PMGD175XNEX

Product Attribute

Attribute Value

Manufacturer:

Nexperia

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TSSOP-6

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

950 mA

Rds On - Drain-Source Resistance:

252 mOhms

Vgs th - Gate-Source Threshold Voltage:

750 mV

Vgs - Gate-Source Voltage:

4.5 V

Qg - Gate Charge:

1.05 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

390 mW

Configuration:

Dual

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

2 N-Channel

Brand:

Nexperia

Forward Transconductance - Min:

3.5 S

Fall Time:

6 ns

Product Type:

MOSFET

Rise Time:

14 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

17 ns

Typical Turn-On Delay Time:

7 ns

Unit Weight:

0.000265 oz

Tags

PMGD175XNE, PMGD17, PMGD1, PMGD, PMG