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FQP7N10

FQP7N10
Mfr. #:
FQP7N10
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 100V N-Channel QFET
Lifecycle:
New from this manufacturer.
Datasheet:
FQP7N10 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
7.3 A
Rds On - Drain-Source Resistance:
350 mOhms
Vgs - Gate-Source Voltage:
25 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
40 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
16.3 mm
Length:
10.67 mm
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
4.7 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
3.6 S
Fall Time:
19 ns
Product Type:
MOSFET
Rise Time:
24 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
13 ns
Typical Turn-On Delay Time:
7 ns
Unit Weight:
0.050717 oz
Tags
FQP7N1, FQP7N, FQP7, FQP
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***inecomponents.com
Trans MOSFET N-CH 100V 7.3A 3-Pin (3+Tab) TO-220 Rail
***ark
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:7.3A; Resistance, Rds On:0.35ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220; Termination ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):350mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Alternate Case Style:SOT-78B; Avalanche Single Pulse Energy Eas:50mJ; Capacitance Ciss Typ:190pF; Current Id Max:7.3A; Current Temperature:25°C; Device Marking:FQP7N10; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:350mohm; Package / Case:TO-220; Pin Configuration:a; Power Dissipation Pd:40W; Power Dissipation Pd:40W; Power Dissipation Ptot Max:40W; Pulse Current Idm:29.2A; Reverse Recovery Time trr Typ:70ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Part # Mfg. Description Stock Price
FQP7N10
DISTI # FQP7N10-ND		ON SemiconductorMOSFET N-CH 100V 7.3A TO-220
RoHS: Compliant
Min Qty: 2000
Container: Tube		Limited Supply - Call
    FQP7N10L
    DISTI # FQP7N10L-ND    		ON SemiconductorMOSFET N-CH 100V 7.3A TO-220
    RoHS: Compliant
    Min Qty: 2000
    Container: Tube    		Limited Supply - Call
      FQP7N10
      DISTI # 512-FQP7N10      		ON SemiconductorMOSFET 100V N-Channel QFET
      RoHS: Compliant      		0
        FQP7N10L
        DISTI # 512-FQP7N10L        		ON SemiconductorMOSFET 100V N-Ch QFET Logic Level
        RoHS: Compliant        		0
          FQP7N10Fairchild Semiconductor Corporation 1112
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            Availability
            Stock:
            Available
            On Order:
            4500
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