SCT3120ALGC11

Mfr. #:: SCT3120ALGC11
Manufacturer:: Rohm Semiconductor
Description:: MOSFET N-Ch 650V SiC 21A 120mOhm TrenchMOS
Lifecycle:: New from this manufacturer.
Datasheet:: SCT3120ALGC11 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: SCT3120ALGC11 more Information

Product Attribute
Attribute Value

Manufacturer:: ROHM Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: SiC

Mounting Style:: Through Hole

Package / Case:: TO-247N-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 650 V

Id - Continuous Drain Current:: 21 A

Rds On - Drain-Source Resistance:: 120 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.7 V

Vgs - Gate-Source Voltage:: - 4 V, 22 V

Qg - Gate Charge:: 38 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 103 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Tube

Series:: SCT3x

Transistor Type:: 1 N-Channel

Brand:: ROHM Semiconductor

Forward Transconductance - Min:: 2.7 S

Fall Time:: 14 ns

Product Type:: MOSFET

Rise Time:: 21 ns

Factory Pack Quantity:: 450

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 23 ns

Typical Turn-On Delay Time:: 14 ns

Part # Aliases:: SCT3120AL

Unit Weight:: 0.211644 oz

Tags: SCT31, SCT3, SCT

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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SCT3120ALGC11 Description

***ure Electronics: SCT3120AL Series 650 V 21 A 156 mOhm N-Channel SiC Power Mosfet - TO-247N

***ical: Trans MOSFET N-CH SiC 650V 21A 3-Pin(3+Tab) TO-247N Tube

***et: N-CHANNEL SILICON CARBIDE POWER MOSFET 650V/21A

SCT3120ALGC11 More Information

Silicon Carbide (SiC) Power Devices: ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.

SCT3x 3rd Generation SiC Trench MOSFETs: ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.

N-Channel SiC Power MOSFETs: ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.

Industrial Product Solutions: ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.

Market price

Part #	Mfg.	Description	Stock	Price
SCT3120ALGC11 DISTI # V99:2348_18341079	ROHM Semiconductor	SCT3120ALGC11	224	250:$5.2180 100:$5.4130 25:$6.2000 10:$6.4710 1:$7.9475
SCT3120ALGC11 DISTI # SCT3120ALGC11-ND	ROHM Semiconductor	MOSFET NCH 650V 21A TO247N RoHS: Compliant Min Qty: 1 Container: Tube	3317In Stock	510:$4.7275 120:$5.4290 30:$6.2527 10:$6.5580 1:$7.2600
SCT3120ALGC11 DISTI # 26098907	ROHM Semiconductor	SCT3120ALGC11	224	2:$7.9475
SCT3120ALGC11 DISTI # SCT3120ALGC11	ROHM Semiconductor	N-CHANNEL SILICON CARBIDE POWER MOSFET 650V/21A - Rail/Tube (Alt: SCT3120ALGC11) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 5800	4500:$3.8900 2250:$3.9900 1350:$4.1900 900:$4.4900 450:$4.7900
SCT3120ALGC11 DISTI # SCT3120ALGC11	ROHM Semiconductor	N-CHANNEL SILICON CARBIDE POWER MOSFET 650V/21A (Alt: SCT3120ALGC11) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€5.4900 500:€5.8900 100:€6.0900 50:€6.2900 25:€6.5900 10:€6.7900 1:€7.4900
SCT3120ALGC11 DISTI # 05AC9466	ROHM Semiconductor	MOSFET, N-CH, 650V, 21A, TO-247N,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.12ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V,Power RoHS Compliant: Yes	35	500:$6.4000 250:$6.6200 100:$7.8800 50:$8.4400 25:$9.0600 10:$9.9600 1:$11.0600
SCT3120ALGC11. DISTI # 32AC3229	ROHM Semiconductor	Operating Temperature Max:175°C,Product Range:-,Automotive Qualification Standard:-,MSL:- RoHS Compliant: Yes	4900	500:$6.4000 250:$6.6200 100:$7.8800 50:$8.4400 25:$9.0600 10:$9.9600 1:$11.0600
SCT3120ALGC11 DISTI # 755-SCT3120ALGC11	ROHM Semiconductor	MOSFET N-Ch 650V SiC 21A 120mOhm TrenchMOS RoHS: Compliant	3138	1:$7.2500 10:$6.5500 25:$6.2500 100:$5.4200 250:$5.1800
SCT3120ALGC11 DISTI # 1501488	ROHM Semiconductor	MOSFET N-CHANNEL 21A 650V SIC TO-247, EA	15	50:£4.6200 12:£4.7100 6:£4.8900 3:£5.0300 1:£5.2400
SCT3120ALGC11	ROHM Semiconductor		239	229:$8.0320 109:$8.7850 1:$11.2950
SCT3120ALGC11 DISTI # SCT3120ALGC11	ROHM Semiconductor	SiC-N-Ch 650V 21A 103W 0,156R TO247 RoHS: Compliant	445	1:€8.4500 5:€7.2500 10:€6.6500 30:€6.4300
SCT3120ALGC11 DISTI # TMOS1325	ROHM Semiconductor	SiC-N 650V 120mOhm 21A TO247 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	450:$7.1300
SCT3120ALGC11	ROHM Semiconductor	RoHS(ship within 1day)	299	1:$7.2300 10:$6.1400 50:$5.4200 100:$5.2000 500:$5.1300 1000:$5.0200
SCT3120ALGC11	ROHM Semiconductor	MOSFET N-Ch 650V SiC 21A 120mOhm TrenchMOS RoHS: Compliant	Americas - 390
SCT3120ALGC11 DISTI # 2678787	ROHM Semiconductor	MOSFET, N-CH, 650V, 21A, TO-247N RoHS: Compliant	35	500:$11.3800 250:$11.9600 100:$12.6100 25:$13.3400 10:$15.0800 1:$16.1300
SCT3120ALGC11 DISTI # 2678787	ROHM Semiconductor	MOSFET, N-CH, 650V, 21A, TO-247N	116	100:£5.2200 50:£5.4400 10:£5.6500 5:£5.8700 1:£6.4300

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Availability

Stock:: Available
On Order:: 1986
Enter Quantity:

Current price of SCT3120ALGC11 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$7.25~~; ~~$7.25~~

10: ~~$6.55~~; ~~$65.50~~

25: ~~$6.25~~; ~~$156.25~~

100: ~~$5.42~~; ~~$542.00~~

250: ~~$5.18~~; ~~$1 295.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes