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BSC010NE2LSIATMA1

BSC010NE2LSIATMA1
Mfr. #:
BSC010NE2LSIATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
Lifecycle:
New from this manufacturer.
Datasheet:
BSC010NE2LSIATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
25 V
Id - Continuous Drain Current:
100 A
Rds On - Drain-Source Resistance:
900 uOhms
Vgs th - Gate-Source Threshold Voltage:
1.2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
78 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
96 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
80 S
Fall Time:
4.6 ns
Product Type:
MOSFET
Rise Time:
6.2 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
32 ns
Typical Turn-On Delay Time:
6.3 ns
Part # Aliases:
BSC010NE2LSI BSC1NE2LSIXT SP000854376
Unit Weight:
0.004187 oz
Tags
BSC010NE, BSC010, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 25 V 1.05 mOhm 59 nC OptiMOS™ Power Mosfet - TDSON-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:100A; On Resistance Rds(On):900Μohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: Yes
***ineon
With the new OptiMOS 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. | Benefits: Save overall system costs by reducing the number of phases in multiphase converters; Reduce power losses and increase efficiency for all load conditions; Save space with smallest packages like CanPAK, S3O8 or system in package solution; Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in | Target Applications: Onboard charger; Mainboard; Notebook; DC-DC; VRD/VRM; LED; Motor control
Part # Mfg. Description Stock Price
BSC010NE2LSIATMA1
DISTI # BSC010NE2LSIATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 25V 38A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		27951In Stock
  • 1000:$0.9241
  • 500:$1.1153
  • 100:$1.4340
  • 10:$1.7840
  • 1:$1.9800
BSC010NE2LSIATMA1
DISTI # BSC010NE2LSIATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 25V 38A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		27951In Stock
  • 1000:$0.9241
  • 500:$1.1153
  • 100:$1.4340
  • 10:$1.7840
  • 1:$1.9800
BSC010NE2LSIATMA1
DISTI # BSC010NE2LSIATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 25V 38A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		25000In Stock
  • 5000:$0.8044
BSC010NE2LSIATMA1
DISTI # BSC010NE2LSIATMA1		Infineon Technologies AGTrans MOSFET P-CH 25V 38A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC010NE2LSIATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.7099
  • 10000:$0.6879
  • 20000:$0.6859
  • 30000:$0.6839
  • 50000:$0.6819
BSC010NE2LSIATMA1
DISTI # SP000854376		Infineon Technologies AGTrans MOSFET P-CH 25V 38A 8-Pin TDSON T/R (Alt: SP000854376)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€0.8609
  • 10000:€0.7039
  • 20000:€0.6459
  • 30000:€0.5959
  • 50000:€0.5529
BSC010NE2LSIATMA1
DISTI # 47Y7991		Infineon Technologies AGMOSFET, N-CH, 25V, 100A, 150DEG C, 96W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):900µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes5000
  • 1000:$0.8160
  • 500:$0.9850
  • 250:$1.0500
  • 100:$1.1200
  • 50:$1.2100
  • 25:$1.3100
  • 10:$1.4000
  • 1:$1.6500
BSC010NE2LSIATMA1.
DISTI # 25AC6430		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):900µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:96W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 50000:$0.5950
  • 30000:$0.5970
  • 20000:$0.5980
  • 10000:$0.6000
  • 1:$0.6010
BSC010NE2LSIATMA1
DISTI # 726-BSC010NE2LSIATMA		Infineon Technologies AGMOSFET N-Ch 25V 100A TDSON-8 OptiMOS
RoHS: Compliant		11110
  • 1:$1.6500
  • 10:$1.4000
  • 100:$1.1200
  • 500:$0.9850
  • 1000:$0.8160
  • 2500:$0.7600
  • 5000:$0.7320
  • 10000:$0.7040
BSC010NE2LSI
DISTI # 726-BSC010NE2LSI		Infineon Technologies AGMOSFET N-Ch 25V 100A TDSON-8 OptiMOS
RoHS: Compliant		3760
  • 1:$1.6500
  • 10:$1.4000
  • 100:$1.1200
  • 500:$0.9850
  • 1000:$0.8160
BSC010NE2LSIATMA1
DISTI # 9064277P		Infineon Technologies AGMOSFET N-CHANNEL 25V TDSON8, RL20
  • 1250:£0.5840
  • 500:£0.7050
  • 250:£0.8090
  • 50:£0.9090
BSC010NE2LSIATMA1
DISTI # 2443417		Infineon Technologies AGMOSFET, N CH, 25V, 100A, TDSON-8
RoHS: Compliant		5496
  • 500:£0.7260
  • 250:£0.8330
  • 100:£0.8720
  • 25:£0.9360
  • 5:£1.1100
BSC010NE2LSIATMA1
DISTI # 2443417		Infineon Technologies AGMOSFET, N CH, 25V, 100A, TDSON-8
RoHS: Compliant		5356
  • 5000:$1.2100
  • 1000:$1.2300
  • 500:$1.4800
  • 100:$1.6900
  • 10:$2.1100
  • 1:$2.4900
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Availability
Stock:
Available
On Order:
1989
Enter Quantity:
Current price of BSC010NE2LSIATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.57
$1.57
10
$1.33
$13.30
100
$1.06
$106.00
500
$0.94
$467.50
1000
$0.77
$774.00
2500
$0.72
$1 802.50
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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