BSC014N04LSIATMA1

Mfr. #:: BSC014N04LSIATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
Lifecycle:: New from this manufacturer.
Datasheet:: BSC014N04LSIATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: BSC014N04LSIATMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TDSON-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 40 V

Id - Continuous Drain Current:: 100 A

Rds On - Drain-Source Resistance:: 1.2 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 77 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 96 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 1.27 mm

Length:: 5.9 mm

Series:: OptiMOS 5

Transistor Type:: 1 N-Channel

Width:: 5.15 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 110 S

Fall Time:: 11 ns

Product Type:: MOSFET

Rise Time:: 50 ns

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 55 ns

Typical Turn-On Delay Time:: 16 ns

Part # Aliases:: BSC014N04LSI SP000953212

Unit Weight:: 0.004180 oz

Tags: BSC014N04, BSC014N0, BSC014, BSC01, BSC0, BSC

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

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BSC014N04LSIATMA1 Description

***et Europe: Trans MOSFET N-CH 40V 100A 8-Pin TDSON FL T/R

***ical: Power-MOSFET, 40V

***ineon: New 40V and 60V product families, feature not only the industrys lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. | Summary of Features: Optimized for synchronous rectification; 15% lower R DS(on) than alternative devices; 31% improvement of FOM over similar devices; Integrated Schottky-like diode; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control; Or-ing switches

BSC014N04LSIATMA1 More Information

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

40V OptiMOS Power MOSFETs: Infineon's 40V OptiMOS Power MOSFETs feature 35% lower RDS(on) and 45% lower Figure of Merit (RDS(on) x Qg) compared to alternative devices. These devices are optimized for synchronous rectification in switched mode power supplies (SMPS) as well as a broad range of industrial applications such as motor control, solar micro inverters and fast switching DC/DC converters. In addition, this new generation of 40V devices offers higher switching frequencies and are enabled which results in even higher power density. A monolithic integrated Schottky-like diode in the 40V SuperSO8 package (5mm x 6mm) leads to higher efficiency and a drastic reduction of the voltage overshoot. This in turn reduces the need for a snubber circuit and saves engineering effort and cost.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
BSC014N04LSIATMA1 DISTI # BSC014N04LSIATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 40V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	20577In Stock	1000:$1.6722 500:$1.9813 100:$2.4966 10:$3.0630 1:$3.3700
BSC014N04LSIATMA1 DISTI # BSC014N04LSIATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 40V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	20577In Stock	1000:$1.6722 500:$1.9813 100:$2.4966 10:$3.0630 1:$3.3700
BSC014N04LSIATMA1 DISTI # BSC014N04LSIATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 40V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	20000In Stock	5000:$1.4734
BSC014N04LSIATMA1 DISTI # BSC014N04LSIATMA1	Infineon Technologies AG	Trans MOSFET N-CH 40V 100A 8-Pin TDSON FL T/R - Tape and Reel (Alt: BSC014N04LSIATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$1.2900 10000:$1.1900 20000:$1.1900 30000:$1.0900 50000:$1.0900
BSC014N04LSIATMA1 DISTI # SP000953212	Infineon Technologies AG	Trans MOSFET N-CH 40V 100A 8-Pin TDSON FL T/R (Alt: SP000953212) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	5000:€1.9139 10000:€1.4899 20000:€1.2389 30000:€1.1559 50000:€1.0989
BSC014N04LSIATMA1 DISTI # 50Y1798	Infineon Technologies AG	MOSFET, N-CH, 40V, 100A, 150DEG C, 96W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0012ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes	0	1000:$1.7500 500:$2.0900 250:$2.2100 100:$2.3400 50:$2.5200 25:$2.7000 10:$2.8900 1:$3.3600
BSC014N04LSI DISTI # 726-BSC014N04LSI	Infineon Technologies AG	MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS RoHS: Compliant	18687	1:$2.6800 10:$2.2800 100:$1.8200 500:$1.6000 1000:$1.3200
BSC014N04LSIATMA1 DISTI # 726-BSC014N04LSIATMA	Infineon Technologies AG	MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS RoHS: Compliant	110	1:$2.6800 10:$2.2800 100:$1.8200 500:$1.6000 1000:$1.3200
BSC014N04LSIATMA1 DISTI # 2480707	Infineon Technologies AG	MOSFET, N-CH, 40V, 100A, TDSON-8 RoHS: Compliant	0	500:£1.2400 250:£1.3300 100:£1.4200 10:£1.7700 1:£2.3600
BSC014N04LSIATMA1 DISTI # 2480707	Infineon Technologies AG	MOSFET, N-CH, 40V, 100A, TDSON-8 RoHS: Compliant	0	1000:$2.0900 5000:$2.0900 500:$2.5400 100:$2.8800 10:$3.6200 1:$4.2500
BSC014N04LSIATMA1 DISTI # 2480707RL	Infineon Technologies AG	MOSFET, N-CH, 40V, 100A, TDSON-8 RoHS: Compliant	0	1000:$2.0900 5000:$2.0900 500:$2.5400 100:$2.8800 10:$3.6200 1:$4.2500

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Availability

Stock:: Available
On Order:: 1992
Enter Quantity:

Current price of BSC014N04LSIATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$2.67~~; ~~$2.67~~

10: ~~$2.27~~; ~~$22.70~~

100: ~~$1.81~~; ~~$181.00~~

500: ~~$1.59~~; ~~$795.00~~

1000: ~~$1.31~~; ~~$1 310.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes