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BSC011N03LSATMA1

BSC011N03LSATMA1
Mfr. #:
BSC011N03LSATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
Lifecycle:
New from this manufacturer.
Datasheet:
BSC011N03LSATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
100 A
Rds On - Drain-Source Resistance:
900 uOhms
Vgs th - Gate-Source Threshold Voltage:
1.2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
96 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
96 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
85 S
Fall Time:
6.2 ns
Product Type:
MOSFET
Rise Time:
8.8 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
37 ns
Typical Turn-On Delay Time:
6.7 ns
Part # Aliases:
BSC011N03LS BSC11N3LSXT SP000799082
Unit Weight:
0.010582 oz
Tags
BSC011N03LS, BSC011N, BSC011, BSC01, BSC0, BSC
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 1.1 mOhm 72 nC OptiMOS™ Power Mosfet - TDSON-8
***nell
MOSFET, N CH, 30V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 900µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 96W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Part # Mfg. Description Stock Price
BSC011N03LSATMA1
DISTI # V72:2272_06383624		Infineon Technologies AGTrans MOSFET N-CH 30V 37A 8-Pin TDSON EP T/R
RoHS: Compliant		4613
  • 3000:$0.7435
  • 1000:$0.8261
  • 500:$1.0550
  • 250:$1.2100
  • 100:$1.2156
  • 25:$1.4215
  • 10:$1.5794
  • 1:$2.0196
BSC011N03LSATMA1
DISTI # BSC011N03LSATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 100A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8889In Stock
  • 1000:$0.7706
  • 500:$0.9761
  • 100:$1.1815
  • 10:$1.5150
  • 1:$1.7000
BSC011N03LSATMA1
DISTI # BSC011N03LSATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 100A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8889In Stock
  • 1000:$0.7706
  • 500:$0.9761
  • 100:$1.1815
  • 10:$1.5150
  • 1:$1.7000
BSC011N03LSATMA1
DISTI # BSC011N03LSATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 100A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		5000In Stock
  • 10000:$0.6384
  • 5000:$0.6633
BSC011N03LSATMA1
DISTI # 33693669		Infineon Technologies AGTrans MOSFET N-CH 30V 37A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.5209
BSC011N03LSATMA1
DISTI # 32914028		Infineon Technologies AGTrans MOSFET N-CH 30V 37A 8-Pin TDSON EP T/R
RoHS: Compliant		4613
  • 12:$2.0196
BSC011N03LSATMA1
DISTI # BSC011N03LSATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 37A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC011N03LSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 5000
  • 50000:$0.4829
  • 30000:$0.4916
  • 20000:$0.5087
  • 10000:$0.5278
  • 5000:$0.5475
BSC011N03LSATMA1
DISTI # SP000799082		Infineon Technologies AGTrans MOSFET N-CH 30V 37A 8-Pin TDSON T/R (Alt: SP000799082)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 50
  • 50000:€0.4949
  • 30000:€0.5329
  • 20000:€0.5779
  • 10000:€0.6299
  • 5000:€0.7699
BSC011N03LSATMA1
DISTI # 47Y7992		Infineon Technologies AGMOSFET Transistor, N Channel, 100 A, 30 V, 0.0009 ohm, 10 V, 2 V RoHS Compliant: Yes7960
  • 1000:$0.7200
  • 500:$0.9120
  • 250:$0.9710
  • 100:$1.0300
  • 50:$1.1300
  • 25:$1.2400
  • 10:$1.3400
  • 1:$1.5700
BSC011N03LSATMA1.
DISTI # 23AC2918		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):900µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:96W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 50000:$0.4830
  • 30000:$0.4920
  • 20000:$0.5090
  • 10000:$0.5280
  • 1:$0.5480
BSC011N03LS
DISTI # 726-BSC011N03LS		Infineon Technologies AGMOSFET N-Ch 30V 100A TDSON-8 OptiMOS
RoHS: Compliant		26863
  • 1:$1.5500
  • 10:$1.3300
  • 100:$1.0200
  • 500:$0.9030
  • 1000:$0.7130
BSC011N03LSATMA1
DISTI # 726-BSC011N03LSATMA1		Infineon Technologies AGMOSFET N-Ch 30V 100A TDSON-8 OptiMOS
RoHS: Compliant		9362
  • 1:$1.5500
  • 10:$1.3300
  • 100:$1.0200
  • 500:$0.9030
  • 1000:$0.7130
  • 5000:$0.6320
  • 10000:$0.6090
BSC011N03LSATMA1
DISTI # 9064280P		Infineon Technologies AGMOSFET N-CHANNEL 30V 37A OPTIMOS TDSON8, RL4770
  • 1250:£0.5110
  • 500:£0.6470
  • 250:£0.7390
  • 50:£0.8460
BSC011N03LSATMA1
DISTI # 2443418		Infineon Technologies AGMOSFET, N CH, 30V, 100A, TDSON-812975
  • 500:£0.6960
  • 250:£0.7410
  • 100:£0.7860
  • 10:£1.0700
  • 1:£1.3500
BSC011N03LSATMA1
DISTI # 2443418		Infineon Technologies AGMOSFET, N CH, 30V, 100A, TDSON-8
RoHS: Compliant		12960
  • 5000:$1.0800
  • 1000:$1.1000
  • 500:$1.3900
  • 100:$1.5800
  • 10:$2.0400
  • 1:$2.3900
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Availability
Stock:
Available
On Order:
1992
Enter Quantity:
Current price of BSC011N03LSATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.55
$1.55
10
$1.33
$13.30
100
$1.02
$102.00
500
$0.90
$451.50
1000
$0.71
$713.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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