SCT3105KLGC11 vs SCT3105KLHRC11 vs SCT3120ALGC11

 
PartNumberSCT3105KLGC11SCT3105KLHRC11SCT3120ALGC11
DescriptionMOSFET Nch 1200V 24A SiC TO-247NMOSFET 1200V 24A 134W SIC 105mOhm TO-247NMOSFET N-Ch 650V SiC 21A 120mOhm TrenchMOS
ManufacturerROHM SemiconductorROHM SemiconductorROHM Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiCSiCSiC
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247N-3TO-247N-3TO-247N-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage1200 V1200 V650 V
Id Continuous Drain Current24 A24 A21 A
Rds On Drain Source Resistance137 mOhms105 mOhms120 mOhms
Vgs th Gate Source Threshold Voltage2.7 V2.7 V2.7 V
Vgs Gate Source Voltage4 V to 22 V- 4 V, 22 V- 4 V, 22 V
Qg Gate Charge51 nC51 nC38 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingTubeTubeTube
SeriesSCT3xSCT3xSCT3x
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandROHM SemiconductorROHM SemiconductorROHM Semiconductor
Forward Transconductance Min3.4 S3.4 S2.7 S
Fall Time17 ns17 ns14 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time27 ns27 ns21 ns
Factory Pack Quantity3030450
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time31 ns31 ns23 ns
Typical Turn On Delay Time17 ns17 ns14 ns
Pd Power Dissipation-134 W103 W
Part # Aliases--SCT3120AL
Unit Weight--0.211644 oz
Top