NCP510x High Voltage MOSFET and IGBT Gate Drivers

NCP510x High Voltage MOSFET and IGBT Gate Drivers

ON Semiconductor's NCP510x devices are high voltage gate driver ICs providing two outputs for direct drive of two N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration version B or any other high-side plus low-side configuration version A. A bootstrap technique is used to insure proper drive of the High-side power switch. The driver works with two independent inputs.

Features
  • High voltage range: up to 600 V
  • dv/dt immunity ± 50 V/nsec
  • Gate drive supply range from 10 V to 20 V
  • High and low drive outputs
  • Output source / sink current capability: 250 mA / 500 mA
  • 3.3 V and 5 V input logic compatible
  • Up to VCC swing on input pins
  • Matched propagation delays between both channels
  • Outputs in phase with the inputs
  • Independent logic inputs to accommodate all topologies (version A)
  • Cross conduction protection with 100 ns internal fixed dead time (version B )
  • Under VCC lockout (UVLO) for both channels
  • Pin-to-pin compatible with industry standards
Applications
  • Half-bridge power converters
  • Any complementary drive converters (asymmetrical half-bridge, active clamp) (A version only)
  • Full-bridge converters
  • Solid state motor drives
Manufacturer