISTI # HGTG12N60C3D
    ON SemiconductorTrans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: HGTG12N60C3D)
    RoHS: Compliant
    Min Qty: 72
    Container: Bulk
    Americas - 0
    • 720:$4.2900
    • 216:$4.3900
    • 360:$4.3900
    • 72:$4.4900
    • 144:$4.4900
    HGTG12N60C3D
    DISTI # HGTG12N60C3D
    ON SemiconductorTrans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG12N60C3D)
    RoHS: Compliant
    Min Qty: 450
    Container: Tube
    Americas - 0
    • 4500:$3.7900
    • 2700:$3.8900
    • 900:$3.9900
    • 1800:$3.9900
    • 450:$4.0900
    HGTG12N60C3D
    DISTI # 58K1586
    ON SemiconductorTrans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K1586)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk
    Americas - 0
    • 1:$4.6900
    HGTG12N60C3D
    DISTI # 58K1586
    ON SemiconductorSINGLE IGBT, 600V, 24A,DC Collector Current:24A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:104W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes0
    • 500:$4.0300
    • 250:$4.4900
    • 100:$4.7400
    • 50:$4.9800
    • 25:$5.2200
    • 10:$5.4600
    • 1:$6.4200
    HGTG12N60C3D
    DISTI # 512-HGTG12N60C3D
    ON SemiconductorIGBT Transistors 24a 600V IGBT UFS N-Channel
    RoHS: Compliant
    110
    • 1:$6.3600
    • 10:$5.4100
    • 100:$4.6900
    • 250:$4.4500
    • 500:$3.9900
    • 1000:$3.3600
    • 2500:$3.1900
    HGTG12N60C3DFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-247
    RoHS: Compliant
    213
    • 1000:$4.5900
    • 500:$4.8300
    • 100:$5.0300
    • 25:$5.2500
    • 1:$5.6500
    HGTG12N60C3DHarris SemiconductorInsulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-247
    RoHS: Compliant
    6698
    • 1000:$4.5900
    • 500:$4.8300
    • 100:$5.0300
    • 25:$5.2500
    • 1:$5.6500
    HGTG12N60C3DRHarris SemiconductorInsulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel
    RoHS: Not Compliant
    659
    • 1000:$2.0400
    • 500:$2.1500
    • 100:$2.2400
    • 25:$2.3300
    • 1:$2.5100
    HGTG12N60C3D
    DISTI # HGTG12N60C3D
    ON SemiconductorTransistor: IGBT,600V,12A,104W,TO247-3133
    • 1:$2.1800
    • 3:$1.8800
    • 10:$1.7400
    • 30:$1.5600
    • 150:$1.4600
    HGTG12N60C3D
    DISTI # 1467936
    ON SemiconductorIGBT, N, 3-TO-247
    RoHS: Compliant
    0
    • 2500:$4.9100
    • 1000:$5.1700
    • 500:$6.1400
    • 250:$6.8500
    • 100:$7.2200
    • 10:$8.3200
    • 1:$9.7800
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    Availability
    Stock:
    54
    On Order:
    2037
    Enter Quantity:
    Current price of HGTG12N60C3D is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $6.36
    $6.36
    10
    $5.41
    $54.10
    100
    $4.69
    $469.00
    250
    $4.45
    $1 112.50
    500
    $3.99
    $1 995.00
    1000
    $3.36
    $3 360.00
    2500
    $3.19
    $7 975.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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