STD4NK60Z-1

STD4NK60Z-1
Mfr. #:
STD4NK60Z-1
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch, 600V-1.76ohms Zener SuperMESH 4A
Lifecycle:
New from this manufacturer.
Datasheet:
STD4NK60Z-1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
STD4NK60Z-1 more Information STD4NK60Z-1 Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-251-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
4 A
Rds On - Drain-Source Resistance:
2 Ohms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
70 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
SuperMESH
Packaging:
Tube
Height:
6.2 mm
Length:
6.6 mm
Series:
STD4NK60Z-1
Transistor Type:
1 N-Channel
Width:
2.4 mm
Brand:
STMicroelectronics
Fall Time:
16.5 ns
Product Type:
MOSFET
Rise Time:
9.5 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
29 ns
Typical Turn-On Delay Time:
12 ns
Unit Weight:
0.139332 oz
Tags
STD4NK60Z-1, STD4NK60Z, STD4NK60, STD4NK6, STD4NK, STD4N, STD4, STD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 1.76 Ohm, 4 A SuperMESH(TM) Power MOSFET in IPAK
***ark
MOSFET Transistor, N Channel, 2 A, 600 V, 1.76 ohm, 10 V, 3.75 V
*** Source Electronics
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) IPAK Tube / MOSFET N-CH 600V 4A IPAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***nell
MOSFET, N CH, 600V, 4A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.76ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:70W; Transistor Case Style:TO-251AA; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (17-Dec-2015); Current Id Max:4A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Part # Mfg. Description Stock Price
STD4NK60Z-1
DISTI # STD4NK60Z-1-ND
STMicroelectronicsMOSFET N-CH 600V 4A IPAK
RoHS: Compliant
Min Qty: 3000
Container: Tube
Limited Supply - Call
  • 3000:$0.6791
STD4NK60Z-1
DISTI # STD4NK60Z-1
STMicroelectronicsTrans MOSFET N-CH 600V 4A 3-Pin(3+Tab) IPAK T/R (Alt: STD4NK60Z-1)
RoHS: Compliant
Min Qty: 75
Container: Tape and Reel
Europe - 2530
  • 75:€0.3189
  • 150:€0.2609
  • 300:€0.2389
  • 450:€0.2209
  • 750:€0.2049
STD4NK60Z-1
DISTI # STD4NK60Z-1
STMicroelectronicsTrans MOSFET N-CH 600V 4A 3-Pin(3+Tab) IPAK T/R - Rail/Tube (Alt: STD4NK60Z-1)
RoHS: Compliant
Min Qty: 3000
Container: Tube
Americas - 0
  • 3000:$0.6609
  • 6000:$0.6299
  • 12000:$0.6009
  • 18000:$0.5739
  • 30000:$0.5629
STD4NK60Z-1
DISTI # 511-STD4NK60Z-1
STMicroelectronicsMOSFET N-Ch, 600V-1.76ohms Zener SuperMESH 4A
RoHS: Compliant
1970
  • 1:$1.4500
  • 10:$1.2400
  • 100:$0.9490
  • 500:$0.8380
  • 1000:$0.6620
  • 3000:$0.5870
  • 9000:$0.5650
STD4NK60Z-1STMicroelectronics 3922
    STD4NK60Z1STMicroelectronics 
    RoHS: Compliant
    Europe - 825
      STD4NK60Z-1
      DISTI # TMOS1731
      STMicroelectronicsN-CH 600V 4A 2000mOhm TO251-3
      RoHS: Compliant
      Stock DE - 375Stock US - 0
      • 75:$0.3624
      • 150:$0.3417
      • 300:$0.3210
      • 600:$0.2900
      • 1200:$0.2796
      STD4NK60Z-1
      DISTI # XSFP00000135448
      STMicroelectronicsPowerField-EffectTransistor,4AI(D),600V,2ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-251
      RoHS: Compliant
      2019
      • 525:$0.4000
      • 2019:$0.3636
      Image Part # Description
      STB4NK60Z-1

      Mfr.#: STB4NK60Z-1

      OMO.#: OMO-STB4NK60Z-1

      MOSFET N-Ch, 600V-1.76ohms Zener SuperMESH 4A
      STB4NK60Z-1

      Mfr.#: STB4NK60Z-1

      OMO.#: OMO-STB4NK60Z-1-STMICROELECTRONICS

      MOSFET N-CH 600V 4A I2PAK
      Availability
      Stock:
      Available
      On Order:
      1984
      Enter Quantity:
      Current price of STD4NK60Z-1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $1.45
      $1.45
      10
      $1.24
      $12.40
      100
      $0.95
      $94.90
      500
      $0.84
      $419.00
      1000
      $0.66
      $662.00
      3000
      $0.59
      $1 761.00
      9000
      $0.56
      $5 085.00
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