GN2470K4-G

Mfr. #:: GN2470K4-G
Manufacturer:: Microchip Technology
Description:: IGBT Transistors 700V 3.5A IGBT
Lifecycle:: New from this manufacturer.
Datasheet:: GN2470K4-G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: GN2470K4-G more Information GN2470K4-G Product Details

Product Attribute
Attribute Value

Manufacturer:: Microchip

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-252 (DPAK)-3

Mounting Style:: SMD/SMT

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 700 V

Maximum Gate Emitter Voltage:: 20 V

Pd - Power Dissipation:: 2.5 W

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Packaging:: Reel

Continuous Collector Current Ic Max:: 1 A

Height:: 2.39 mm

Length:: 6.73 mm

Width:: 6.1 mm

Brand:: Microchip Technology

Continuous Collector Current:: 1 A

Moisture Sensitive:: Yes

Product Type:: IGBT Transistors

Factory Pack Quantity:: 2000

Subcategory:: IGBTs

Tags: GN247, GN24, GN2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

GN2470K4-G Description

***ical: Trans IGBT Chip N=-CH 700V 1A 2500mW 3-Pin(2+Tab) DPAK

***(Formerly Allied Electronics): INSULATED GATE BIPOLAR TRANSISTOR, 700V, 3.5A3 DPAK T/R | Microchip Technology Inc. GN2470K4-G

***rochip: INSULATED GATE BIPOLAR TRANSISTOR 700V 3.5A

*** Electronic Components: IGBT Transistors 700V 3.5A IGBT

***enic: TO-252(DPAK)-3 Pre-ordered MCUs ROHS

***ical: Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) TO-252

***nell: TRANSISTOR, IGBT, 600V, 12A, TO-252; DC Collector Current: 12A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 88W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TRENCHSTOP™ Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: The 600 V, 6 A single TRENCHSTOP™ IGBT3 in a TO252 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO252-3, RoHS

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

***ical: Trans IGBT Chip N-CH 600V 10A 83000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: Trench gate field-stop IGBT, H series 600 V, 5 A high speed

***ure Electronics: H Series 600 V 10 A SMT Trench Gate Field-Stop IGBT - TO-252

***nell: IGBT, 600V, 10A, 175DEG C, 83W; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 83W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: H Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ow.cn: Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3-Pin(2+Tab) DPAK T/R

***ark: Igbt, Single, 600V, 12A, To-252; Dc Collector Current:12A; Collector Emitter Saturation Voltage Vce(On):2.2V; Power Dissipation Pd:100W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-252; No. Of Pins:3Pins; Rohs Compliant: Yes

***ineon: RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives. | Summary of Features: Optimized parameters for up to 20% lower switching losses; Operating range of DC to 30kHz; Max junction temperature 175C; Short circuit capability of 5s; Very tight parameter distribution; Best in class current versus package size performance; Smooth switching performance leading to low EMI levels | Benefits: Excellent cost/performance for hard switching applications; Outstanding temperature stability; Very good EMI behavior; Up to 60% space saving on the PCB; Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching | Target Applications: Washing machines; General purpose inverters; Aircon compressors; Hard switching topologies up to 1.0kW

***ical: Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R

***emi: IGBT, 600V, 3A, Short Circuit Rated

*** Stop Electro: Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252

***S: French Electronic Distributor since 1988

***rchild Semiconductor: Using advanced NPT IGBT Technology, Fairchild’s the NPT IGBTs offer the optimum performance for low power inverter-driven applications where low-losses and short circuit ruggedness feature are essential.

***ical: Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3-Pin(2+Tab) DPAK T/R

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 27pF 50volts C0G 5%

***or: DISCRETE IGBT WITHOUT ANTI-PARAL

***et: IGBT 600V 6A 30W DPAK

*** Electronic Components: IGBT Transistors Dis High Perf IGBT

***inecomponents.com: Discrete, High Performance IGBT

***rchild Semiconductor: Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

Market price

Part #	Mfg.	Description	Stock	Price
GN2470K4-G DISTI # 27693368	Microchip Technology Inc	Trans IGBT Chip N-CH 700V 1A 3-Pin(2+Tab) DPAK RoHS: Compliant	8674	100:$0.9723 61:$1.0245
GN2470K4-G DISTI # GN2470K4-G-ND	Microchip Technology Inc	IC IGBT 700V 3.5A 3DPAK RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	Temporarily Out of Stock	2000:$0.9064
GN2470K4-G DISTI # 70483961	Microchip Technology Inc	INSULATED GATE BIPOLAR TRANSISTOR,700V,3.5A3 DPAKT/R RoHS: Compliant	0	2000:$0.8600
GN2470K4-G DISTI # 689-GN2470K4-G	Microchip Technology Inc	IGBT Transistors 700V 3.5A IGBT RoHS: Compliant	0	2000:$0.9070
GN2470K4 DISTI # 689-GN2470K4	Microchip Technology Inc	IGBT Transistors 700V 3.5A IGBT RoHS: Not compliant	0
GN2470K4-G DISTI # GN2470K4G	Microchip Technology Inc		8935	1:$1.0300 25:$0.9800 100:$0.9300 500:$0.8800 1000:$0.6600 1500:$0.6200 2000:$0.6000

Image	Part #	Description
	Mfr.#: GN2470K4-G OMO.#: OMO-GN2470K4-G	IGBT Transistors 700V 3.5A IGBT
	Mfr.#: GN2470-K4-G OMO.#: OMO-GN2470-K4-G-1190	New and Original
	Mfr.#: GN2470K4 OMO.#: OMO-GN2470K4-1190	IGBT Transistors 700V 3.5A IGBT
	Mfr.#: GN2470K4-G OMO.#: OMO-GN2470K4-G-MICROCHIP-TECHNOLOGY	IGBT Transistors 700V 3.5A IGBT

GN2470K4-G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes