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BSC047N08NS3 G

BSC047N08NS3 G
Mfr. #:
BSC047N08NS3 G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
BSC047N08NS3 G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
80 V
Id - Continuous Drain Current:
100 A
Rds On - Drain-Source Resistance:
3.9 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
69 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
125 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
60 S
Fall Time:
11 ns
Product Type:
MOSFET
Rise Time:
17 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
44 ns
Typical Turn-On Delay Time:
18 ns
Part # Aliases:
BSC047N08NS3GATMA1 BSC47N8NS3GXT SP000436372
Unit Weight:
0.006349 oz
Tags
BSC047N08NS3G, BSC047N08NS3, BSC047, BSC04, BSC0, BSC
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
BSC047N08NS3GATMA1
DISTI # BSC047N08NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 80V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.2348
BSC047N08NS3GATMA1
DISTI # BSC047N08NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 80V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.4186
  • 500:$1.7121
  • 100:$2.2013
  • 10:$2.7390
  • 1:$3.0300
BSC047N08NS3GATMA1
DISTI # BSC047N08NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 80V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.4186
  • 500:$1.7121
  • 100:$2.2013
  • 10:$2.7390
  • 1:$3.0300
BSC047N08NS3G
DISTI # BSC047N08NS3 G		Infineon Technologies AGTrans MOSFET N-CH 80V 18A 8-Pin TDSON EP (Alt: BSC047N08NS3 G)
RoHS: Compliant
Min Qty: 5000		Asia - 0
    BSC047N08NS3GATMA1
    DISTI # BSC047N08NS3GATMA1    		Infineon Technologies AGTrans MOSFET N-CH 80V 18A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC047N08NS3GATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$1.2439
    • 10000:$1.1989
    • 20000:$1.1549
    • 30000:$1.1169
    • 50000:$1.0969
    BSC047N08NS3GATMA1.
    DISTI # 31AC8216    		Infineon Technologies AGContinuous Drain Current Id:18A,Drain Source Voltage Vds:80V,Automotive Qualification Standard:-0
    • 1:$1.4900
    • 10000:$1.3900
    • 30000:$1.2900
    BSC047N08NS3 G
    DISTI # 60R2492    		Infineon Technologies AGMOSFET, N CHANNEL, 80V, 100A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0039ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes44
    • 1:$2.5500
    • 10:$2.1600
    • 100:$1.7300
    • 500:$1.5200
    • 1000:$1.2600
    • 2500:$1.1700
    • 5000:$1.1300
    BSC047N08NS3GInfineon Technologies AGPower Field-Effect Transistor, 18A I(D), 80V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		21
    • 1000:$1.0400
    • 500:$1.0900
    • 100:$1.1400
    • 25:$1.1900
    • 1:$1.2800
    BSC047N08NS3 G
    DISTI # 726-BSC047N08NS3G    		Infineon Technologies AGMOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
    RoHS: Compliant    		0
    • 1:$2.5500
    • 10:$2.1600
    • 100:$1.7300
    • 500:$1.5200
    • 1000:$1.2600
    BSC047N08NS3GATMA1
    DISTI # 726-BSC047N08NS3GATM    		Infineon Technologies AGMOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
    RoHS: Compliant    		0
    • 1:$2.5500
    • 10:$2.1600
    • 100:$1.7300
    • 500:$1.5200
    • 1000:$1.2600
    BSC047N08NS3GATMA1
    DISTI # 9064347P    		Infineon Technologies AGMOSFET N-CHANNEL 80V 18A TDSON8 EP, RL10
    • 100:£1.1470
    • 500:£1.0090
    • 1000:£0.8320
    • 2500:£0.7940
    BSC047N08NS3GInfineon Technologies AG18 A, 80 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET120
    • 51:$1.1250
    • 14:$1.5000
    • 1:$2.2500
    BSC047N08NS3GXTInfineon Technologies AG18 A, 80 V, 0.0047 OHM, N-CHANNEL, SI, POWER, MOSFET176
    • 102:$1.3365
    • 39:$1.4850
    • 1:$2.9700
    BSC047N08NS3GInfineon Technologies AG 96
      BSC047N08NS3 G
      DISTI # 1775444      		Infineon Technologies AGMOSFET, N CH, 100A, 80V, PG-TDSON-8
      RoHS: Compliant      		44
      • 1:$3.9200
      BSC047N08NS3 G
      DISTI # 1775444      		Infineon Technologies AGMOSFET, N CH, 100A, 80V, PG-TDSON-8
      RoHS: Compliant      		44
      • 1:£2.7800
      • 10:£1.9600
      • 100:£1.4700
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      Availability
      Stock:
      11
      On Order:
      1994
      Enter Quantity:
      Current price of BSC047N08NS3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $2.54
      $2.54
      10
      $2.15
      $21.50
      100
      $1.72
      $172.00
      500
      $1.51
      $755.00
      1000
      $1.25
      $1 250.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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