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A3T23H300W23SR6

A3T23H300W23SR6
Mfr. #:
A3T23H300W23SR6
Manufacturer:
NXP Semiconductors
Description:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 63 W Avg., 30 V
Lifecycle:
New from this manufacturer.
Datasheet:
A3T23H300W23SR6 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
A3T23H300W23SR6 more Information A3T23H300W23SR6 Product Details
Product Attribute
Attribute Value
Manufacturer:
NXP
Product Category:
RF MOSFET Transistors
RoHS:
Y
Transistor Polarity:
Dual N-Channel
Technology:
Si
Id - Continuous Drain Current:
3.2 A
Vds - Drain-Source Breakdown Voltage:
- 5 V, 65 V
Gain:
15.6 dB
Output Power:
63 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Mounting Style:
SMD/SMT
Package / Case:
ACP-1230S-4L2S
Packaging:
Reel
Operating Frequency:
2300 MHz to 2400 MHz
Type:
RF Power MOSFET
Brand:
NXP Semiconductors
Number of Channels:
2 Channel
Product Type:
RF MOSFET Transistors
Factory Pack Quantity:
150
Subcategory:
MOSFETs
Vgs - Gate-Source Voltage:
- 6 V, 10 V
Vgs th - Gate-Source Threshold Voltage:
1.3 V
Part # Aliases:
935374249128
Tags
A3T23, A3T2, A3T
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Airfast® Third-Generation Power Amplifiers
NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.
Image Part # Description
A3T23H300W23SR6

Mfr.#: A3T23H300W23SR6

OMO.#: OMO-A3T23H300W23SR6

 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 63 W Avg., 30 V
Availability
Stock:
150
On Order:
2133
Enter Quantity:
Current price of A3T23H300W23SR6 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$96.00
$96.00
5
$94.24
$471.20
10
$90.00
$900.00
25
$87.00
$2 175.00
100
$81.01
$8 101.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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