GA05JT03-46
GA05JT03-46
Mfr. #:
GA05JT03-46
Manufacturer:
GeneSiC Semiconductor
Description:
MOSFET SiC High Temperature JT
Lifecycle:
New from this manufacturer.
Datasheet:
GA05JT03-46 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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More Information:
GA05JT03-46 more Information
Specifications
Product Attribute
Attribute Value
RoHS:
Y
Mounting Style:
Through Hole
Package / Case:
TO-46-3
Configuration:
Single
Technology:
SiC
Transistor Polarity:
N-Channel
Subcategory:
MOSFETs
Product Type:
MOSFET
Product Category:
MOSFET
Manufacturer:
GeneSiC Semiconductor
Brand:
GeneSiC Semiconductor
Channel Mode:
Enhancement
Packaging:
Bulk
Id - Continuous Drain Current:
9 A
Rds On - Drain-Source Resistance:
620 mOhms
Rise Time:
6.6 ns
Factory Pack Quantity:
50
Vds - Drain-Source Breakdown Voltage:
300 V
Vgs - Gate-Source Voltage:
30 V
Pd - Power Dissipation:
20 W
Qg - Gate Charge:
14.6 nC
Typical Turn-On Delay Time:
13 ns
Fall Time:
12.4 ns
Typical Turn-Off Delay Time:
12 ns
Number of Channels:
1 Channel
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 225 C
Tags
GA05JT0, GA05JT, GA05, GA0
GA05JT03-46 Comment
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More Information
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