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SCT3105KLGC11

SCT3105KLGC11
Mfr. #:
SCT3105KLGC11
Manufacturer:
Rohm Semiconductor
Description:
MOSFET Nch 1200V 24A SiC TO-247N
Lifecycle:
New from this manufacturer.
Datasheet:
SCT3105KLGC11 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SCT3105KLGC11 more Information
Product Attribute
Attribute Value
Manufacturer:
ROHM Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
SiC
Mounting Style:
Through Hole
Package / Case:
TO-247N-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
1200 V
Id - Continuous Drain Current:
24 A
Rds On - Drain-Source Resistance:
137 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.7 V
Vgs - Gate-Source Voltage:
4 V to 22 V
Qg - Gate Charge:
51 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Series:
SCT3x
Transistor Type:
1 N-Channel
Brand:
ROHM Semiconductor
Forward Transconductance - Min:
3.4 S
Fall Time:
17 ns
Product Type:
MOSFET
Rise Time:
27 ns
Factory Pack Quantity:
30
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
31 ns
Typical Turn-On Delay Time:
17 ns
Tags
SCT31, SCT3, SCT
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SCT3x 3rd Generation SiC Trench MOSFETs
ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
Part # Mfg. Description Stock Price
SCT3105KLGC11
DISTI # SCT3105KLGC11-ND		ROHM SemiconductorSCT3105KL IS AN SIC (SILICON CAR
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 450:$12.5240
  • 25:$14.9480
  • 10:$15.5940
  • 1:$16.9700
SCT3105KL
DISTI # SCT3105KLGC11		ROHM Semiconductor- Rail/Tube (Alt: SCT3105KLGC11)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$10.2900
  • 2250:$10.5900
  • 1350:$11.1900
  • 900:$11.8900
  • 450:$12.6900
SCT3105KLGC11
DISTI # 81AC5496		ROHM SemiconductorMOSFET, N-CH, 1.2KV, 24A, 175DEG C, 134W,Transistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.105ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V,PowerRoHS Compliant: Yes0
  • 500:$11.8300
  • 250:$12.6500
  • 100:$13.3000
  • 50:$14.2000
  • 25:$15.1000
  • 10:$15.7500
  • 1:$17.1300
SCT3105KLGC11
DISTI # 755-SCT3105KLGC11		ROHM SemiconductorMOSFET Nch 1200V 24A SiC TO-247N
RoHS: Compliant		450
  • 1:$16.9600
  • 10:$15.5900
  • 25:$14.9500
  • 100:$13.1700
  • 250:$12.5200
  • 500:$11.7100
SCT3105KLGC11
DISTI # 2947070		ROHM SemiconductorMOSFET, N-CH, 1.2KV, 24A, 175DEG C, 134W
RoHS: Compliant		0
  • 10:$17.0800
  • 5:$17.5300
  • 1:$19.0500
SCT3105KLGC11ROHM SemiconductorMOSFET Nch 1200V 24A SiC TO-247N
RoHS: Compliant		Americas -
    SCT3105KLGC11
    DISTI # 2947070    		ROHM SemiconductorMOSFET, N-CH, 1.2KV, 24A, 175DEG C, 134W0
    • 100:£9.5500
    • 50:£10.2000
    • 10:£10.8400
    • 5:£12.2900
    • 1:£12.5500
    Image Part # Description
    SCT3105KLGC11

    Mfr.#: SCT3105KLGC11

    OMO.#: OMO-SCT3105KLGC11

    		 MOSFET Nch 1200V 24A SiC TO-247N
    SCT3105KLHRC11

    Mfr.#: SCT3105KLHRC11

    OMO.#: OMO-SCT3105KLHRC11

    		 MOSFET 1200V 24A 134W SIC 105mOhm TO-247N
    SCT3105KLGC11

    Mfr.#: SCT3105KLGC11

    OMO.#: OMO-SCT3105KLGC11-ROHM-SEMI

    		 SCT3105KL IS AN SIC (SILICON CAR
    SCT3105KLHRC11

    Mfr.#: SCT3105KLHRC11

    OMO.#: OMO-SCT3105KLHRC11-ROHM-SEMI

    		 AUTOMOTIVE GRADE N-CHANNEL SIC P
    Availability
    Stock:
    888
    On Order:
    2871
    Enter Quantity:
    Current price of SCT3105KLGC11 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $16.96
    $16.96
    10
    $15.59
    $155.90
    25
    $14.95
    $373.75
    100
    $13.17
    $1 317.00
    250
    $12.52
    $3 130.00
    500
    $11.71
    $5 855.00
    1000
    $10.74
    $10 740.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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