PartNumber | BSC010N04LS6ATMA1 | BSC010N04LSATMA1 | BSC010N04LS |
Description | MOSFET | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS |
Manufacturer | Infineon | Infineon | Texas Instruments |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | Through Hole |
Package / Case | TDSON-8 | TDSON-8 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
Id Continuous Drain Current | 100 A | 100 A | 212 A |
Rds On Drain Source Resistance | 1 mOhms | 1 mOhms | 2.9 mOhms |
Vgs th Gate Source Threshold Voltage | 1.3 V | 1.2 V | 1.5 V |
Vgs Gate Source Voltage | 20 V | 20 V | 10 V |
Qg Gate Charge | 67 nC | 133 nC | 52 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
Pd Power Dissipation | 150 W | 139 W | 259 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Tube |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Infineon Technologies | Infineon Technologies | Texas Instruments |
Forward Transconductance Min | 250 S | 140 S | 138 S |
Fall Time | 8 ns | 9 ns | 9.3 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 5 ns | 12 ns | 7.3 ns |
Factory Pack Quantity | 5000 | 5000 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 29 ns | 46 ns | 33 ns |
Typical Turn On Delay Time | 7 ns | 10 ns | 11 ns |
Tradename | - | OptiMOS | NexFET |
Height | - | 1.27 mm | 16.51 mm |
Length | - | 5.9 mm | 10.67 mm |
Series | - | OptiMOS 5 | CSD18502KCS |
Width | - | 5.15 mm | 4.7 mm |
Part # Aliases | - | BSC010N04LS SP000928282 | - |
Unit Weight | - | 0.003527 oz | 0.211644 oz |