IRFH7911TR2PBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PQFN-18

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

13 A

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

8.3 nC, 34 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.4 W, 3.4 W

Configuration:

Dual

Channel Mode:

Enhancement

Tradename:

StrongIRFET

Packaging:

Reel

Height:

1 mm

Length:

6 mm

Transistor Type:

2 N-Channel

Width:

5 mm

Brand:

Infineon / IR

Forward Transconductance - Min:

17 S, 106 S

Fall Time:

5.9 ns, 14 ns

Moisture Sensitive:

Yes

Product Type:

MOSFET

Rise Time:

15 ns, 35 ns

Factory Pack Quantity:

400

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

12 ns, 28 ns

Typical Turn-On Delay Time:

12 ns, 22 ns

Part # Aliases:

SP001565986

Unit Weight:

0.017637 oz

Tags

IRFH791, IRFH79, IRFH7, IRFH, IRF