BSC047N08NS3

BSC047N08NS3 G vs BSC047N08NS3 vs BSC047N08NS3G

 
PartNumberBSC047N08NS3 GBSC047N08NS3BSC047N08NS3G
DescriptionMOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP (Alt: BSC047N08NS3 G)
ManufacturerInfineonINFINEON
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance3.9 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge69 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation125 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min60 S--
Fall Time11 ns--
Product TypeMOSFET--
Rise Time17 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time44 ns--
Typical Turn On Delay Time18 ns--
Part # AliasesBSC047N08NS3GATMA1 BSC47N8NS3GXT SP000436372--
Unit Weight0.006349 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC047N08NS3 G MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
BSC047N08NS3GATMA1 MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
BSC047N08NS3GATMA1 MOSFET N-CH 80V 100A TDSON-8
BSC047N08NS3 New and Original
BSC047N08NS3 G MOSFET, N CHANNEL, 80V, 100A, PG-TSDSON, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.0039ohm, Rds(on) Test Voltage Vgs:1
BSC047N08NS3G Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP (Alt: BSC047N08NS3 G)
BSC047N08NS3GS New and Original
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